2SK97价格

参考价格:¥0.8450

型号:2SK973 品牌:HITACHI 备注:这里有2SK97多少钱,2024年最近7天走势,今日出价,今日竞价,2SK97批发/采购报价,2SK97行情走势销售排行榜,2SK97报价。
型号 功能描述 生产厂家&企业 LOGO 操作

SiliconN-ChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice –Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=65mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconN-ChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice –Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconN-ChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice –Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconN-ChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice –Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=2.0A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=350mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=2.0A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=350mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconN-ChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice –Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconN-ChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice –Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconN-ChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice –Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconN-ChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice –Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconN-ChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconNChannelMOSFET

Features 1.Lowon-resistance 2.Highspeedswitching 3.Lowdrivecurrent 4.4Vgatedrivedevice -Canbedrivenfrom5Vsource 5.Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNChannelMOSFET

Features 1.Lowon-resistance 2.Highspeedswitching 3.Lowdrivecurrent 4.4Vgatedrivedevice -Canbedrivenfrom5Vsource 5.Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

N-Channel60V(D-S)MOSFET

文件:960.08 Kbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

iscN-ChannelMOSFETTransistor

文件:266.62 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel60V(D-S)MOSFET

文件:1.00193 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

iscN-ChannelMOSFETTransistor

文件:261.16 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNChannelMOSFET

文件:116.13 Kbytes Page:7 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK979

文件:93.35 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
更新时间:2024-6-1 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI
23+
NA/
2900
优势代理渠道,原装正品,可全系列订货开增值税票
HIT
2020+
DPAK
16800
绝对原装进口现货,假一赔十,价格优势!?
RENESAS/瑞萨
22+
SOT252
100000
代理渠道/只做原装/可含税
HITACHI
23+
TO252
90000
只做原厂渠道价格优势可提供技术支持
HITACHI
24+
TO252
880000
明嘉莱只做原装正品现货
HITACHI
2022
TO-252
80000
原装现货,OEM渠道,欢迎咨询
HITACHI
22+23+
TO252
9600
绝对原装正品全新进口深圳现货
日立
1822+
TO-252
9852
只做原装正品假一赔十为客户做到零风险!!
HITACHI
TO-252
265209
假一罚十原包原标签常备现货!
RENESAS-瑞萨
24+25+/26+27+
TO-252-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库

2SK97芯片相关品牌

  • ADAM-TECH
  • ECS
  • EDAC
  • grayhill
  • Intel
  • KODENSHI
  • MEDER
  • MPD
  • OSCILENT
  • RENCO
  • SEI
  • TAI-SAW

2SK97数据表相关新闻

  • 2SMPP-02

    优势渠道

    2023-2-16
  • 2V7002LT1G中文产品资料功能描述

    2V7002LT1G中文产品资料

    2022-6-6
  • 2SX1-T

    2SX1-T,全新原装现货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.

    2021-2-10
  • 2SK508G-K51-AE3-R

    属性参数值 商品目录结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C时)50mA 漏源电压(Vdss)15V 类型N沟道 最大功率耗散(Ta=25°C)200mW

    2020-11-12
  • 2SK3313

    2SK3313,全新原装当天发货或门市自取0755-82732291.

    2020-3-28
  • 2SK3591-01R

    2SK3591-01R,全新原装当天发货或门市自取0755-82732291.

    2020-3-28