2SK30价格

参考价格:¥0.5200

型号:2SK3000 品牌:HITACHI 备注:这里有2SK30多少钱,2024年最近7天走势,今日出价,今日竞价,2SK30批发/采购报价,2SK30行情走势销售排行榜,2SK30报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SK30

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •SuperLowOn-StateResistance RDS(on)1=17mΩMAX.(VGS=10V,ID=28A) RDS(on)2=27mΩMAX.(VGS=4.0V,ID=28A) •LowCiss:Ciss=2100pF

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK30

SiliconN-ChannelPowerF-MOSFET

■Features ●Avalancheenergycapacityguaranteed ●High-speedswitching ●LowON-resistance ●Nosecondarybreakdown ■Applications ●Contactlessrelay ●Divingcircuitforasolenoid ●Drivingcircuitforamotor ●Controlequipment ●Switchingpowersupply

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SK30

Low-FrequencyAmpApplications?

Low-FrequencyAmplifierApplications Features •Idealforpotentiometers,analogswitches,lowfrequencyamplifiers,andconstant-currentregulators.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SK30

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=6mΩtyp. •Lowdrivecurrent •4Vgatedrivedevicecanbedrivenfrom5Vsource

HitachiHitachi, Ltd.

日立公司

Hitachi
2SK30

NCHANNELMOSTYPE(FMTUNER,VHFRFAMPLIFIERAPPLICATIONS)

FMTuner,VHFRFAmplifierApplications Lowreversetransfercapacitance:Crss=0.035pF(typ.) Lownoisefigure:NF=1.7dB(typ.) Highpowergain:Gps=28dB(typ.) Recommendoperationvoltage:5~15V

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SK300

SonySONY

索尼

Sony

SiliconNChannelMOSFETLowFrequencyPowerSwitching

SiliconNChannelMOSFETLowFrequencyPowerSwitching Features •Lowon-resistanceRDS(on)=0.16Ωtyp.(VGS=10V,ID=450mA) •4Vgatedrivedevices. •Smallpackage(MPAK) •Expansivedraintosourcesurgepowercapability

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNChannelMOSFETLowFrequencyPowerSwitching

Features •Lowon-resistance RDS(on)=0.25Ωtyp.(VGS=10V,ID=450mA) •4Vgatedrivedevices. •Smallpackage(MPAK) •Expansivedraintosourcesurgepowercapability

HitachiHitachi, Ltd.

日立公司

Hitachi

GaAsHEMTLowNoiseAmplifier

Features ·Excellentlownoisecharacteristics. Fmin=0.8dBtyp.(3V,5mA,0.9GHz) ·Highassociatedgain. Ga=18dBtyp.(3V,5mA,0.9GHz) ·Smallpackage.(CMPAK-4)

HitachiHitachi, Ltd.

日立公司

Hitachi

Externaldimensions1

Externaldimensions1......FM20

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Externaldimensions

Externaldimensions1......FM20 *1:PW100µs,dutycycle1 *2:VDD=25V,L=650µH,IL=18A,unclamped,RG=50Ω,SeeFigure1onPage5.

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken

Externaldimensions1......FM20

Externaldimensions1......FM20

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

Externaldimensions

Sanken/MOSFET(2SK1177thru2SK3460)

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken

VX-2SeriesPowerMOSFET(600V8A)

N-ChannelEnhancementtype FEATURES ●Inputcapacitance(Ciss)issmall.Especially,inputcapacitanceat0biassissmall. ●ThestaticRds(on)issmall. ●Theswitchingtimeisfast. ●Avalancheresistanceguaranteed. APPLICATION ●SwitchingpowersupplyofAC100-200Vinput ●Inverter

SHINDENGENSHINDENGEN ELECTRIC MANUFACTURING CO.LTD

新电元(上海)电器有限公司

SHINDENGEN

SINCHANNELJUCTION

2SK247SiN-ChannelJunction1Page Wide-Band,Low-NoiseAmplifier 2SK301SiN-ChannelJunction3Page AFAmplifier,Switching 2SK316SiN-ChannelJunction5Page VideCameraFirstStageAmplifier

PanasonicPanasonic Corporation

松下松下电器

Panasonic

VX-2SeriesPowerMOSFET(600V16A)

FEATURES ●Inputcapacitance(Ciss)issmall.Especially,inputcapacitanceat0biasssmall. ●ThestaticRds(on)issmall. ●Theswitchingtimeisfast. ●Avalancheresistanceguaranteed. APPLICATION ●SwitchingpowersupplyofAC100~200Vinput ●Inverter ●PowerFactorControlCircuit

SHINDENGENSHINDENGEN ELECTRIC MANUFACTURING CO.LTD

新电元(上海)电器有限公司

SHINDENGEN

NCHANNELMOSTYPE(HIGHVOLTAGESWITCHING,DC-DCCONVERTER,RELAYDRIVEANDMOTORDRIVEAPPLICATIONS)

DC−DCConverter,RelayDriveandMotorDriveApplications Lowdrain−sourceONresistance:RDS(ON)=1.05Ω(typ.) Highforwardtransferadmittance:|Yfs|=7.0S(typ.) Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1m

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowON-Resistance •LowInputCapacitance •LowVoltagedrivemakesthisdeviceidipmentealforportableequipment •FastSwitchingSpeed •EasilyDesignedDriveCircuits •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

N-CHANNELMOSFETinaSOT-23PlasticPackage

Descriptions N-CHANNELMOSFETinaSOT-23PlasticPackage. Features Lowon-resistance,fastswitchingspeed,lowvoltagedrive,easilydesigneddrivecircuits,easytoparallel. Applications Interfacing,switching.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

N-channelMOSFET

N-channelMOSFET FEATURE ●Lowon-resistance ●Fastswitchingspeed ●LowvoltagedrivemakesthisdeviceidealforPortableequipment ●Easilydesigneddrivecircuits ●Easytoparallel APPLICATION ●Interfacing,Switching

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

2.5VDriveNchMOSFET

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. Applications Interfacing,switching(30V,100mA)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SOT-23Plastic-EncapsulateMOSFET

N-ChannelMOSFET Features ●Lowon-resistance ●Fastswitchingspeed ●LowvoltagedrivemakesthisdeviceidealforPortableequipment ●Easilydesigneddrivecircuits ●Easytoparallel Applications ●Interfacing,Switching

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI

N-ChannelEnhancementModeMOSFET

•Structure SiliconN-channelMOSFET •Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Easilydesigneddrivecircuits. 5)Easytoparallel. •Applications Interfacing,switching(3

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

N-ChannelEnhancement-ModeMOSFETs

N-ChannelEnhancement-ModeMOSFETs

GSMEGuilin Strong Micro-Electronics Co., Ltd.

Guilin Strong Micro-Electronics Co., Ltd.

GSME

Lowon-resistance,Fastswitchingspped,SiliconN-channelMOSFET

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Easilydesigneddrivecirduits. 5)Easytoparallel. Applications Interfacing,switching(30V,100mA)

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

Smallswitching(30V,0.1A)

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. Applications Interfacing,switching(30V,100mA)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

N-ChannelMOSFET

■Features ●Lowon-resistance. ●Fastswitchingspeed. ●SiliconN-channelMOSFET ●Drivecircuitscanbesimple.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

N-Channel30-V(D-S)MOSFET

zFeatures 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. 6)ESDprotected2KVHBM zApplications Interfacing,switching(30V,100mA)

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓锋半导体深圳市拓锋半导体科技有限公司

TUOFENG

SOT-323Plastic-EncapsulateN-channelMOSFETS

FEATURE Lowon-resistance Fastswitchingspeed Lowvoltagedrivemakesthisdeviceidealfor Easilydesigneddrivecircuits Easytoparallel Portableequipment APPLICATION Interfacing,Switching

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

Plastic-EncapsulateMOSFETS

FEATURES Lowon-resistance Fastswitchingspeed Lowvoltagedrivemakesthisdevice Easilydesigneddrivecircuits Easytoparallel idealforportableequipment

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI

N-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=0.1A ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SOT-23Plastic-EncapsulateMOSFETS

FEATURES Lowon-resistance Fastswitchingspeed Lowvoltagedrivemakesthisdeviceidealforportableequipment Easilydesigneddrivecircuits Easytoparallel

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

WILLAS

ESDprotectedN-ChannelEnhancementModeMOSFET

Description •Lowvoltagedrive(2Vdrive)makesthisdeviceidealforportableequipment. •Highspeedswitching •ESDprotecteddevice •Pb-freeleadplating&halogen-freepackage

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

CYSTEKEC

2.5VDriveNchMOSFET

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. Applications Interfacing,switching(30V,100mA)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

2.5VDriveNchMOSFET

Structure SiliconN-channelMOSFET Features 1)Lowon-resistance. 2)Lowvoltagedrive(2.5Vdrive). Application Switching

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

N-ChannelMOSFETinaSOT-323PlasticPackage

Descriptions N-ChannelMOSFETinaSOT-323PlasticPackage. Features Lowon-resistance,fastswitchingspeed,lowvoltagedrive,easilydesigneddrivecircuits,easytoparallel. Applications Interfacing,switching.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

N-channelMOSFET

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Easilydesigneddrivecirduits. 5)Easytoparallel. Applications Interfacing,switching(30V,100mA)

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

N-channelMOSFET

FEATURES ●Lowon-resistance ●Fastswitchingspeed ●Lowvoltagedrivemakesthisdeviceidealforportableequipment ●Easilydesigneddrivecircuits ●Easytoparallel

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

N-ChannelPOWERMOSFET

Description: *Lowon-resistance. *Fastswitchingspeed. *Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. *Easilydesigneddrivecircuits. *Easytoparallel. Features: *SimpleDriveRequirement *SmallPackageOutline

WEITRONWEITRON

威堂電子科技

WEITRON

SOT-323Plastic-EncapsulateMOSFETS

FEATURES Lowon-resistance Fastswitchingspeed Lowvoltagedrivemakesthisdeviceidealforportableequipment Easilydesigneddrivecircuits Easytoparallel

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

WILLAS

N-ChannelPlastic-EncapsulateTransistor

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •LowON-Resistance •Lowvoltagedrivemakesthisdeviceidealforportableequipment •FastSwitchingSpeed •Easilydesigneddrivecircuits •Easytoparallel •AvailableinLead

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

N-ChannelMOSFET

■Features ●Lowon-resistance. ●Fastswitchingspeed. ●Lowvoltagedrive(2.5V)makesthis deviceidealforportableequipment. ●Easilydesigneddrivecircuits. ●Easytoparallel.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

N-channelMOSFET

SOT-523Plastic-EncapsulateMOSFETS FEATURE ●Lowon-resistance ●Fastswitchingspeed ●Lowvoltagedrivemakesthisdeviceidealfor Portableequipment ●Easilydesigneddrivecircuits ●Easytoparallel APPLICATION ●Interfacing,Switching

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

2.5VDriveNchMOSFET

Smallswitching(30V,0.1A) Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Easilydesigneddrivecircuits. 5)Easytoparallel. Applications Interfacing,switching(30V,100mA) Structure S

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

N-channelMOSFET

N-ChannelFieldEffectTransistor Features ●Lowon-resistance. ●Fastswitchingspeed. ●Lowvoltagedrive(2.5V)makesthis deviceidealforportableequipment. ●Easilydesigneddrivecircuits. ●Easytoparallel. Applications ●Interfacing,switching

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

Smallswitching(30V,0.1A)

Smallswitching(30V,0.1A) Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Easilydesigneddrivecircuits. 5)Easytoparallel. Applications Interfacing,switching(30V,100mA) Structure S

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

N-Channel30-V(D-S)MOSFET

zFeatures 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. 6)ESDprotected2KVHBM zApplications Interfacing,switching(30V,100mA)

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓锋半导体深圳市拓锋半导体科技有限公司

TUOFENG

SOT-523Plastic-EncapsulateMOSFETS

FEATURE Lowon-resistance Fastswitchingspeed Lowvoltagedrivemakesthisdeviceidealfor Portableequipment Easilydesigneddrivecircuits Easytoparallel

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

2.5VDriveNchMOSFET

Features 1)High-speedswitching. 2)Lowvoltagedrive(2.5Vdrive). 3)Drivecircuitscanbesimple. 4)Paralleluseiseasy.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

2.5VDriveNchMOSFET

Smallswitching(30V,0.1A) Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Easilydesigneddrivecircuits. 5)Easytoparallel. Applications Interfacing,switching(30V,100mA) Structure S

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

NCHANNELMOSTYPE(FMTUNER,VHFRFAMPLIFIERAPPLICATIONS)

FMTuner,VHFRFAmplifierApplications Lowreversetransfercapacitance:Crss=0.035pF(typ.) Lownoisefigure:NF=1.7dB(typ.) Highpowergain:Gps=28dB(typ.) Recommendoperationvoltage:5~15V

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconN-ChannelPowerF-MOSFET

■Features ●Avalancheenergycapacityguaranteed ●High-speedswitching ●LowON-resistance ●Nosecondarybreakdown ●Low-voltagedrive ●Highelectrostaticbreakdownvoltage ■Applications ●Contactlessrelay ●Divingcircuitforasolenoid ●Drivingcircuitforamotor

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconN-ChannelPowerF-MOSFET

Features Avalancheenergycapacityguaranteed High-speedswitching LowON-resistance Nosecondarybreakdown Low-voltagedrive Highelectrostaticbreakdownvoltage

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SiliconN-ChannelPowerF-MOSFET

■Features ●Avalancheenergycapacityguaranteed ●High-speedswitching ●LowON-resistance ●Nosecondarybreakdown ●Low-voltagedrive ●Highelectrostaticbreakdownvoltage ■Applications ●Contactlessrelay ●Divingcircuitforasolenoid ●Drivingcircuitforamotor

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconN-ChannelPowerF-MOSFET

■Features ●Avalancheenergycapacityguaranteed ●High-speedswitching ●LowON-resistance ●Nosecondarybreakdown ●Low-voltagedrive ●Highelectrostaticbreakdownvoltage ■Applications ●Contactlessrelay ●Divingcircuitforasolenoid ●Drivingcircuitfor

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconN-ChannelPowerF-MOSFET

Features ●Avalancheenergycapacityguaranteed ●High-speedswitching ●LowON-resistance ●Nosecondarybreakdown ●Low-voltagedrive ●Highelectrostaticbreakdownvoltage

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=20A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SiliconN-ChannelPowerF-MOSFET

Features ●Avalancheenergycapacityguaranteed ●High-speedswitching ●LowON-resistance ●Nosecondarybreakdown ●Low-voltagedrive ●Highelectrostaticbreakdownvoltage

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SiliconN-ChannelPowerF-MOSFET

■Features ●Avalancheenergycapacityguaranteed ●High-speedswitching ●LowON-resistance ●Nosecondarybreakdown ●Low-voltagedrive ●Highelectrostaticbreakdownvoltage ■Applications ●Contactlessrelay ●Divingcircuitforasolenoid ●Drivingcircuitfor

PanasonicPanasonic Corporation

松下松下电器

Panasonic

2SK30产品属性

  • 类型

    描述

  • 型号

    2SK30

  • 制造商

    ROHM

  • 制造商全称

    Rohm

  • 功能描述

    Small switching(30V, 0.1A)

更新时间:2024-5-1 8:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HIT
22+
35000
OEM工厂,中国区10年优质供应商!
ROHM
22+
SOT523
96000
原装进口现货假一赔十
TOSHIBA/东芝
2022+
SC-62
7600
原厂原装,假一罚十
ROHM/罗姆
22+
SOT323
60620
6380
UTC/友顺
20+
SOT-23
880000
明嘉莱只做原装正品现货
TOS
19+
OT92
30000
绝对原装现货,价格优惠。可17税
CJ
22+
SOD-523
19415
ROHM
22+
N/A
232
只做原装 正品
CJ/长电
21+
SOT523
704
原装现货假一赔十
TOSHIBA/东芝
SC-62
6000

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