型号 功能描述 生产厂家&企业 LOGO 操作
2SJ605

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.0V,ID=–33A) •Lowinputcapacitance Ci

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SJ605

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ605

MOSFieldEffectTransistors

Features ●Superlowon-stateresistance: RDS(on)1=20mMAX.(VGS=-10V,ID=-33A) RDS(on)2=31mMAX.(VGS=-4.0V,ID=-33A) ●Lowinputcapacitance Ciss=4600pFTYP.(VDS=-10V,VGS=0A) ●Built-ingateprotectiondiode

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.0V,ID=–33A) •Lowinputcapacitance Ci

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.0V,ID=–33A) •Lowinputcapacitance Ci

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.0V,ID=–33A) •Lowinputcapacitance Ci

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-65A ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

MOSFIELDEFFECTTRANSISTOR

文件:220 Kbytes Page:10 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SJ605产品属性

  • 类型

    描述

  • 型号

    2SJ605

  • 制造商

    KEXIN

  • 制造商全称

    Guangdong Kexin Industrial Co.,Ltd

  • 功能描述

    MOS Field Effect Transistors

更新时间:2024-5-31 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
TO220
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
RENESAS/Renesas Electronics Am
21+
TO-220
3806
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS
2011+
TO-220
3685
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
1822+
TO-262
9852
只做原装正品假一赔十为客户做到零风险!!
RENESAS
21+
TO-220
3806
原装现货假一赔十
RENESAS/瑞萨
23+
TO-220
90000
只做原厂渠道价格优势可提供技术支持
Renesas(瑞萨)
23+
原厂封装
32078
10年以上分销商,原装进口件,服务型企业
RENESAS
TO-220
37526
只做原装货值得信赖
NEC
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
NEC
06+
SOT263
1500
全新原装,价格优势

2SJ605芯片相关品牌

  • ARCH
  • CEL
  • COOPER
  • DGNJDZ
  • Ecliptek
  • EDAL
  • E-SWITCH
  • FCI-CONNECTOR
  • Heyco
  • NEXPERIA
  • SECELECTRONICS
  • TRSYS

2SJ605数据表相关新闻