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2SJ50价格
参考价格：￥0.5200
型号：2SJ501 品牌：SANYO 备注：这里有2SJ50多少钱，2024年最近7天走势，今日出价，今日竞价，2SJ50批发/采购报价，2SJ50行情走势销售排行榜，2SJ50报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ50 | LOWFREQUENCYPOWERAMPLIFIER SILICONP-CHANNELMOSFET LOWFREQUENCYPOWERAMPLIFIER ComplementaryPairwith2SK133,2SK134,2SK135 | HitachiHitachi, Ltd. 日立公司 |  |   |
Ultrahigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features ·LowON-resistance. ·Ultrahigh-speedswitching. ·2.5Vdrive. | SANYOSanyo 三洋三洋电机株式会社 |  | | |
Ultrahigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features ·LowON-resistance. ·Ultrahigh-speedswitching. ·4Vdrive. | SANYOSanyo 三洋三洋电机株式会社 | | | |
DC/DCConverterApplications DC/DCConverterApplications Features ·LowONresistance. ·Ultrahigh-speedswitching. ·4Vdrive. | SANYOSanyo 三洋三洋电机株式会社 | | | |
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS(on)=0.065Ωtyp.(atVGS=–10V,ID=–5A) •Lowdrivecurrent •Highspeedswitching •4Vgatedrivedevices. | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconPChannelMOSFET *Lowon-resistance RDS(on)=0.065Ωtyp.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPChannelMOSFET *Lowon-resistance RDS(on)=0.065Ωtyp.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS(on)=0.065Ωtyp.(atVGS=–10V,ID=–5A) •Lowdrivecurrent •Highspeedswitching •4Vgatedrivedevices. | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconPChannelMOSFET *Lowon-resistance RDS(on)=0.065Ωtyp.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HightSpeedPowerSwitching Features Lowon-resistance RDS(on)=0.065typ.(atVGS=-10V,ID=-5A) Lowdrivecurrent Highspeedswitching 4Vgatedrivedevices. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | | |
SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS(on)=0.065Ωtyp.(atVGS=–10V,ID=–5A) •Lowdrivecurrent •Highspeedswitching •4Vgatedrivedevices. | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconPChannelMOSFET *Lowon-resistance RDS(on)=0.065Ωtyp.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPChannelMOSFET *Lowon-resistance RDS(on)=0.065Ωtyp.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
PCHANNELMOSTYPE(HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATOINS) ChopperRegulator,DC−DCConverterandMotorDriveApplications 4Vgatedrive Lowdrain−sourceONresistance:RDS(ON)=0.5Ω(typ.) Highforwardtransferadmittance:|Yfs|=1.0S(typ.) Lowleakagecurrent:IDSS=−100µA(max)(VDS=−60V) Enhancement−mode:Vth=−0.8~ | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  | | |
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
PCHANNELMOSTYPE(HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS) ChopperRegulator,DC−DCConverterandMotorDriveApplications 4Vgatedrive Lowdrain−sourceONresistance:RDS(ON)=1.35Ω(typ.) Highforwardtransferadmittance:|Yfs|=0.7S(typ.) Lowleakagecurrent:IDSS=−100µA(VDS=−100V) Enhancement−mode:Vth=−0.8~−2.0 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
PCHANNELMOSTYPE(HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONERTORANDMOTORDRIVEAPPLICATIONS) ChopperRegulator,DC−DCConverterandMotorDriveApplications 4Vgatedrive Lowdrain−sourceONresistance:RDS(ON)=1.35Ω(typ.) Highforwardtransferadmittance:|Yfs|=0.7S(typ.) Lowleakagecurrent:IDSS=−100µA(max)(VDS=−100V) Enhancement−mode:Vth=−0. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
SiliconPChannelMOSFET 文件：108.55 Kbytes Page：10 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPChannelMOSFET 文件：117.47 Kbytes Page：11 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPChannelMOSFET 文件：108.68 Kbytes Page：10 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
P-ChannelMOSFET 文件：1.27354 Mbytes Page：4 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
P-Channel30-V(D-S)MOSFET 文件：1.01578 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
ChopperRegulator,DC−DCConverterandMotorDriveApplications 文件：157.32 Kbytes Page：3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
ChopperRegulator,DC−DCConverterandMotorDriveApplications 文件：157.32 Kbytes Page：3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
ChopperRegulator,DC−DCConverterandMotorDriveApplications 文件：224.22 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
ChopperRegulator,DC?묭CConverterandMotorDrive 文件：220.67 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
ChopperRegulator,DC−DCConverterandMotorDriveApplications 文件：224.22 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
ChopperRegulator,DC?묭CConverterandMotorDrive 文件：220.67 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
ChopperRegulator,DC?묭CConverterandMotorDrive 文件：161.08 Kbytes Page：3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
ChopperRegulator,DC−DCConverterandMotorDriveApplications 文件：157.98 Kbytes Page：3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
ChopperRegulator,DC−DCConverterandMotorDriveApplications 文件：157.98 Kbytes Page：3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
ChopperRegulator,DC?묭CConverterandMotorDrive 文件：161.08 Kbytes Page：3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
2SJ50产品属性
- 类型
描述
- 型号
2SJ50
- 制造商
Renesas Electronics
- 功能描述
Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-220FM Box Tray
- 制造商
Renesas
- 功能描述
Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-220FM Box
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
22+ |
TO252 |
3000 |
原厂原装,价格优势!13246658303 |
|||
TOSHIBA |
11+ |
1384 |
原装正品长期供货，如假包赔包换 徐小姐13714450367 |
||||
RENESAS |
2018+ |
TO-263 |
11256 |
只做进口原装正品!假一赔十! |
|||
TOSHIBA |
22+ |
SOT89 |
5000 |
||||
TOSHIBA |
22+ |
SOT89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
SONYO |
17+ |
SOT23 |
9988 |
只做原装进口,自己库存 |
|||
HIT |
2339+ |
SOT252 |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
日立 |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
||||
TOSHIBA/东芝 |
2022 |
SOT89 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
HITACHI |
16+ |
TO-3 |
100 |
原装现货假一罚十 |
2SJ50芯片相关品牌
2SJ50规格书下载地址
2SJ50参数引脚图相关
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- 2SJ506S
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2SJ50数据表相关新闻
2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E原装正品现货供应
2024-3-232SD669AL-TO92NLB-C-TG_UTC代理商
2SD669AL-TO92NLB-C-TG_UTC代理商
2023-2-172SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-82SD669AL-TO126T-D-TG_UTC代理商
2SD669AL-TO126T-D-TG_UTC代理商
2023-2-22SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-30
DdatasheetPDF页码索引
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