位置：首页 > IC中文资料第1382页 > 2SK1530-Y(F)
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
High-PowerAmplifierApplication High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  |   | |
High-PowerAmplifierApplication High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
High-PowerAmplifierApplication High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
NCHANNELMOSTYPE(HIGHPOWERAMPLIFIERAPPLICATION) 文件：564.12 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
High-PowerAmplifierApplication 文件：388.89 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
2SK1530-Y(F)产品属性
- 类型
描述
- 型号
2SK1530-Y(F)
- 功能描述
MOSFET MOSFET N-CH 200V 12A TO-3PL
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
2018+ |
TO-3P |
365000 |
TOSHIBA代理分销商绝对进口原装现货假一罚十 |
|||
TOSHIBA/东芝 |
10+ |
TO-3P |
456200 |
全新原装现货 |
|||
TOSHIBA/东芝 |
23+ |
TO3PL |
50000 |
全新原装正品现货,支持订货 |
|||
东芝 |
TO3PL |
608900 |
原包原标签100%进口原装常备现货! |
||||
NEC |
08PB |
60000 |
|||||
TOSHIBA |
23+ |
TO-3PL |
9526 |
||||
TOSHIBA/东芝 |
24+ |
TO3PL |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
TOSHIBA |
2022 |
TO-3PL |
6800 |
原厂原装正品,价格超越代理 |
|||
SONY |
2017+ |
TO3PL |
35685 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
TOSHIBA |
2339+ |
TO-3P(L)/Out |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
2SK1530-Y(F)芯片相关品牌
2SK1530-Y(F)规格书下载地址
2SK1530-Y(F)参数引脚图相关
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- 5000
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2SK1530-Y(F)数据表相关新闻
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2019-10-30
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