位置：首页 > IC中文资料第141页 > 2SK81
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FASTSWITCHINGN-CHANNELSILICONPOWERMOSFET FASTSWITCHINGN-CHANNELSILICONPOWERMOSFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR FASTSWITCHINGN-CHANNELSILICONPOWERMOSFET Features Suitableforswitchingpowersupplies, actuatercontrols,andpulsecircuits 4VGateDrive-Logiclevel- LargeCurrentSwitching:ID(DC)=12A LowRDS(on) Nosecondbreakdown | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR FASTSWITCHINGN-CHANNELSILICONPOWERMOSFET FEATURES Suitableforswitchingpowersupplies, actuatercontrols,andpulsecircuits 4VGateDrive-Logiclevel- LargeCurrentSwitching:ID(DC)=27A LowRDS(on) Nosecondbreakdown | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR FASTSWITCHINGN-CHANNELSILICONPOWERMOSFET Features Suitableforswitchingpowersupplies, actuatercontrols,andpulsecircuits 4VGateDrive-Logiclevel- LowRDS(on) LargeCurrentSwitching:ID(DC)=21A NoSecondBreakdown | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR FASTSWITCHINGN-CHANNELSILICONPOWERMOSFET FEATURES Suitableforswitchingpowersupplies, actuatercontrols,andpulsecircuits 4VGateDrive-Logiclevel- LowRDS(on) Largecurrentswitching:ID(DC)=26A NoSecondBreakdown | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=55mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
FASTSWITCHINGN-CHANNELSILICONPOWERMOSFET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
FastSwitchingSpeed 文件：68.81 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
FastSwitchingSpeed 文件：68.8 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
2SK81产品属性
- 类型
描述
- 型号
2SK81
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
松下 |
1746+ |
TO3P |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
|||
PANASONIC/松下 |
TO-3P |
265209 |
假一罚十原包原标签常备现货! |
||||
松下 |
22+ |
TO-3P |
25000 |
原装现货,价格优惠,假一罚十 |
|||
PANASONIC/松下 |
24+ |
TO3P |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
MAT |
22+ |
TO-3P |
25000 |
只做原装进口现货,专注配单 |
|||
松下 |
24+ |
TO-3P |
12300 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
|||
NEC |
2021+ |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
08PB |
60000 |
||||||
PANASONIC/松下 |
23+ |
TO-3P |
10000 |
公司只做原装正品 |
|||
松下 |
10+ |
TO-3P |
470 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
2SK81芯片相关品牌
2SK81规格书下载地址
2SK81参数引脚图相关
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2SK81数据表相关新闻
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优势渠道
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2V7002LT1G中文产品资料
2022-6-62SX1-T
2SX1-T，全新原装现货0755-82732291当天发货或门市自取.QQ：1755232575/QQ：1157611585，微信号:87680558.
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属性参数值 商品目录结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C时）50mA 漏源电压（Vdss）15V 类型N沟道 最大功率耗散（Ta=25°C）200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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