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N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. FEATURES •Lowon-stateresistance •Fastswitching •Lowprofilesurfacemountpackage Applications:- •Motorandrelaydrivers •d.c.tod.c.converters

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

N-Channel100V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •ExtremelyLowQgdforSwitchingLosses •100RgTested •100AvalancheTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-channelTrenchMOSlogiclevelFET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplications. 1.2Featuresandbenefits Lowcond

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHT4NQ10LTinSOT223. Features ■TrenchMOS™technology ■Fastswitching ■Lowon-stateresistance ■Surfacemountpackage ■Logiclevelcompatible.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

N-Channel100-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFETs •175°CMaximumJunctionTemperature •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
更新时间:2024-6-5 21:36:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NXP/恩智浦
20+
SOT-223
43000
原装优势主营型号-可开原型号增税票
NXP
SOT-223
168
NXP
2023+
SOT223
50000
原装现货
PH
23+
SOT223
21000
全新原装
NEXPERIA/安世
23+
SOT-89
53200
只做原装公司现货免费送样可含税-可BOM配单
NXP(恩智浦)
23+
NA
6000
原厂原装现货订货价格优势终端BOM表可配单提供样品
NXP/恩智浦
21+
SOT223
1709
PHI
23+
SOT223
12300
NXP
18+
QR
9800
一级代理/全新原装现货/长期供应!
NXP
23+
SOT223
30000
代理全新原装现货,价格优势

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