2SK374价格

参考价格:¥10.9875

型号:2SK3745LS-1E 品牌:ONSemi 备注:这里有2SK374多少钱,2024年最近7天走势,今日出价,今日竞价,2SK374批发/采购报价,2SK374行情走势销售排行榜,2SK374报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SK374

SiliconN-ChannelJunctionFET

SiliconN-ChannelJunctionFET Forlow-frequencyamplification Forswitching ■Features ●Lownoise-figure(NF) ●HighgatetodrainvoltageVGDO ●Mini-typepackage,allowingdownsizingofthesetsandautomaticinsertionthroughthetape/magazinepacking.

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3740isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforhighvoltageapplicationssuchaslampdrive,DC/DCconverter,andactuatordriver. FEATURES •Gatevoltagerating:±30V •Lowon-stateresistanc

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFieldEffectTransistor

Features Gatevoltagerating:±30V Lowon-stateresistance RDS(on)=160mÙMAX.(VGS=10V,ID=10A) Lowgatecharge QG=47nCTYP.(VDD=200V,VGS=10V,ID=20A) Surfacemountpackageavailable

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3740isN-channelMOSFETdevicethat featuresalowon-stateresistanceandexcellent switchingcharacteristics,designedforhighvoltage applicationssuchaslampdrive,DC/DCconverter,and actuatordriver. FEATURES •Gatevolta

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3740isN-channelMOSFETdevicethat featuresalowon-stateresistanceandexcellent switchingcharacteristics,designedforhighvoltage applicationssuchaslampdrive,DC/DCconverter,and actuatordriver. FEATURES •Gatevolta

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3740isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforhighvoltageapplicationssuchaslampdrive,DC/DCconverter,andactuatordriver. FEATURES •Gatevoltagerating:±30V •Lowon-stateresistanc

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SiliconN-ChannelMOSTypeSwitchingRegulatorApplications

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=2.2Ω(typ.) •Highforwardtransferadmittance:|Yfs|=3.5S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=720V) •Enhancementmodel:Vth=4.0to5.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNChannelMOSTypeSwitchingRegulatorApplications

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.29Ω(typ.) •Highforwardtransferadmittance:|Yfs|=5.8S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDSS=450V) •Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

High-Voltage,High-SpeedSwitchingApplications

High-Voltage,High-SpeedSwitchingApplications Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching •Highreliability(AdoptionofHVPprocess) •Micalesspackagefacilitatingmounting •Avalancheresistanceguarantee

SANYOSanyo

三洋三洋电机株式会社

SANYO

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=2.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-ChannelPowerMOSFET

Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching •Highreliability(AdoptionofHVPprocess) •Micalesspackagefacilitatingmounting •Avalancheresistanceguarantee

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-ChannelPowerMOSFET

Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching •Highreliability(AdoptionofHVPprocess) •Micalesspackagefacilitatingmounting •Avalancheresistanceguarantee

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

High-Voltage,High-SpeedSwitchingApplications

High-Voltage,High-SpeedSwitchingApplications Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching. •Highreliability(AdoptionofHVPprocess). •Avalancheresistanceguarantee.

SANYOSanyo

三洋三洋电机株式会社

SANYO

N-ChannelPowerMOSFET

Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching •Highreliability(AdoptionofHVPprocess) •Avalancheresistanceguarantee

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=2.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-ChannelPowerMOSFET

Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching •Highreliability(AdoptionofHVPprocess) •Avalancheresistanceguarantee

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

High-Voltage,High-SpeedSwitchingApplications

High-Voltage,High-SpeedSwitchingApplications Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching. •Highreliability(AdoptionofHVPprocess). •AttachmentworkabilityisgoodbyMica-lesspackage. •Avalancheresistanceguarantee.

SANYOSanyo

三洋三洋电机株式会社

SANYO

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=2.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

High-Voltage,High-SpeedSwitchingApplications

High-Voltage,High-SpeedSwitchingApplications Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching. •Highreliability(AdoptionofHVPprocess). •AttachmentworkabilityisgoodbyMica-lesspackage. •Avalancheresistanceguarantee

SANYOSanyo

三洋三洋电机株式会社

SANYO

N-ChannelPowerMOSFET

Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching •Highreliability(AdoptionofHVPprocess) •AttachmentworkabilityisgoodbyMica-lesspackage •Avalancheresistanceguarantee

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-ChannelPowerMOSFET

Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching •Highreliability(AdoptionofHVPprocess) •AttachmentworkabilityisgoodbyMica-lesspackage •Avalancheresistanceguarantee

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-CHANNELMOSFETFORHIGH-SPEEDSWITCHING

DESCRIPTION The2SK3749isanN-channelverticalMOSFET.Becauseitcanbedrivenbyavoltageaslowas2.5Vanditisnotnecessarytoconsideradrivecurrent,thisFETisidealasanactuatorforlow-currentportablesystemssuchasheadphonestereosandvideocameras. FEATURES •Gatecan

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFIELDEFFECTTRANSISTOR

N-CHANNELMOSFETFORHIGH-SPEEDSWITCHIG DESCRIPTION The2SK3749isanN-channelverticalMOSFET.Because itcanbedrivenbyavoltageaslowas2.5Vanditisnot necessarytoconsideradrivecurrent,thisFETisidealasan actuatorforlow-currentportablesystemssuchasheadphone

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowOn-Resistance:2Ω •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective20

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SwitchingRegulatorApplications

文件:200.74 Kbytes Page:6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

iscN-ChannelMOSFETTransistor

文件:332.17 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SwitchingRegulatorApplications

文件:200.74 Kbytes Page:6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SwitchingRegulatorApplications

文件:241.64 Kbytes Page:6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SwitchingRegulatorApplications

文件:241.64 Kbytes Page:6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

High-Voltage,High-SpeedSwitchingApplications

文件:90.53 Kbytes Page:7 Pages

SANYOSanyo

三洋三洋电机株式会社

SANYO

High-Voltage,High-SpeedSwitchingApplications

文件:90.53 Kbytes Page:7 Pages

SANYOSanyo

三洋三洋电机株式会社

SANYO

High-Voltage,High-SpeedSwitchingApplications

文件:497.04 Kbytes Page:7 Pages

SANYOSanyo

三洋三洋电机株式会社

SANYO

High-Voltage,High-SpeedSwitchingApplications

文件:497.04 Kbytes Page:7 Pages

SANYOSanyo

三洋三洋电机株式会社

SANYO

N-ChannelPowerMOSFET

文件:239.99 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

High-Voltage,High-SpeedSwitchingApplications

文件:107.17 Kbytes Page:7 Pages

SANYOSanyo

三洋三洋电机株式会社

SANYO

N-ChannelPowerMOSFET

文件:239.99 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

High-Voltage,High-SpeedSwitchingApplications

文件:107.17 Kbytes Page:7 Pages

SANYOSanyo

三洋三洋电机株式会社

SANYO

High-Voltage,High-SpeedSwitchingApplications

文件:58.07 Kbytes Page:4 Pages

SANYOSanyo

三洋三洋电机株式会社

SANYO

High-Voltage,High-SpeedSwitchingApplications

文件:58.07 Kbytes Page:4 Pages

SANYOSanyo

三洋三洋电机株式会社

SANYO

High-Voltage,High-SpeedSwitchingApplications

文件:107.18 Kbytes Page:7 Pages

SANYOSanyo

三洋三洋电机株式会社

SANYO

High-Voltage,High-SpeedSwitchingApplications

文件:107.18 Kbytes Page:7 Pages

SANYOSanyo

三洋三洋电机株式会社

SANYO

N-Channel60-V(D-S)MOSFET

文件:1.0124 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

2SK374产品属性

  • 类型

    描述

  • 型号

    2SK374

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Transistor,FET,Nch,250V/20A,TO263

更新时间:2024-5-22 17:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
08PB
60000
PANASONIC/松下
SOT23
7906200
NEC-日本电气
24+25+/26+27+
TO-263-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
TOSHIBA
23+
TO-220F
5000
原装正品,假一罚十
TOSHIBA
04+
TO220F
50
进口原装现货假一赔十
NEC
2339+
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
TOS进口原
17+
TO-220F
6200
TOSHIBA
23+
TO-220F
9526
NEC
24+
SC70
45000
热卖优势现货

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