位置：首页 > IC中文资料第1185页 > 2SJ539-E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ539-E | SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.16Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.16Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPChannelMOSFETHighSpeedPowerSwitching SiliconPChannelMOSFETHighSpeedPowerSwitching Features ·Lowon-resistance RDS(on)=0.16Wtyp. ·Lowdrivecurrent ·4Vgetedrivedevices ·Highspeedswitching | HitachiHitachi, Ltd. 日立公司 |  | |
2SJ539-E产品属性
- 类型
描述
- 型号
2SJ539-E
- 制造商
Renesas Electronics Corporation
- 制造商
Renesas Electronics Corporation
- 功能描述
Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) TO-220AB Box
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
R |
2020+ |
TO220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
SONY |
02+ |
TO-3P |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HIT |
22+ |
NA |
4000 |
||||
SONY/索尼 |
23+ |
NA/ |
3986 |
原装现货,当天可交货,原型号开票 |
|||
vishay |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
VBsemi/台湾微碧 |
23+ |
TO220 |
30000 |
代理全新原装现货,价格优势 |
|||
VBsemi/台湾微碧 |
21+ |
TO220 |
5772 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HIT |
23+ |
TO252 |
5000 |
原装正品,假一罚十 |
|||
HIT |
05+ |
TO-220AB |
20000 |
||||
RENESAS |
2020+ |
TO-220 |
32630 |
公司代理品牌,原装现货超低价清仓! |
2SJ539-E芯片相关品牌
2SJ539-E规格书下载地址
2SJ539-E参数引脚图相关
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2019-10-30
DdatasheetPDF页码索引
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