2SD17晶体管资料

  • 2SD17别名:2SD17三极管、2SD17晶体管、2SD17晶体三极管

  • 2SD17生产厂家:日本三肯公司

  • 2SD17制作材料:Si-NPN

  • 2SD17性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SD17封装形式:直插封装

  • 2SD17极限工作电压:150V

  • 2SD17最大电流允许值:6A

  • 2SD17最大工作频率:<1MHZ或未知

  • 2SD17引脚数:2

  • 2SD17最大耗散功率:80W

  • 2SD17放大倍数

  • 2SD17图片代号:E-44

  • 2SD17vtest:150

  • 2SD17htest:999900

  • 2SD17atest:6

  • 2SD17wtest:80

  • 2SD17代换 2SD17用什么型号代替:BD245D,BDX11,BDY19,BDY74,2N3442,2N3773,2SD731,2SD732,3DD67E,

2SD17价格

参考价格:¥1.8410

型号:2SD1733TLP 品牌:Rohm 备注:这里有2SD17多少钱,2024年最近7天走势,今日出价,今日竞价,2SD17批发/采购报价,2SD17行情走势销售排行榜,2SD17报价。
型号 功能描述 生产厂家&企业 LOGO 操作

NPNSILICONTRANSISTOR

DESCRIPTION The2SD1700isNPNsiliconepitaxialdarlingtontransistordesignedforpulsemotordriver,printerdriver,solenoiddriver. FEATURES ●HighDCCurrentGain ●ZenerDiodebetweenCollectorandBaseforAbsorbingSurgeVoltageisBuilt-in. ●ReverseDiodebetweenCollectorandEmit

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNSILICONTRANSISTOR

DESCRIPTION The2SD1701isNPNsiliconepitaxialdarlingtontransistordesignedforpulsemotordriver,printerdriver,solenoiddriver. FEATURES ●HighDCCurrentgain. ●ZenerDiodebetweenCollectorandBaseforAbsorbing SurgeVoltageisbuilt-in. ●ReverseDiodebetweenCollectorand

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD

DESCRIPTION The2SD1702isNPNsiliconepitaxialdarlingtontransistordesignedforpulsemotor,printerdriver,solenoiddriver.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

OldCompanyNameinCatalogsandOtherDocuments

DESCRIPTION The2SD1702isNPNsiliconepitaxialdarlingtontransistordesignedforpulsemotor,printerdriver,solenoiddriver.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min) •GoodLinearityofhFE •LowCollectorSaturationVoltage-:VCE(sat)=0.5V(Max.)@IC=6A •ComplementtoType2SB1154 APPLICATIONS •Designedforpowerswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNepitaxialplanartype

Forpowerswitching Complementaryto2SB1154 ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •SatisfactorylinearityofforwardcurrenttransferratiohFE •LargecollectorcurrentIC •Full-packpackagewhichcanbeinstalledtotheheatsinkwithonescrew

PanasonicPanasonic Corporation

松下松下电器

Panasonic

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min) ·GoodLinearityofhFE ·LowCollectorSaturationVoltage-:VCE(sat)=0.5V(Max.)@IC=7A ·ComplementtoType2SB1155 APPLICATIONS ·Designedforpowerswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SILICONNPNEPITAXIALPLANARTYPEPOWERSWITCHING

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

PanasonicPanasonic Corporation

松下松下电器

Panasonic

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage:V(BR)CEO=80V(Min) ·GoodLinearityofhFE ·LowCollectorSaturationVoltage- :VCE(sat)=0.5V(Max.)@IC=8A ·ComplementtoType2SB1156 APPLICATIONS ·Designedforpowerswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNepitaxialplanartype

ForpowerswitchingComplementaryto2SB1156 ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •SatisfactorylinearityofforwardcurrenttransferratiohFE •LargecollectorcurrentIC •Full-packpackagewhichcanbeinstalledtotheheatsinkwithonescrew

PanasonicPanasonic Corporation

松下松下电器

Panasonic

iscSiliconNPNPowerTransistor

DESCRIPTION •HighBreakdownVoltage-:VCBO=1500V(Min) •HighSwitchingSpeed •Built-inDamperDiode APPLICATIONS •ColorTVhorizontaldeflectionoutput •Colordisplayhorizontaldeflectionoutput

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PMLpackage •Highvoltage;highspeed •Highreliability. APPLICATIONS •Ultrahigh-definitionCRTdisplay •Horizontaldeflectionoutputapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PMLpackage •Highvoltage;highspeed •Highreliability. APPLICATIONS •Ultrahigh-definitionCRTdisplay •Horizontaldeflectionoutputapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconDiffusedPowerTransistor

GENERALDESCRIPTION Highvoltage,high-speedswitchingnpntransistorsinaplasticpackage,pimarilyforuseinhorizontaldeflectioncircuitesofcolourtelevisionreceivers

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS

NPNTripleDiffusedPlanarSiliconTransistor500V/7ASwitchingRegulatorApplications

500V/7ASwitchingRegulatorApplications Features •Highbreakdownvoltage,highreliability. •Fastswitchingspeed. •WideASO. •AdoptionofMBITprocess. •Micalesspackagefacilitatingmounting.

SANYOSanyo

三洋三洋电机株式会社

SANYO

NPNTRIPLEDIFFUSEDPLANARSILICONTRANSISTOR(COLORTVHORIZONTALOUTPUTAPPLICATIONS)

COLORTVHORIZONTALOUTPUTAPPLICATIONS(DamperDiodeBUILTIN) ●HighCollector-BaseVoltage(VCBO=1500V) ●HighSpeedSwitching

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SB1157 •HightransitionfrequencyfT •SatisfactorylinearityofhFE •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SB1157 •HightransitionfrequencyfT •SatisfactorylinearityofhFE •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=120V(Min) •GoodLinearityofhFE •WideAreaofSafeOperation •ComplementtoType2SB1158 APPLICATIONS •Designedforhighpoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=140V(Min.) •GoodLinearityofhFE •WideAreaofSafeOperation •ComplementtoType2SB1159 APPLICATIONS •Designedforhighpoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SB1160 •HightransitionfrequencyfT •SatisfactorylinearityofhFE •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SB1160 •HightransitionfrequencyfT •SatisfactorylinearityofhFE •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=160V(Min.) •GoodLinearityofhFE •WideAreaofSafeOperation •ComplementtoType2SB1161 APPLICATIONS •Designedforhighpoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SB1162 ·ExcellentlinearityofhFE ·Wideareaofsafeoperation(ASO) ·HightransitionfrequencyfT APPLICATIONS ·Forhighpoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SB1162 ·ExcellentlinearityofhFE ·Wideareaofsafeoperation(ASO) ·HightransitionfrequencyfT APPLICATIONS ·Forhighpoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PLpackage •Complementtotype2SB1163 •ExcellentlinearityofhFE •Wideareaofsafeoperation(ASO) •HightransitionfrequencyfT APPLICATIONS •Forhighpoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SINPNTRIPLEDIFFUSEDPLANARHIGHPOWERAMPLIFIER

SiNPNTripleDiffusedPlabarHighPowerAmplifierCommplementaryPairwith2SB1163

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PLpackage •Complementtotype2SB1163 •ExcellentlinearityofhFE •Wideareaofsafeoperation(ASO) •HightransitionfrequencyfT APPLICATIONS •Forhighpoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNTripleDiffusionPlanarType

Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●Highemitter-basevoltage(Collectoropen)VEBO

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SiliconNPNtriplediffusionplanartype

SiliconNPNtriplediffusionplanartype Forpoweramplificationwithhighforwardcurrenttransferratio ■Features •HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity •Highemitter-basevoltage(Collectoropen)VEBO •Ntypepackageenablingdirectsolderingofthe

PanasonicPanasonic Corporation

松下松下电器

Panasonic

TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

iscSiliconNPNPowerTransistor

DESCRIPTION •HighCollectorCurrent::IC=5A •LowCollectorSaturationVoltage:VCE(sat)=1.0V(Max.)@IC=3A •WideAreaofSafeOperation •ComplementtoType2SB1291 APPLICATIONS •Designedforlowfrequencypoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

50V/5ASwitchingApplications

50V/5ASwitchingApplications Applications ·Relaydrivers,high-speedinverters,converters. Features ·Lowcollector-to-emittersaturationvoltage. ·HighfT. ·ExcellentlinearityofhFE. ·Fastswitchingtime.

SANYOSanyo

三洋三洋电机株式会社

SANYO

50V/8ASwitchingApplications

50V/8ASwitchingApplications Features ·Lowcollector-to-emittersaturationvoltage. ·HighfT. ·ExcellentlinearityofhFE. ·Fastswitchinttime. Applications ·Relaydrivers,high-speedinverters,converters.

SANYOSanyo

三洋三洋电机株式会社

SANYO

100V/3ASwitchingApplications

Features 1.Lowcollector-to-emittersaturationvoltage 2.HighfT 3.ExcellentlinearityofhFE 4.Fastswitchingtime

SANYOSanyo

三洋三洋电机株式会社

SANYO

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage VCEO:100V(Min) ·LowCollectorSaturationVoltage :VCE(sat)=0.4V(Max.)@IC=1.5A ·ComplementtothePNP2SB1167 ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforhighv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=80V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=1.5V(Max)@IC=1A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

100V/4ASwitchingApplications

LargeCurrentSwitchingApplications Features ·Relaydrivers,high-speedinverters,converters. ·Lowcollector-to-emittersaturationvoltage. ·HighfT. ·ExcellentlinearityofhFE. ·Shortswitchingtime.

SANYOSanyo

三洋三洋电机株式会社

SANYO

iscSiliconNPNPowerTransistor

DESCRIPTION •HighVoltage •HighSwitchingSpeed •Built-indamperdiode •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION •HighVoltage •HighSwitchingSpeed •Built-indamperdiode •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SILICONPNPTRIPLEDIFFUSEDPLANARTYPEHORIZONTALDEFLECTIONOUTPUT

SiliconPNPTriple-DiffusedPlanarType HorizontalDeflectionOutput ■Features ●Damperdiodebuilt-in ●Minimizesexternalcomponentcountsandsimplifiescircuitry ●Highbreakdownvoltage,highreliability ●Highspeedswitching ●Wideareaofsafetyoperation(ASO)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Built-indamperdiode •Highvoltage,highspeed •Wideareaofsafeoperation APPLICATIONS •Forhorizontaldeflectionoutputapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Built-indamperdiode •Highvoltage,highspeed •Wideareaofsafeoperation APPLICATIONS •Forhorizontaldeflectionoutputapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SILICONPNPTRIPLEDIFFUSEDPLANARTYPEHORIZONTALDEFLECTIONOUTPUT

PanasonicPanasonic Corporation

松下松下电器

Panasonic

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighVoltage ·HighSwitchingSpeed ·Built-indamperdiode ·WideAreaofSafeOperation APPLICATIONS ·Designedforhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION •HighVoltage •HighSwitchingSpeed •Built-indamperdiode •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SILICONPNPTRIPLEDIFFUSEDPLANARTYPEHORIZONTALDEFLECTIONOUTPUT

SiliconPNPTriple-DiffusionPlanarType HorizontalDeflectionOutput Features •Damperdiodebuilt-in •Minimizesexternalcomponentcountsandsimplifiescircuitry •Highbreakdownvoltage,highreliability •Highspeedswitching •Wideareaofsafetyoperation(ASO)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SILICONPNPTRIPLEDIFFUSEDPLANARTYPEHORIZONTALDEFLECTIONOUTPUT

SiliconPNPTriple-DiffusedPlanarType HorizontalDeflectionOutput ■Features ●Damperdiodebuilt-in ●Minimizesexternalcomponentcountsandsimplifiescircuitry ●Highbreakdownvoltage,highreliability ●Highspeedswitching ●Wideareaofsafetyoperation(ASO)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

iscSiliconNPNPowerTransistor

DESCRIPTION •HighVoltage •HighSwitchingSpeed •Built-indamperdiode •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerTransistor(80V,1A)

●Features 1)HighVCEO,VCEO=80V 2)HighIC,IC=1A(DC) 3)GoodhFElinearity. 4)LowVCE(sat). 5)Complementsthe2SB1260/2SB1241/2SB1181.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PowerTransistor(80V,1A)

●Features 1)HighVCEO,VCEO=80V 2)HighIC,IC=1A(DC) 3)GoodhFElinearity. 4)LowVCE(sat). 5)Complementsthe2SB1260/2SB1241/2SB1181.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PowerTransistor

Features ●HighVCEO,VCEO=80V. ●HighIC,IC=1A(DC). ●GoodhFElinearity. ●LowVCE(sat). ●Epitaxialplanertype ●NPNsilicontransistor

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PowerTransistor(80V,1A)

●Features 1)HighVCEO,VCEO=80V 2)HighIC,IC=1A(DC) 3)GoodhFElinearity. 4)LowVCE(sat). 5)Complementsthe2SB1260/2SB1241/2SB1181.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

iscSiliconNPNPowerTransistor

DESCRIPTION •HighVoltage •HighSwitchingSpeed •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION •HighVoltage •HighSwitchingSpeed •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION •HighVoltage •HighSwitchingSpeed •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION •HighVoltage •HighSwitchingSpeed •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION •HighVoltage •HighSwitchingSpeed •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Wideareaofsafeoperation •Highvoltage,highspeed APPLICATIONS •Horizontaldeflectionoutputapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Wideareaofsafeoperation •Highvoltage,highspeed APPLICATIONS •Horizontaldeflectionoutputapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SD17产品属性

  • 类型

    描述

  • 型号

    2SD17

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR SP-8 60V .8A 1W ECB

更新时间:2024-4-26 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PANASON/松下
23+
NA/
3300
原装现货,当天可交货,原型号开票
PANASONIC
08+
TO220
179
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Panasonic/Panasonic Corporatio
21+
TO220
179
优势代理渠道,原装正品,可全系列订货开增值税票
PANASONIC
21+
TO220
179
原装现货假一赔十
PANASONIC
2023+
TO220
8800
正品渠道现货 终端可提供BOM表配单。
SANYO
08PB
60000
PANASONIC/松下
TO220
265209
假一罚十原包原标签常备现货!
PANASONIC
22+
TO220
25000
原装现货,价格优惠,假一罚十
PANASON
2020+
TO220
358
百分百原装正品 真实公司现货库存 本公司只做原装 可
PANASONIC
08+
TO220
279
全新原装 实单必成

2SD17芯片相关品牌

  • ABLIC
  • AMD
  • COILCRAFT
  • Good-Ark
  • GREATECS
  • ILLINOISCAPACITOR
  • Infineon
  • KEMET
  • MOLEX9
  • MSYSTEM
  • SSDI
  • WTE

2SD17数据表相关新闻