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2SK374价格
参考价格:¥10.9875
型号:2SK3745LS-1E 品牌:ONSemi 备注:这里有2SK374多少钱,2024年最近7天走势,今日出价,今日竞价,2SK374批发/采购报价,2SK374行情走势销售排行榜,2SK374报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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2SK374 | SiliconN-ChannelJunctionFET SiliconN-ChannelJunctionFET Forlow-frequencyamplification Forswitching ■Features ●Lownoise-figure(NF) ●HighgatetodrainvoltageVGDO ●Mini-typepackage,allowingdownsizingofthesetsandautomaticinsertionthroughthetape/magazinepacking. | PanasonicPanasonic Corporation 松下松下电器 | ||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3740isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforhighvoltageapplicationssuchaslampdrive,DC/DCconverter,andactuatordriver. FEATURES •Gatevoltagerating:±30V •Lowon-stateresistanc | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFieldEffectTransistor Features Gatevoltagerating:±30V Lowon-stateresistance RDS(on)=160mÙMAX.(VGS=10V,ID=10A) Lowgatecharge QG=47nCTYP.(VDD=200V,VGS=10V,ID=20A) Surfacemountpackageavailable | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3740isN-channelMOSFETdevicethat featuresalowon-stateresistanceandexcellent switchingcharacteristics,designedforhighvoltage applicationssuchaslampdrive,DC/DCconverter,and actuatordriver. FEATURES •Gatevolta | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3740isN-channelMOSFETdevicethat featuresalowon-stateresistanceandexcellent switchingcharacteristics,designedforhighvoltage applicationssuchaslampdrive,DC/DCconverter,and actuatordriver. FEATURES •Gatevolta | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3740isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforhighvoltageapplicationssuchaslampdrive,DC/DCconverter,andactuatordriver. FEATURES •Gatevoltagerating:±30V •Lowon-stateresistanc | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconN-ChannelMOSTypeSwitchingRegulatorApplications SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=2.2Ω(typ.) •Highforwardtransferadmittance:|Yfs|=3.5S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=720V) •Enhancementmodel:Vth=4.0to5.0V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNChannelMOSTypeSwitchingRegulatorApplications SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.29Ω(typ.) •Highforwardtransferadmittance:|Yfs|=5.8S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDSS=450V) •Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
High-Voltage,High-SpeedSwitchingApplications High-Voltage,High-SpeedSwitchingApplications Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching •Highreliability(AdoptionofHVPprocess) •Micalesspackagefacilitatingmounting •Avalancheresistanceguarantee | SANYOSanyo 三洋三洋电机株式会社 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=2.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-ChannelPowerMOSFET Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching •Highreliability(AdoptionofHVPprocess) •Micalesspackagefacilitatingmounting •Avalancheresistanceguarantee | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-ChannelPowerMOSFET Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching •Highreliability(AdoptionofHVPprocess) •Micalesspackagefacilitatingmounting •Avalancheresistanceguarantee | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High-Voltage,High-SpeedSwitchingApplications High-Voltage,High-SpeedSwitchingApplications Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching. •Highreliability(AdoptionofHVPprocess). •Avalancheresistanceguarantee. | SANYOSanyo 三洋三洋电机株式会社 | |||
N-ChannelPowerMOSFET Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching •Highreliability(AdoptionofHVPprocess) •Avalancheresistanceguarantee | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=2.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-ChannelPowerMOSFET Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching •Highreliability(AdoptionofHVPprocess) •Avalancheresistanceguarantee | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High-Voltage,High-SpeedSwitchingApplications High-Voltage,High-SpeedSwitchingApplications Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching. •Highreliability(AdoptionofHVPprocess). •AttachmentworkabilityisgoodbyMica-lesspackage. •Avalancheresistanceguarantee. | SANYOSanyo 三洋三洋电机株式会社 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=2.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
High-Voltage,High-SpeedSwitchingApplications High-Voltage,High-SpeedSwitchingApplications Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching. •Highreliability(AdoptionofHVPprocess). •AttachmentworkabilityisgoodbyMica-lesspackage. •Avalancheresistanceguarantee | SANYOSanyo 三洋三洋电机株式会社 | |||
N-ChannelPowerMOSFET Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching •Highreliability(AdoptionofHVPprocess) •AttachmentworkabilityisgoodbyMica-lesspackage •Avalancheresistanceguarantee | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-ChannelPowerMOSFET Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching •Highreliability(AdoptionofHVPprocess) •AttachmentworkabilityisgoodbyMica-lesspackage •Avalancheresistanceguarantee | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-CHANNELMOSFETFORHIGH-SPEEDSWITCHING DESCRIPTION The2SK3749isanN-channelverticalMOSFET.Becauseitcanbedrivenbyavoltageaslowas2.5Vanditisnotnecessarytoconsideradrivecurrent,thisFETisidealasanactuatorforlow-currentportablesystemssuchasheadphonestereosandvideocameras. FEATURES •Gatecan | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR N-CHANNELMOSFETFORHIGH-SPEEDSWITCHIG DESCRIPTION The2SK3749isanN-channelverticalMOSFET.Because itcanbedrivenbyavoltageaslowas2.5Vanditisnot necessarytoconsideradrivecurrent,thisFETisidealasan actuatorforlow-currentportablesystemssuchasheadphone | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
N-Channel60-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowOn-Resistance:2Ω •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective20 | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
SwitchingRegulatorApplications 文件:200.74 Kbytes Page:6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
iscN-ChannelMOSFETTransistor 文件:332.17 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SwitchingRegulatorApplications 文件:200.74 Kbytes Page:6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SwitchingRegulatorApplications 文件:241.64 Kbytes Page:6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SwitchingRegulatorApplications 文件:241.64 Kbytes Page:6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
High-Voltage,High-SpeedSwitchingApplications 文件:90.53 Kbytes Page:7 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
High-Voltage,High-SpeedSwitchingApplications 文件:90.53 Kbytes Page:7 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
High-Voltage,High-SpeedSwitchingApplications 文件:497.04 Kbytes Page:7 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
High-Voltage,High-SpeedSwitchingApplications 文件:497.04 Kbytes Page:7 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
N-ChannelPowerMOSFET 文件:239.99 Kbytes Page:7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High-Voltage,High-SpeedSwitchingApplications 文件:107.17 Kbytes Page:7 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
N-ChannelPowerMOSFET 文件:239.99 Kbytes Page:7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High-Voltage,High-SpeedSwitchingApplications 文件:107.17 Kbytes Page:7 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
High-Voltage,High-SpeedSwitchingApplications 文件:58.07 Kbytes Page:4 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
High-Voltage,High-SpeedSwitchingApplications 文件:58.07 Kbytes Page:4 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
High-Voltage,High-SpeedSwitchingApplications 文件:107.18 Kbytes Page:7 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
High-Voltage,High-SpeedSwitchingApplications 文件:107.18 Kbytes Page:7 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
N-Channel60-V(D-S)MOSFET 文件:1.0124 Mbytes Page:8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 |
2SK374产品属性
- 类型
描述
- 型号
2SK374
- 制造商
Renesas Electronics Corporation
- 功能描述
Transistor,FET,Nch,250V/20A,TO263
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
08PB |
60000 |
||||||
PANASONIC/松下 |
SOT23 |
7906200 |
|||||
NEC-日本电气 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
TOSHIBA |
23+ |
TO-220F |
5000 |
原装正品,假一罚十 |
|||
TOSHIBA |
04+ |
TO220F |
50 |
进口原装现货假一赔十 |
|||
NEC |
2339+ |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
TOS进口原 |
17+ |
TO-220F |
6200 |
||||
TOSHIBA |
23+ |
TO-220F |
9526 |
||||
NEC |
24+ |
SC70 |
45000 |
热卖优势现货 |
2SK374规格书下载地址
2SK374参数引脚图相关
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- 5000
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- 2SK3812-ZP-E1-AY
- 2SK3799
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- 2SK3783
- 2SK3782
- 2SK3772-01
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- 2SK3758
- 2SK3757
- 2SK3756(TE12L,F)
- 2SK3756
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- 2SK375
- 2SK374-R
- 2SK3749
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- 2SK3748
- 2SK3747-1E
- 2SK3747
- 2SK3746-1E
- 2SK3746
- 2SK3745LS-1E
- 2SK3743
- 2SK3742
- 2SK3740
- 2SK3738-TL-E
- 2SK3738
- 2SK3737
- 2SK3736
- 2SK3731
- 2SK373
- 2SK3723
- 2SK3720
- 2SK372
- 2SK3719
- 2SK3718
- 2SK3717
- 2SK3716
- 2SK3715
- 2SK3714
- 2SK3713
- 2SK3712
- 2SK3711
- 2SK3710
- 2SK371
- 2SK3709
- 2SK3703-1E
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- 2SK3669
- 2SK3666-3-TB-E
- 2SK3666-2-TB-E
- 2SK3664
- 2SK3663
- 2SK3653B
- 2SK3632-Z
- 2SK3582CT-B
- 2SK3577
- 2SK3576
- 2SK3566(STA4,Q,M)
- 2SK3565(Q,M)
- 2SK3564(STA4,Q,M)
- 2SK3557-7-TB-E
- 2SK3557-6-TB-E
- 2SK3557
2SK374数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3484-Z-E1-AZ ManufacturerPartNumber: 2SK3484-Z-E1-AZ Brand_Name: Renesas RohsCode: Yes PartLifeCycleCode: NotRecommended IhsManufacturer: RENESASELECTRONICSCORP PartPackage
2021-6-242SX1-T
2SX1-T,全新原装现货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.
2021-2-102SK508G-K51-AE3-R
属性参数值 商品目录结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C时)50mA 漏源电压(Vdss)15V 类型N沟道 最大功率耗散(Ta=25°C)200mW
2020-11-122SK3313
2SK3313,全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R,全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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