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2SK30价格
参考价格:¥0.5200
型号:2SK3000 品牌:HITACHI 备注:这里有2SK30多少钱,2024年最近7天走势,今日出价,今日竞价,2SK30批发/采购报价,2SK30行情走势销售排行榜,2SK30报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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2SK30 | SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •SuperLowOn-StateResistance RDS(on)1=17mΩMAX.(VGS=10V,ID=28A) RDS(on)2=27mΩMAX.(VGS=4.0V,ID=28A) •LowCiss:Ciss=2100pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | ||
2SK30 | SiliconN-ChannelPowerF-MOSFET ■Features ●Avalancheenergycapacityguaranteed ●High-speedswitching ●LowON-resistance ●Nosecondarybreakdown ■Applications ●Contactlessrelay ●Divingcircuitforasolenoid ●Drivingcircuitforamotor ●Controlequipment ●Switchingpowersupply | PanasonicPanasonic Corporation 松下松下电器 | ||
2SK30 | Low-FrequencyAmpApplications? Low-FrequencyAmplifierApplications Features •Idealforpotentiometers,analogswitches,lowfrequencyamplifiers,andconstant-currentregulators. | SANYOSanyo 三洋三洋电机株式会社 | ||
2SK30 | SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=6mΩtyp. •Lowdrivecurrent •4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi, Ltd. 日立公司 | ||
2SK30 | NCHANNELMOSTYPE(FMTUNER,VHFRFAMPLIFIERAPPLICATIONS) FMTuner,VHFRFAmplifierApplications Lowreversetransfercapacitance:Crss=0.035pF(typ.) Lownoisefigure:NF=1.7dB(typ.) Highpowergain:Gps=28dB(typ.) Recommendoperationvoltage:5~15V | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | ||
2SK300
| SonySONY 索尼 | |||
SiliconNChannelMOSFETLowFrequencyPowerSwitching SiliconNChannelMOSFETLowFrequencyPowerSwitching Features •Lowon-resistanceRDS(on)=0.16Ωtyp.(VGS=10V,ID=450mA) •4Vgatedrivedevices. •Smallpackage(MPAK) •Expansivedraintosourcesurgepowercapability | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNChannelMOSFETLowFrequencyPowerSwitching Features •Lowon-resistance RDS(on)=0.25Ωtyp.(VGS=10V,ID=450mA) •4Vgatedrivedevices. •Smallpackage(MPAK) •Expansivedraintosourcesurgepowercapability | HitachiHitachi, Ltd. 日立公司 | |||
GaAsHEMTLowNoiseAmplifier Features ·Excellentlownoisecharacteristics. Fmin=0.8dBtyp.(3V,5mA,0.9GHz) ·Highassociatedgain. Ga=18dBtyp.(3V,5mA,0.9GHz) ·Smallpackage.(CMPAK-4) | HitachiHitachi, Ltd. 日立公司 | |||
Externaldimensions1 Externaldimensions1......FM20 | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Externaldimensions Externaldimensions1......FM20 *1:PW100µs,dutycycle1 *2:VDD=25V,L=650µH,IL=18A,unclamped,RG=50Ω,SeeFigure1onPage5. | SankenSanken Electric Co Ltd. 三垦日本三垦 | |||
Externaldimensions1......FM20 Externaldimensions1......FM20 | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Externaldimensions Sanken/MOSFET(2SK1177thru2SK3460) | SankenSanken Electric Co Ltd. 三垦日本三垦 | |||
VX-2SeriesPowerMOSFET(600V8A) N-ChannelEnhancementtype FEATURES ●Inputcapacitance(Ciss)issmall.Especially,inputcapacitanceat0biassissmall. ●ThestaticRds(on)issmall. ●Theswitchingtimeisfast. ●Avalancheresistanceguaranteed. APPLICATION ●SwitchingpowersupplyofAC100-200Vinput ●Inverter | SHINDENGENSHINDENGEN ELECTRIC MANUFACTURING CO.LTD 新电元(上海)电器有限公司 | |||
SINCHANNELJUCTION 2SK247SiN-ChannelJunction1Page Wide-Band,Low-NoiseAmplifier 2SK301SiN-ChannelJunction3Page AFAmplifier,Switching 2SK316SiN-ChannelJunction5Page VideCameraFirstStageAmplifier | PanasonicPanasonic Corporation 松下松下电器 | |||
VX-2SeriesPowerMOSFET(600V16A) FEATURES ●Inputcapacitance(Ciss)issmall.Especially,inputcapacitanceat0biasssmall. ●ThestaticRds(on)issmall. ●Theswitchingtimeisfast. ●Avalancheresistanceguaranteed. APPLICATION ●SwitchingpowersupplyofAC100~200Vinput ●Inverter ●PowerFactorControlCircuit | SHINDENGENSHINDENGEN ELECTRIC MANUFACTURING CO.LTD 新电元(上海)电器有限公司 | |||
NCHANNELMOSTYPE(HIGHVOLTAGESWITCHING,DC-DCCONVERTER,RELAYDRIVEANDMOTORDRIVEAPPLICATIONS) DC−DCConverter,RelayDriveandMotorDriveApplications Lowdrain−sourceONresistance:RDS(ON)=1.05Ω(typ.) Highforwardtransferadmittance:|Yfs|=7.0S(typ.) Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1m | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
N-ChannelEnhancementModeFieldEffectTransistor Features •LowON-Resistance •LowInputCapacitance •LowVoltagedrivemakesthisdeviceidipmentealforportableequipment •FastSwitchingSpeed •EasilyDesignedDriveCircuits •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
N-CHANNELMOSFETinaSOT-23PlasticPackage Descriptions N-CHANNELMOSFETinaSOT-23PlasticPackage. Features Lowon-resistance,fastswitchingspeed,lowvoltagedrive,easilydesigneddrivecircuits,easytoparallel. Applications Interfacing,switching. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
N-channelMOSFET N-channelMOSFET FEATURE ●Lowon-resistance ●Fastswitchingspeed ●LowvoltagedrivemakesthisdeviceidealforPortableequipment ●Easilydesigneddrivecircuits ●Easytoparallel APPLICATION ●Interfacing,Switching | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
2.5VDriveNchMOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. Applications Interfacing,switching(30V,100mA) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SOT-23Plastic-EncapsulateMOSFET N-ChannelMOSFET Features ●Lowon-resistance ●Fastswitchingspeed ●LowvoltagedrivemakesthisdeviceidealforPortableequipment ●Easilydesigneddrivecircuits ●Easytoparallel Applications ●Interfacing,Switching | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | |||
N-ChannelEnhancementModeMOSFET •Structure SiliconN-channelMOSFET •Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Easilydesigneddrivecircuits. 5)Easytoparallel. •Applications Interfacing,switching(3 | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
N-ChannelEnhancement-ModeMOSFETs N-ChannelEnhancement-ModeMOSFETs | GSMEGuilin Strong Micro-Electronics Co., Ltd. Guilin Strong Micro-Electronics Co., Ltd. | |||
Lowon-resistance,Fastswitchingspped,SiliconN-channelMOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Easilydesigneddrivecirduits. 5)Easytoparallel. Applications Interfacing,switching(30V,100mA) | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
Smallswitching(30V,0.1A) Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. Applications Interfacing,switching(30V,100mA) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
N-ChannelMOSFET ■Features ●Lowon-resistance. ●Fastswitchingspeed. ●SiliconN-channelMOSFET ●Drivecircuitscanbesimple. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
N-Channel30-V(D-S)MOSFET zFeatures 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. 6)ESDprotected2KVHBM zApplications Interfacing,switching(30V,100mA) | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | |||
SOT-323Plastic-EncapsulateN-channelMOSFETS FEATURE Lowon-resistance Fastswitchingspeed Lowvoltagedrivemakesthisdeviceidealfor Easilydesigneddrivecircuits Easytoparallel Portableequipment APPLICATION Interfacing,Switching | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
Plastic-EncapsulateMOSFETS FEATURES Lowon-resistance Fastswitchingspeed Lowvoltagedrivemakesthisdevice Easilydesigneddrivecircuits Easytoparallel idealforportableequipment | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | |||
N-ChannelMOSFET ■Features ●VDS(V)=30V ●ID=0.1A ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SOT-23Plastic-EncapsulateMOSFETS FEATURES Lowon-resistance Fastswitchingspeed Lowvoltagedrivemakesthisdeviceidealforportableequipment Easilydesigneddrivecircuits Easytoparallel | WILLASWILLAS electronics corp 威倫威倫电子股份有限公司 | |||
ESDprotectedN-ChannelEnhancementModeMOSFET Description •Lowvoltagedrive(2Vdrive)makesthisdeviceidealforportableequipment. •Highspeedswitching •ESDprotecteddevice •Pb-freeleadplating&halogen-freepackage | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | |||
2.5VDriveNchMOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. Applications Interfacing,switching(30V,100mA) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
2.5VDriveNchMOSFET Structure SiliconN-channelMOSFET Features 1)Lowon-resistance. 2)Lowvoltagedrive(2.5Vdrive). Application Switching | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
N-ChannelMOSFETinaSOT-323PlasticPackage Descriptions N-ChannelMOSFETinaSOT-323PlasticPackage. Features Lowon-resistance,fastswitchingspeed,lowvoltagedrive,easilydesigneddrivecircuits,easytoparallel. Applications Interfacing,switching. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
N-channelMOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Easilydesigneddrivecirduits. 5)Easytoparallel. Applications Interfacing,switching(30V,100mA) | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
N-channelMOSFET FEATURES ●Lowon-resistance ●Fastswitchingspeed ●Lowvoltagedrivemakesthisdeviceidealforportableequipment ●Easilydesigneddrivecircuits ●Easytoparallel | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
N-ChannelPOWERMOSFET Description: *Lowon-resistance. *Fastswitchingspeed. *Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. *Easilydesigneddrivecircuits. *Easytoparallel. Features: *SimpleDriveRequirement *SmallPackageOutline | WEITRONWEITRON 威堂電子科技 | |||
SOT-323Plastic-EncapsulateMOSFETS FEATURES Lowon-resistance Fastswitchingspeed Lowvoltagedrivemakesthisdeviceidealforportableequipment Easilydesigneddrivecircuits Easytoparallel | WILLASWILLAS electronics corp 威倫威倫电子股份有限公司 | |||
N-ChannelPlastic-EncapsulateTransistor Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •LowON-Resistance •Lowvoltagedrivemakesthisdeviceidealforportableequipment •FastSwitchingSpeed •Easilydesigneddrivecircuits •Easytoparallel •AvailableinLead | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
N-ChannelMOSFET ■Features ●Lowon-resistance. ●Fastswitchingspeed. ●Lowvoltagedrive(2.5V)makesthis deviceidealforportableequipment. ●Easilydesigneddrivecircuits. ●Easytoparallel. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
N-channelMOSFET SOT-523Plastic-EncapsulateMOSFETS FEATURE ●Lowon-resistance ●Fastswitchingspeed ●Lowvoltagedrivemakesthisdeviceidealfor Portableequipment ●Easilydesigneddrivecircuits ●Easytoparallel APPLICATION ●Interfacing,Switching | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
2.5VDriveNchMOSFET Smallswitching(30V,0.1A) Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Easilydesigneddrivecircuits. 5)Easytoparallel. Applications Interfacing,switching(30V,100mA) Structure S | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
N-channelMOSFET N-ChannelFieldEffectTransistor Features ●Lowon-resistance. ●Fastswitchingspeed. ●Lowvoltagedrive(2.5V)makesthis deviceidealforportableequipment. ●Easilydesigneddrivecircuits. ●Easytoparallel. Applications ●Interfacing,switching | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
Smallswitching(30V,0.1A) Smallswitching(30V,0.1A) Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Easilydesigneddrivecircuits. 5)Easytoparallel. Applications Interfacing,switching(30V,100mA) Structure S | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
N-Channel30-V(D-S)MOSFET zFeatures 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. 6)ESDprotected2KVHBM zApplications Interfacing,switching(30V,100mA) | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | |||
SOT-523Plastic-EncapsulateMOSFETS FEATURE Lowon-resistance Fastswitchingspeed Lowvoltagedrivemakesthisdeviceidealfor Portableequipment Easilydesigneddrivecircuits Easytoparallel | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
2.5VDriveNchMOSFET Features 1)High-speedswitching. 2)Lowvoltagedrive(2.5Vdrive). 3)Drivecircuitscanbesimple. 4)Paralleluseiseasy. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
2.5VDriveNchMOSFET Smallswitching(30V,0.1A) Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Easilydesigneddrivecircuits. 5)Easytoparallel. Applications Interfacing,switching(30V,100mA) Structure S | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
NCHANNELMOSTYPE(FMTUNER,VHFRFAMPLIFIERAPPLICATIONS) FMTuner,VHFRFAmplifierApplications Lowreversetransfercapacitance:Crss=0.035pF(typ.) Lownoisefigure:NF=1.7dB(typ.) Highpowergain:Gps=28dB(typ.) Recommendoperationvoltage:5~15V | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconN-ChannelPowerF-MOSFET ■Features ●Avalancheenergycapacityguaranteed ●High-speedswitching ●LowON-resistance ●Nosecondarybreakdown ●Low-voltagedrive ●Highelectrostaticbreakdownvoltage ■Applications ●Contactlessrelay ●Divingcircuitforasolenoid ●Drivingcircuitforamotor | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconN-ChannelPowerF-MOSFET Features Avalancheenergycapacityguaranteed High-speedswitching LowON-resistance Nosecondarybreakdown Low-voltagedrive Highelectrostaticbreakdownvoltage | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SiliconN-ChannelPowerF-MOSFET ■Features ●Avalancheenergycapacityguaranteed ●High-speedswitching ●LowON-resistance ●Nosecondarybreakdown ●Low-voltagedrive ●Highelectrostaticbreakdownvoltage ■Applications ●Contactlessrelay ●Divingcircuitforasolenoid ●Drivingcircuitforamotor | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconN-ChannelPowerF-MOSFET ■Features ●Avalancheenergycapacityguaranteed ●High-speedswitching ●LowON-resistance ●Nosecondarybreakdown ●Low-voltagedrive ●Highelectrostaticbreakdownvoltage ■Applications ●Contactlessrelay ●Divingcircuitforasolenoid ●Drivingcircuitfor | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconN-ChannelPowerF-MOSFET Features ●Avalancheenergycapacityguaranteed ●High-speedswitching ●LowON-resistance ●Nosecondarybreakdown ●Low-voltagedrive ●Highelectrostaticbreakdownvoltage | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
N-ChannelMOSFET ■Features ●VDS(V)=60V ●ID=20A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SiliconN-ChannelPowerF-MOSFET Features ●Avalancheenergycapacityguaranteed ●High-speedswitching ●LowON-resistance ●Nosecondarybreakdown ●Low-voltagedrive ●Highelectrostaticbreakdownvoltage | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SiliconN-ChannelPowerF-MOSFET ■Features ●Avalancheenergycapacityguaranteed ●High-speedswitching ●LowON-resistance ●Nosecondarybreakdown ●Low-voltagedrive ●Highelectrostaticbreakdownvoltage ■Applications ●Contactlessrelay ●Divingcircuitforasolenoid ●Drivingcircuitfor | PanasonicPanasonic Corporation 松下松下电器 |
2SK30产品属性
- 类型
描述
- 型号
2SK30
- 制造商
ROHM
- 制造商全称
Rohm
- 功能描述
Small switching(30V, 0.1A)
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HIT |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
||||
ROHM |
22+ |
SOT523 |
96000 |
原装进口现货假一赔十 |
|||
TOSHIBA/东芝 |
2022+ |
SC-62 |
7600 |
原厂原装,假一罚十 |
|||
ROHM/罗姆 |
22+ |
SOT323 |
60620 |
6380 |
|||
UTC/友顺 |
20+ |
SOT-23 |
880000 |
明嘉莱只做原装正品现货 |
|||
TOS |
19+ |
OT92 |
30000 |
绝对原装现货,价格优惠。可17税 |
|||
CJ |
22+ |
SOD-523 |
19415 |
||||
ROHM |
22+ |
N/A |
232 |
只做原装 正品 |
|||
CJ/长电 |
21+ |
SOT523 |
704 |
原装现货假一赔十 |
|||
TOSHIBA/东芝 |
SC-62 |
6000 |
2SK30规格书下载地址
2SK30参数引脚图相关
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- 2SK302500L
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- 2SK3024
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- 2SK2996
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- 2SK2993
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- 2SK2985
- 2SK2984
- 2SK2983
- 2SK2981
- 2SK2980
- 2SK2978ZY
- 2SK2978
- 2SK2977
- 2SK2976
- 2SK2975
- 2SK2974
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3105-T1B-A ManufacturerPartNumber: 2SK3105-T1B-A Brand_Name: Renesas PbfreeCode: Yes RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: RENESASELECTRONICSCORP P
2021-6-242SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 ManufacturerPartNumber: 2SK3065 RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: ROHMCOLTD PackageDescription: , ReachComplianceCode: compliant ECCNCode: EAR99 Manufacturer:
2021-6-242SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK2415-Z-E1-AZ ManufacturerPartNumber: 2SK2415-Z-E1-AZ Brand_Name: Renesas RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: RENESASELECTRONICSCORP PackageDescriptio
2021-6-242SK2698
2SK2698,全新原装当天发货或门市自取0755-82732291.
2019-11-14
DdatasheetPDF页码索引
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