2SD2686是一款高性能的功率晶体管，适用于多种应用场景。 产品参数： 最大功率：150W 最大电压：80V 最大电流：15A 封装形式：TO-3P SD2686具有良好的散热性能。相比之下，竞品型号的最大功率、电压和电流均不及2SD2686。 产品优势： 接下来，我们来比较2SD2686与竞品的优势。 首先是性能方面，2SD2686具有更高的最大功率和电压，能够满足更高的功率需求。 其次是封装形式，TO-3P封装具有更好的散热性能，能够更好地保护晶体管。 最后是价格方面，2SD2686的价格相对较低，具有更好的性价比。 应用场景： 针对不同的应用场景，2SD2686也有着广泛的应用。 例如

NPNTripleDiffusedPlanarSiliconDarlingtonTransistorDriverApplications

NPNTripleDiffusedPlanarSiliconDarlingtonTransistor DriverApplications Features •HighDCcurrentgain. •LargecurrentcapacityandwideASO. Applications •Motordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrol.

HIGHPOWERSWITCHINGAPPLICATIONSHAMMERDRIVEPULSEMOTORDRIVEAPPLICATIONS

High-PowerSwitchingApplications HammerDrive,PulseMotorDriveApplications •HighDCcurrentgain:hFE=2000(min) •Lowsaturationvoltage:VCE(sat)=1.5V(max)

ForPoweramplification(100V,8A)

PowerTransistor(100V,8A) Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-inresistorbetweenbaseandemitter. 3)Built-indamperdiode. 4)Complementsthe2SB1668.

LOWFREQUENCYPOWERAMPLIFIER

[USHA] LOWFREQUENCYPOWERAMPLIFIER •ComplementtoKSA643 •CollectorDissipatinPc=500mW

PowerTransistor

Features 1)Lowsaturationvoltage,typicallyVCE(sat)=0.3VatIC/IB=4/0.4A. 2)ExcellentDCcurrentgaincharacteristics. 3)PC=300W(TC=25°C) 4)WideSOA(safeoperatingarea). 5)Complementsthe2SB1672.

ForMotor/Relaydrive(120V,6A)

ForMotor/Relaydrive(120V,6A) Structure NPNSiliconEpitaxialPlanarTransistor(Darlingtonconnection) Features 1)Darlingtonconnection,highhFE. 2)Resistorinbetweenbase-emitter. 3)Built-indamperdiode. Applications Relaydrive Motordrive

SiliconNPNepitaxialplanertype(Forlow-frequencyamplification)

SiliconNPNepitaxialplanartype Forlow-frequencydriveramplification ■Features •HighforwardcurrenttransferratiohFE •Lowcollector-emittersaturationvoltageVCE(sat) •Highemitter-basevoltage(Collectoropen)VEBO

SiliconNPNepitaxialplanertype(Forlow-frequencyamplification)

SiliconNPNepitaxialplanartype Forlow-frequencydriveramplification ■Features •HighforwardcurrenttransferratiohFE •Lowcollector-emittersaturationvoltageVCE(sat) •Highemitter-basevoltage(Collectoropen)VEBO

SiliconNPNepitaxialplanartypeForlow-frequencydriveramplification

SiliconNPNepitaxialplanartype Forlow-frequencydriveramplification ■Features •HighforwardcurrenttransferratiohFE •Lowcollector-emittersaturationvoltageVCE(sat) •Highemitter-basevoltage(Collectoropen)VEBO

Forlow-frequencyamplification

SiliconNPNepitaxialplanartype Forlow-frequencyamplification ■Features •LowONresistanceRon •S-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking.

SiliconNPNepitaxialplanartypeForlow-frequencyamplification

SiliconNPNepitaxialplanartype Forlow-frequencyamplification ■Features •Twoelementsincorporatedintoonepackage(Emitter-coupledtransistors) •Reductionofthemountingareaandassemblycostbyonehalf

ColorTVHorizontalDeflectionOutputApplications

•Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. •On-chipdamperdiode.

ColorTVHorizontalDeflectionOutputApplications

ColorTVHorizontalDeflection OutputApplications Features •Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. •On-chipdamperdiode.

ColorTVHorizontalDeflectionOutputApplications

ColorTVHorizontalDeflection OutputApplications Features •Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. •On-chipdamperdiode.

ColorTVHorizontalDeflectionOutputApplications

Features •Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. •On-chipdamperdiode.

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PMLpackage ·Highspeed ·Highbreakdownvoltage ·Highreliability ·Built-indamperdiode APPLICATIONS ·ColorTVhorizontaldeflectionoutput

120V/2ADriverApplications

120V/2ADriverApplications Features ·Darlingtonconnection ·HighDCcurrentgain. ·DCcurrentgainislessaffectedbytemperature. Applications ·Motordrivers,hammerdrivers,andrelaydrivers.

TOSHIBATransistorSiliconNPNTripleDiffusedMesaType

HorizontalDeflectionOutputforColorTV,DigitalTV. HighSpeedSwitchingApplications. ●Highvoltage:VCBO=1700V ●Lowsaturationvoltage:VCE(sat)=5V(max) ●Highspeed:tf=0.8µs(max)

140V/12A,AF60WOutputApplications

Features •WideASObecauseofon-chipballastresistance. •GooddependenceoffToncurrentandgoodHFcharacteristic.

SiliconNPNTripleDiffusedPlanarTransistor(Complementtotype2SB1685)

SiliconNPNTripleDiffusedPlanarTransistor(Complementtotype2SB1685) Application:Audio,SeriesRegulatorandGeneralPurpose

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=110V(Min) •HighDCCurrentGain- :hFE=5000(Min.)@(IC=5A,VCE=4V) •LowCollectorSaturationVoltage- :VCE(sat)=2.5V(Max)@(IC=5A,IB=5mA)B •ComplementtoType2SB1687 APPLICATIONS •Designedfora

SiliconNPNTripleDiffusedPlanarTransistor(Complementtotype2SB1687)

SiliconNPNTripleDiffusedPlanarTransistor(Complementtotype2SB1687) Application:Audio,SeriesRegulatorandGeneralPurpose

SILICONPNPEPITAXIALPLANARTRANSISTOR

SiliconPNPTripleDiffusedPlanarTransistor(Complementtotype2SD2642) Application:Audio,SeriesRegulatorandGeneralPurpose

SiliconNPNTripleDiffusedPlanarTransistor(Complementtotype2SB1687)

SiliconNPNTripleDiffusedPlanarTransistor(Complementtotype2SB1687) Application:Audio,SeriesRegulatorandGeneralPurpose

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighBreakdownVoltage- :VCBO=1500V(Min) ·HighSwitchingSpeed ·HighReliability ·Built-inDamperDiode APPLICATIONS ·ColorTVhorizontaldeflectionoutputapplications.

ColorTVHorizontalDeflectionOutputApplications

NPNTripleDiffusedPlanarSiliconTransistor Features •Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. •On-chipdamperdiode.

ColorTVHorizontalDeflectionOutputApplications

NPNTripleDiffusedPlanarSiliconTransistor. Features •Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess.

ColorTVHorizontalDeflectionOutputApplications

ColorTVHorizontalDeflectionOutputApplications Features •Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess.

ColorTVHorizontalDeflectionOutputApplications

Features •Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess.

ColorTVHorizontalDeflectionOutputApplications

NPNTripleDiffusedPlanarSiliconTransistor Features •Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess.

Generalpurposeamplification(12V,1.5A)

Features 1)Acollectorcurrentislarge. 2)Collectorsaturationvoltageislow. VCE(sat)≤200mVAtIC=500mA/IB=25mA Application Lowfrequencyamplifier

Lowfrequencyamplifier

Features 1)Collectorcurrentislarge. 2)VCE(sat)≦180mVatIC=1A/IB=50mA 3)ComplementaryPNPTypes:2SB1690 Application LOWFREQUENCYAMPLIFIER

Lowfrequencyamplifier

Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤180mVAtIC=1A/IB=50mA Application Lowfrequencyamplifier Driver

NPN150mA50VMutingTransistors

Features 1)HighDCcurrentgain. 2)Highemitter-basevoltage.(VCBO=12V) 3)Lowsaturationvoltage. (Typ.VCE(sat)=0.3VatIC/IB=50mA/5mA)

GeneralPurposeTransistor(50V,0.15A)

Features 1)HighDCcurrentgain. 2)Highemitter-basevoltage.(VCBO=12V) 3)Lowsaturationvoltage. (Typ.VCE(sat)=0.3VatIC/IB=50mA/5mA)

GeneralpurposeTransistor(50V,150mA)

Features 1)HighDCcurrentgain. 2)Highemitter-basevoltage.(VCBO=12V) 3)Lowsaturationvoltage. (Max.VCE(sat)=300mVatIC/IB=50/5mA) Application LOWFREQUENCYAMPLIFIER,DRIVER

SiliconNPNEpitaxialPlanerLowFrequencyPowerAmplifier

Features •Smallsizepackage:MPAK(SC–59A) •LargeMaximumcurrent:IC=1A •Lowcollectortoemittersaturationvoltage:VCE(sat)=0.3Vmax.(atIC/IB=0.5A/0.05A) •Highpowerdissipation:PC=800mW(whenusingaluminaceramicboard(25x60x0.7mm)) •Complementarypairwith2S

SiliconNPNEpitaxialPlanerLowFrequencyPowerAmplifier

Features •Smallsizepackage:MPAK(SC–59A) •LargeMaximumcurrent:IC=1A •Lowcollectortoemittersaturationvoltage:VCE(sat)=0.3Vmax.(atIC/IB=0.5A/0.05A) •Highpowerdissipation:PC=800mW(whenusingaluminaceramicboard(25x60x0.7mm)) •Complementarypairwith2S

Generalpurposeamplification(30V,1A)

Features 1)Acollectorcurrentislarge 2)Collector-Emittersaturationvoltageislow. VCE(sat)≦350mVatIC=500mA/IB=25mA Application LOWFREQUENCYAMPLIFIER,DRIVER

NPN1A30VLowFrequencyAmplifierTransistors

Features 1)Acollectorcurrentislarge 2)Collector-Emittersaturationvoltageislow. VCE(sat)≦350mVatIC=500mA/IB=25mA Application LOWFREQUENCYAMPLIFIER,DRIVER

Lowfrequencyamplifier

Features 1)Collectorcurrentislarge. 2)VCE(sat)≦350mVatIC=1A/IB=50mA 3)ComplementaryPNPTypes:2SB1695 Application LOWFREQUENCYAMPLIFIER

Lowfrequencyamplifier

Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤350mVAtIC=1A/IB=50mA Application Lowfrequencyamplifier Driver

Lowfrequencyamplifier

Features 1)Acollectorcurrentislarge. 2)VCE(sat)≤350mVAtIC=1A/IB=50mA Application Lowfrequencyamplifier Driver

Lowfrequencyamplifiertransistor(12V,2A)

Features LowVCE(sat)≦180mV(IC/IB=1A/50mA) Application LOWFREQUENCYAMPLIFIER

Lowfrequencyamplifier

Features 1)SuitableforMiddlePowerDriver 2)ComplementaryPNPTypes:2SB1698 3)LowVCE(sat) VCE(sat)=0.35V(Max.)(IC/IB=1A/50mA) 4)LeadFree/RoHSCompliant. Applications Motordriver,LEDdriver Powersupply

Lowfrequencyamplifier

Features 1)Acollectorcurrentislarge. 2)VCE(sat):max.250mVAtlc=1.5A/lB=30mA Application Lowfrequencyamplifier Driver

Lowfrequencyamplifier

Features 1)Collectorcurrentislarge.(2A) 2)VCE(sat)≦370mVatIC=1.5A/IB=75mA 3)ComplementaryPNPTypes:2SB1706 lApplication LOWFREQUENCYAMPLIFIER

Lowfrequencyamplifier

Features 1)Collectorcurrentislarge.(4A) 2)VCE(sat)≦250mVatIC=2A/IB=40mA 3)ComplementaryPNPTypes:2SB1707 Application LOWFREQUENCYAMPLIFIER

Lowfrequencyamplifier

Features 1)Acollectorcurrentislarge.(3A) 2)VCE(sat):max.250mVAtIC=1.5A/IB=30mA Application Lowfrequencyamplifier Driver

Generalpurposeamplification(12V,1.5A)

Features 1)Acollectorcurrentislarge. 2)Collectorsaturationvoltageislow. VCE(sat)≦200mVatIC=500mA/IB=25mA Application LOWFREQUENCYAMPLIFIER

Generalpurposeamplification(30V,1A)

Features 1)Acollectorcurrentislarge. 2)Collectorsaturationvoltageislow. VCE(sat):max.350mVatIC=500mA/IB=25mA Application LOWFREQUENCYAMPLIFIER

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

iscSiliconNPNPowerTransistor

DESCRIPTION •Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). APPLICATIONS •DesignedforColorTVHorizontalDeflectionOutputApplications.

ColorTVHorizontalDeflectionOutputApplications

Features •Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess.

SiliconNPNEpitaxialType(DarlingtonPowerTransistor)

MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA) •Zenerdiodeincludedbetweencollectorandbase

SiliconNPNtransistorinaTO-220FPlasticPackage.

文件：772.78 Kbytes Page：6 Pages

SiliconNPNTripleDiffusedType(Darlington)

文件：141.56 Kbytes Page：5 Pages

SiliconNPNTripleDiffusedType(Darlington)

文件：141.56 Kbytes Page：5 Pages

封装/外壳：SC-89，SOT-490 包装：管件 描述：TRANS NPN 100V 0.02A SSMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个