2SD25晶体管资料

  • 2SD25别名:2SD25三极管、2SD25晶体管、2SD25晶体三极管

  • 2SD25生产厂家:日本日电公司

  • 2SD25制作材料:Ge-NPN

  • 2SD25性质:低频或音频放大 (LF)

  • 2SD25封装形式:直插封装

  • 2SD25极限工作电压:25V

  • 2SD25最大电流允许值:0.1A

  • 2SD25最大工作频率:8MHZ

  • 2SD25引脚数:3

  • 2SD25最大耗散功率:0.11W

  • 2SD25放大倍数

  • 2SD25图片代号:C-47

  • 2SD25vtest:25

  • 2SD25htest:8000000

  • 2SD25atest:.1

  • 2SD25wtest:.11

  • 2SD25代换 2SD25用什么型号代替:AC127,AC176,AC187,2N1302,2SD30,3BX31B,

2SD25价格

参考价格:¥1.3458

型号:2SD250400A 品牌:Panasonic 备注:这里有2SD25多少钱,2024年最近7天走势,今日出价,今日竞价,2SD25批发/采购报价,2SD25行情走势销售排行榜,2SD25报价。
型号 功能描述 生产厂家&企业 LOGO 操作

NPNTRIPLEDIFFUSEDMESATYPE(HORIZONTALDEFLECTIONOUTPUTFORCOLORTVs)

HORIZONTALDEFLECTIONOUTPUTFORCOLORTV ●HighVoltage:VCBO=1500V ●LowSaturationVoltage:VCE(sat)=3V(Max.) ●HighSpeed:tf=0.35µs(Typ.) ●CollectorMetal(Fin)isFullyCoveredwithMoldResin.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3P(H)ISpackage •Highspeed •Highvoltage •Lowsaturationvoltage APPLICATIONS •HorizontaldeflectionoutputforcolorTV

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNepitaxialplanartype

SiliconNPNepitaxialplanartype Forlow-frequencypoweramplification ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •LargecollectorcurrentIC

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highvoltage,highspeed APPLICATIONS •ForcolorTVhorizontaldeflectionoutputapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION •HighBreakdownVoltage-:VCBO=1700V(Min) •HighSwitchingSpeed •LowSaturationVoltage •Built-inDamperDiode APPLICATIONS •Designedforhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TOSHIBATRANSTORSILICONNPNTRIPLEDIFFUSEDTYPE

AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NPNTRIPLEDIFFUSEDTYPE(HIGHPOWERSWITCING,HAMMERDRIVE,PULSEMOTORDRIVEAPPLICATIONS)

HighPowerSwitchingApplications HammerDrive,PulseMotorDriveApplications •HighDCcurrentgain:hFE=2000(min)(VCE=3V,IC=3A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=3A) •Complementaryto2SB1641

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNPNtriplediffusionplanartype(Forpoweramplificationwithhighforwardcurrenttransferratio)

SiliconNPNtriplediffusionplanartype Forpoweramplificationwithhighforwardcurrenttransferratio ■Features ●HighfowardcurrenttransferratiohFE ●SatisfactorylinearityoffowardcurrenttransferratiohFE ●Full-packpackagewhichcanbeinstalledtotheheatsinkwi

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNepitaxialplanartype(Forpoweramplificationwithhighforwardcurrenttransferratio)

SiliconNPNepitaxialplanartype Forpoweramplificationwithhighforwardcurrenttransferratio ■Features •HighforwardcurrenttransferratiohFE •SatisfactorylinearityofforwardcurrenttransferratiohFE •Full-packpackagewhichcanbeinstalledtotheheatsinkwithonescrew

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNtriplediffusionplanertypeDarlington(Forpoweramplification)

Forpoweramplification ■Features •HighforwardcurrenttransferratiohFE •Allowingsupplywiththeradialtaping •LowcollectortoemittersaturationvoltageVCE(sat):

PanasonicPanasonic Corporation

松下松下电器

Panasonic

NPNTRIPLEDIFFUSEDTYPE(POWERAMPLIFIERAPPLICATIONS)

POWERAMPLIFIERAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

iscSiliconNPNPowerTransistor

DESCRIPTION ·LowCollectorSaturationVoltage- :VCE(sat)=1.0(Max)@IC=2.5A ·HighPowerDissipation- :PC=25W@TC=25℃ APPLICATIONS ·Designedforpoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNEPITAXIALTYPE(MICROMOTORDRIVE,HAMMERDRIVE,SWITCHINGAPPLICATIONS)

SwitchingApplications MicroMotorDrive,HammerDriveApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.2V(max) (IC=0.7A,VBH=4.2V) •Zenerdiodeincludedbetweencollector

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

MediumPowerTransistor(25V,1.2A)

Features 1)HighDCcurrentgain. 2)Highemitter-basevoltage.(VEBO=12V) 3)Lowsaturationvoltage.(Max.VCE(sat)=0.3VatIC/IB=500mA/10mA)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

MediumPowerTransistor

■Features ●HighDCcurrentgain. ●Highemitter-basevoltage. ●Lowsaturationvoltage.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

MEDIUMPOWERTRANSISTOR(25V,1.2V),GENERALPURPOSETRANSISTOR(50V,0.15A)

MEDIUMPOWERTRANSISTOR(25V,1.2V) GENERALPURPOSETRANSISTOR(50V,0.15A)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

MediumPowerTransistor(25V,1.2A)

Features 1)HighDCcurrentgain. 2)Highemitter-basevoltage.(VEBO=12V) 3)Lowsaturationvoltage.(Max.VCE(sat)=0.3VatIC/IB=500mA/10mA)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SiliconNPNtriplediffusionplanertypeDarlington(Forpoweramplification)

SiliconNPNtriplediffusionplanertypeDarlington Forpoweramplification ■Features •HighforwardcurrenttransferratiohFE •Full-packpackagewhichcanbeinstalledtotheheatsinkwithonescrew

PanasonicPanasonic Corporation

松下松下电器

Panasonic

NPNTRIPLEDIFFUSEDMESATYPE(HORIZONTALDEFLECTIONOUTPUTFORCOLORTV)

HORIZONTALDEFLECTIONOUTPUTFORCOLORTV ●HighVoltage:VCBO=1500V ●LowSaturationVoltage:VCE(sat)=5V(Max.) ●HighSpeed:tf=0.3µs(Typ.) ●Bult-inDamperType ●CollectorMetal(Fin)isFullyCoveredwithMoldResin.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3P(H)ISpackage •Highvoltage;highspeed •Lowsaturationvoltage •Bult-indamperdiode APPLICATIONS •HorizontaldeflectionoutputforcolorTV

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3P(H)ISpackage •Highvoltage;highspeed •Lowsaturationvoltage •Bult-indamperdiode APPLICATIONS •HorizontaldeflectionoutputforcolorTV

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNtriplediffusionplanartype(Forpoweramplificationwithhighforwardcurrenttransferratio)

SiliconNPNtriplediffusionplanartype Forpoweramplificationwithhighforwardcurrenttransferratio ■Features •HighforwardcurrenttransferratiohFE •SatisfactorylinearityofforwardcurrenttransferratiohFE •Allowingsupplywiththeradialtaping

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNtriplediffusionplanartype(Forpoweramplification)

Forpoweramplification ■Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●LowcollectortoemittersaturationvoltageVCE(sat) ●Full-packpackagewhichcanbeinstalledtotheheatsinkwithonescrew

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage:V(BR)CEO=80V(Min) ·LowCollectorSaturationVoltgae:VCE(sat)=0.7V(Max.)@IC=3A ·GoodLinearityofhFE APPLICATIONS ·Designedforpoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighBreakdownVoltage- :VCBO=1700V(Min) ·HighSwitchingSpeed ·LowSaturationVoltage ·Built-inDamperDiode APPLICATIONS ·DesignedforcolorTVhorizontaldeflectionapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNTRIPLEDIFFUSEDMESATYPE(HORIZONTALDEFLECTIONOUTPUTFORCOLORTV)

HORIZONTALDEFLECTIONOUTPUTFORCOLORTV

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NPNTRIPLEDIFFUSEDMESATYPE(HORIZONTALDEFLECTIONOUTPUTFORCOLORTV)

HORIZONTALDEFLECTIONOUTPUTFORCOLORTV

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighBreakdownVoltage- :VCBO=1700V(Min) ·HighSwitchingSpeed ·LowSaturationVoltage ·Built-inDamperDiode APPLICATIONS ·DesignedforcolorTVhorizontaldeflectionapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3P(H)ISpackage ·Highvoltage;highspeed ·Lowsaturationvoltage ·Bult-indamperdiode APPLICATIONS ·Horizontaldeflectionoutputforhighresolutiondisplay,colorTV ·Highspeedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SILICONNPNTRIPLEDIFFUSEDMESATYPE

DESCRIPTION HORIZONTALDEFLECTIONOUTPUTFORHIGHRESOLUTIONDISPLAY,COLORTVHIGHSPEEDSWITCHINGAPPLICATIONS

TGS

Tiger Electronic Co.,Ltd

TGS

NPNTRIPLEDIFFUSEDMESATYPE(HORIZONTALDEFLECTIONOUTPUTFORHIGHRESOLUTIONDISPLAY,COLORTV.HIGHSPEEDSWITCHINGAPPLICATIONS)

HORIZONTALDEFLECTIONOUTPUTFORHIGHESOLUTIONDISPLAY,COLORTV HIGHSPEEDSWITCHINGAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3P(H)ISpackage ·Highvoltage;highspeed ·Lowsaturationvoltage ·Bult-indamperdiode APPLICATIONS ·Horizontaldeflectionoutputforhighresolutiondisplay,colorTV ·Highspeedswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNepitaxialplanertype(Forpowerswitching)

Forpowerswitching ■Features •HighforwardcurrenttransferratiohFE •Allowingsupplywiththeradialtaping •LowcollectortoemittersaturationvoltageVCE(sat):

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNTripleDiffusedPlanarTransistor(SeriesRegulatorandGeneralPurpose)

SiliconNPNTripleDiffusedPlanarTransistor Application:SeriesRegulatorandGeneralPurpose

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·DARLINGTON APPLICATIONS ·Seriesregulatorandgeneralpurpose

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·DARLINGTON APPLICATIONS ·Seriesregulatorandgeneralpurpose

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=200V(Min) ·HighDCCurrentGain- :hFE=1500(Min.)@(IC=1A,VCE=5V) ·LowCollectorSaturationVoltage- :VCE(sat)=1.5V(Max)@(IC=1A,IB=5mA)B APPLICATIONS ·Designedforseriesregulatorandgene

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNTripleDiffusedPlanarTransistor(SeriesRegulatorandGeneralPurpose)

Application:SeriesRegulatorandGeneralPurpose

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken

iscSiliconNPNPowerTransistor

DESCRIPTION 0.NPNPowerTransistor 1.HighBreakdownVoltage:VCBO=1500V(Min) 2.HighSwitchingSpeed 3.LowSaturationVoltage 4.Built-inDamperDiode

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNTRIPLEDIFFUSEDMESATYPE(HORIZONTALDEFLECTIONOUTPUTFORCOLORTV)

ThisDeviceisHorizontalDeflectionOutputForColorTV.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·Complementtotype2SB1647 APPLICATIONS ·Audio,regulatorandgeneralpurpose

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·Complementtotype2SB1647 APPLICATIONS ·Audio,regulatorandgeneralpurpose

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNTripleDiffusedPlanarTransistor(Audio,SeriesRegulatorandGeneralPurpose)

SiliconNPNTripleDiffusedPlanarTransistor(Complementtotype2SB1647) Application:Audio,SeriesRegulatorandGeneralPurpose

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken

SiliconNPNTripleDiffusedPlanarTransistor(Audio,SeriesRegulatorandGeneralPurpose)

SiliconNPNTripleDiffusedPlanarTransistor(Complementtotype2SB1648) Application:Audio,SeriesRegulatorandGeneralPurpose

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION ·WithMT-200package ·Complementtotype2SB1648 APPLICATIONS ·Audio,seriesregulatorandgeneralpurpose

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=150V(Min) •HighDCCurrentGain-:hFE=5000(Min.)@(IC=10A,VCE=4V) •LowCollectorSaturationVoltage-:VCE(sat)=2.5V(Max)@(IC=10A,IB=10mA)B •ComplementtoType2SB1649 APPLICATIONS •Designedforseriesregulatora

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNTripleDiffusedPlanarTransistor

[SANKEN] SiliconNPNTripleDiffusedPlanarTransistor(Complementtotype2SB1649) Application:Audio,SeriesRegulatorandGeneralPurpose

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

SiliconNPNTripleDiffusedPlanarTransistor

SiliconNPNTripleDiffusedPlanarTransistor(Complementtotype2SB1649) Application:Audio,SeriesRegulatorandGeneralPurpose

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken

SiliconNPNtriplediffusionplanertype(Forhighvoltage-withstandswitching)

SiliconNPNtriplediffusionplanertype Forhighvoltage-withstandswitching ■Features ●HighcollectortobasevoltageVCBO. ●HighcollectortoemittervoltageVCEO. ●LargecollectorpowerdissipationPC. ●LowcollectortoemittersaturationvoltageVCE(sat). ●Mtypepackageallowing

PanasonicPanasonic Corporation

松下松下电器

Panasonic

PowerTransistor(400V,0.5A)

Features 1)Highbreakdownvoltage.(BVCEO=400V)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

NPNTRIPLEDIFFUSEDTYPE(HIGHPOWERSWITCHING,HAMMERDRIVE,PULSEMOTORDRIVEAPPLICATIONS)

HighPowerSwitchingApplications HammerDrive,PulseMotorDriveApplications ●HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) ●Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNPNtriplediffusionplanartype

SiliconNPNtriplediffusionplanartype Forhighcurrentamplification,poweramplification ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •Allowingsupplywiththeradialtaping

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNepitaxialplanertype(Forlow-frequencypoweramplification)

SiliconNPNepitaxialplanertype Forlow-frequencypoweramplification ■Features ●LowcollectortoemittersaturationvoltageVCE(sat).

PanasonicPanasonic Corporation

松下松下电器

Panasonic

PowerTransistor(60V,3A)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PMLpackage ·Highspeed ·Highbreakdownvoltage ·Built-indamperdiode APPLICATIONS ·ColorTVhorizontaldeflectionoutput

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

ColorTVHorizontalDeflectionOutputApplications

·Highspeed. ·Highbreakdownvoltage(VCBO=1500V). ·Highreliability(AdoptionofHVPprocess). ·AdoptionofMBITprocess. ·On-chipdamperdiode.

SANYOSanyo

三洋三洋电机株式会社

SANYO

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PMLpackage ·Highspeed ·Highbreakdownvoltage ·Built-indamperdiode APPLICATIONS ·ColorTVhorizontaldeflectionoutput

SAVANTIC

Savantic, Inc.

SAVANTIC

ColorTVHorizontalDeflectionOutputApplications

ColorTVHorizontalDeflection OutputApplications Features ·Highspeed. ·Highbreakdownvoltage(VCBO=1500V). ·Highreliability(AdoptionofHVPprocess). ·AdoptionofMBITprocess.

SANYOSanyo

三洋三洋电机株式会社

SANYO

ColorTVHorizontalDeflectionOutputApplications

ColorTVHorizontalDeflectionOutputApplications Features ·Highspeed. ·Highbreakdownvoltage(VCBO=1500V). ·Highreliability(AdoptionofHVPprocess). ·AdoptionofMBITprocess. ·On-chipdamperdiode.

SANYOSanyo

三洋三洋电机株式会社

SANYO

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PMLpackage ·Highspeed ·Highbreakdownvoltage ·Highreliability ·Built-indamperdiode APPLICATIONS ·ColorTVhorizontaldeflectionoutput

SAVANTIC

Savantic, Inc.

SAVANTIC

2SD25产品属性

  • 类型

    描述

  • 型号

    2SD25

  • 制造商

    NJS

  • 功能描述

    2SD250 TO5

更新时间:2024-4-27 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
22+
TO-126
2987
只售原装自家现货!诚信经营!欢迎来电
NA
19+
59413
原厂代理渠道,每一颗芯片都可追溯原厂;
CJ/长电
23+
TO126
6000
只有原装正品,老板发话合适就出
CJ/长电
24+
TO126
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
NEC
TO-126
265209
假一罚十原包原标签常备现货!
NEC
23+
TO-126
50000
全新原装正品现货,支持订货
NEC
07+
TO-126
10550
CJ/长电
22+
TO-126
118600
原装正品现货,可开13点税
21+
TO-126
65200
一级代理/放心采购
23+
N/A
65210
正品授权货源可靠

2SD25芯片相关品牌

  • ABLIC
  • AMD
  • COILCRAFT
  • Good-Ark
  • GREATECS
  • ILLINOISCAPACITOR
  • Infineon
  • KEMET
  • MOLEX9
  • MSYSTEM
  • SSDI
  • WTE

2SD25数据表相关新闻