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2SD17晶体管资料
2SD17别名:2SD17三极管、2SD17晶体管、2SD17晶体三极管
2SD17生产厂家:日本三肯公司
2SD17制作材料:Si-NPN
2SD17性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2SD17封装形式:直插封装
2SD17极限工作电压:150V
2SD17最大电流允许值:6A
2SD17最大工作频率:<1MHZ或未知
2SD17引脚数:2
2SD17最大耗散功率:80W
2SD17放大倍数:
2SD17图片代号:E-44
2SD17vtest:150
2SD17htest:999900
- 2SD17atest:6
2SD17wtest:80
2SD17代换 2SD17用什么型号代替:BD245D,BDX11,BDY19,BDY74,2N3442,2N3773,2SD731,2SD732,3DD67E,
2SD17价格
参考价格:¥1.8410
型号:2SD1733TLP 品牌:Rohm 备注:这里有2SD17多少钱,2024年最近7天走势,今日出价,今日竞价,2SD17批发/采购报价,2SD17行情走势销售排行榜,2SD17报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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NPNSILICONTRANSISTOR DESCRIPTION The2SD1700isNPNsiliconepitaxialdarlingtontransistordesignedforpulsemotordriver,printerdriver,solenoiddriver. FEATURES ●HighDCCurrentGain ●ZenerDiodebetweenCollectorandBaseforAbsorbingSurgeVoltageisBuilt-in. ●ReverseDiodebetweenCollectorandEmit | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNSILICONTRANSISTOR DESCRIPTION The2SD1701isNPNsiliconepitaxialdarlingtontransistordesignedforpulsemotordriver,printerdriver,solenoiddriver. FEATURES ●HighDCCurrentgain. ●ZenerDiodebetweenCollectorandBaseforAbsorbing SurgeVoltageisbuilt-in. ●ReverseDiodebetweenCollectorand | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD DESCRIPTION The2SD1702isNPNsiliconepitaxialdarlingtontransistordesignedforpulsemotor,printerdriver,solenoiddriver. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
OldCompanyNameinCatalogsandOtherDocuments DESCRIPTION The2SD1702isNPNsiliconepitaxialdarlingtontransistordesignedforpulsemotor,printerdriver,solenoiddriver. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min) •GoodLinearityofhFE •LowCollectorSaturationVoltage-:VCE(sat)=0.5V(Max.)@IC=6A •ComplementtoType2SB1154 APPLICATIONS •Designedforpowerswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNepitaxialplanartype Forpowerswitching Complementaryto2SB1154 ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •SatisfactorylinearityofforwardcurrenttransferratiohFE •LargecollectorcurrentIC •Full-packpackagewhichcanbeinstalledtotheheatsinkwithonescrew | PanasonicPanasonic Corporation 松下松下电器 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min) ·GoodLinearityofhFE ·LowCollectorSaturationVoltage-:VCE(sat)=0.5V(Max.)@IC=7A ·ComplementtoType2SB1155 APPLICATIONS ·Designedforpowerswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SILICONNPNEPITAXIALPLANARTYPEPOWERSWITCHING ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | PanasonicPanasonic Corporation 松下松下电器 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage:V(BR)CEO=80V(Min) ·GoodLinearityofhFE ·LowCollectorSaturationVoltage- :VCE(sat)=0.5V(Max.)@IC=8A ·ComplementtoType2SB1156 APPLICATIONS ·Designedforpowerswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNepitaxialplanartype ForpowerswitchingComplementaryto2SB1156 ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •SatisfactorylinearityofforwardcurrenttransferratiohFE •LargecollectorcurrentIC •Full-packpackagewhichcanbeinstalledtotheheatsinkwithonescrew | PanasonicPanasonic Corporation 松下松下电器 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighBreakdownVoltage-:VCBO=1500V(Min) •HighSwitchingSpeed •Built-inDamperDiode APPLICATIONS •ColorTVhorizontaldeflectionoutput •Colordisplayhorizontaldeflectionoutput | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PMLpackage •Highvoltage;highspeed •Highreliability. APPLICATIONS •Ultrahigh-definitionCRTdisplay •Horizontaldeflectionoutputapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PMLpackage •Highvoltage;highspeed •Highreliability. APPLICATIONS •Ultrahigh-definitionCRTdisplay •Horizontaldeflectionoutputapplications | SAVANTIC Savantic, Inc. | |||
SiliconDiffusedPowerTransistor GENERALDESCRIPTION Highvoltage,high-speedswitchingnpntransistorsinaplasticpackage,pimarilyforuseinhorizontaldeflectioncircuitesofcolourtelevisionreceivers | WINGSWing Shing Computer Components Wing Shing Computer Components | |||
NPNTripleDiffusedPlanarSiliconTransistor500V/7ASwitchingRegulatorApplications 500V/7ASwitchingRegulatorApplications Features •Highbreakdownvoltage,highreliability. •Fastswitchingspeed. •WideASO. •AdoptionofMBITprocess. •Micalesspackagefacilitatingmounting. | SANYOSanyo 三洋三洋电机株式会社 | |||
NPNTRIPLEDIFFUSEDPLANARSILICONTRANSISTOR(COLORTVHORIZONTALOUTPUTAPPLICATIONS) COLORTVHORIZONTALOUTPUTAPPLICATIONS(DamperDiodeBUILTIN) ●HighCollector-BaseVoltage(VCBO=1500V) ●HighSpeedSwitching | WINGSWing Shing Computer Components Wing Shing Computer Components | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •Complementtotype2SB1157 •HightransitionfrequencyfT •SatisfactorylinearityofhFE •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •Complementtotype2SB1157 •HightransitionfrequencyfT •SatisfactorylinearityofhFE •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=120V(Min) •GoodLinearityofhFE •WideAreaofSafeOperation •ComplementtoType2SB1158 APPLICATIONS •Designedforhighpoweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=140V(Min.) •GoodLinearityofhFE •WideAreaofSafeOperation •ComplementtoType2SB1159 APPLICATIONS •Designedforhighpoweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •Complementtotype2SB1160 •HightransitionfrequencyfT •SatisfactorylinearityofhFE •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •Complementtotype2SB1160 •HightransitionfrequencyfT •SatisfactorylinearityofhFE •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=160V(Min.) •GoodLinearityofhFE •WideAreaofSafeOperation •ComplementtoType2SB1161 APPLICATIONS •Designedforhighpoweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SB1162 ·ExcellentlinearityofhFE ·Wideareaofsafeoperation(ASO) ·HightransitionfrequencyfT APPLICATIONS ·Forhighpoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SB1162 ·ExcellentlinearityofhFE ·Wideareaofsafeoperation(ASO) ·HightransitionfrequencyfT APPLICATIONS ·Forhighpoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PLpackage •Complementtotype2SB1163 •ExcellentlinearityofhFE •Wideareaofsafeoperation(ASO) •HightransitionfrequencyfT APPLICATIONS •Forhighpoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SINPNTRIPLEDIFFUSEDPLANARHIGHPOWERAMPLIFIER SiNPNTripleDiffusedPlabarHighPowerAmplifierCommplementaryPairwith2SB1163 | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PLpackage •Complementtotype2SB1163 •ExcellentlinearityofhFE •Wideareaofsafeoperation(ASO) •HightransitionfrequencyfT APPLICATIONS •Forhighpoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNTripleDiffusionPlanarType Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●Highemitter-basevoltage(Collectoropen)VEBO | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SiliconNPNtriplediffusionplanartype SiliconNPNtriplediffusionplanartype Forpoweramplificationwithhighforwardcurrenttransferratio ■Features •HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity •Highemitter-basevoltage(Collectoropen)VEBO •Ntypepackageenablingdirectsolderingofthe | PanasonicPanasonic Corporation 松下松下电器 | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighCollectorCurrent::IC=5A •LowCollectorSaturationVoltage:VCE(sat)=1.0V(Max.)@IC=3A •WideAreaofSafeOperation •ComplementtoType2SB1291 APPLICATIONS •Designedforlowfrequencypoweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
50V/5ASwitchingApplications 50V/5ASwitchingApplications Applications ·Relaydrivers,high-speedinverters,converters. Features ·Lowcollector-to-emittersaturationvoltage. ·HighfT. ·ExcellentlinearityofhFE. ·Fastswitchingtime. | SANYOSanyo 三洋三洋电机株式会社 | |||
50V/8ASwitchingApplications 50V/8ASwitchingApplications Features ·Lowcollector-to-emittersaturationvoltage. ·HighfT. ·ExcellentlinearityofhFE. ·Fastswitchinttime. Applications ·Relaydrivers,high-speedinverters,converters. | SANYOSanyo 三洋三洋电机株式会社 | |||
100V/3ASwitchingApplications Features 1.Lowcollector-to-emittersaturationvoltage 2.HighfT 3.ExcellentlinearityofhFE 4.Fastswitchingtime | SANYOSanyo 三洋三洋电机株式会社 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector–EmitterSustainingVoltage VCEO:100V(Min) ·LowCollectorSaturationVoltage :VCE(sat)=0.4V(Max.)@IC=1.5A ·ComplementtothePNP2SB1167 ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforhighv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=80V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=1.5V(Max)@IC=1A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
100V/4ASwitchingApplications LargeCurrentSwitchingApplications Features ·Relaydrivers,high-speedinverters,converters. ·Lowcollector-to-emittersaturationvoltage. ·HighfT. ·ExcellentlinearityofhFE. ·Shortswitchingtime. | SANYOSanyo 三洋三洋电机株式会社 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighVoltage •HighSwitchingSpeed •Built-indamperdiode •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighVoltage •HighSwitchingSpeed •Built-indamperdiode •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SILICONPNPTRIPLEDIFFUSEDPLANARTYPEHORIZONTALDEFLECTIONOUTPUT SiliconPNPTriple-DiffusedPlanarType HorizontalDeflectionOutput ■Features ●Damperdiodebuilt-in ●Minimizesexternalcomponentcountsandsimplifiescircuitry ●Highbreakdownvoltage,highreliability ●Highspeedswitching ●Wideareaofsafetyoperation(ASO) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PNpackage •Built-indamperdiode •Highvoltage,highspeed •Wideareaofsafeoperation APPLICATIONS •Forhorizontaldeflectionoutputapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PNpackage •Built-indamperdiode •Highvoltage,highspeed •Wideareaofsafeoperation APPLICATIONS •Forhorizontaldeflectionoutputapplications | SAVANTIC Savantic, Inc. | |||
SILICONPNPTRIPLEDIFFUSEDPLANARTYPEHORIZONTALDEFLECTIONOUTPUT
| PanasonicPanasonic Corporation 松下松下电器 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·HighVoltage ·HighSwitchingSpeed ·Built-indamperdiode ·WideAreaofSafeOperation APPLICATIONS ·Designedforhorizontaldeflectionoutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighVoltage •HighSwitchingSpeed •Built-indamperdiode •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SILICONPNPTRIPLEDIFFUSEDPLANARTYPEHORIZONTALDEFLECTIONOUTPUT SiliconPNPTriple-DiffusionPlanarType HorizontalDeflectionOutput Features •Damperdiodebuilt-in •Minimizesexternalcomponentcountsandsimplifiescircuitry •Highbreakdownvoltage,highreliability •Highspeedswitching •Wideareaofsafetyoperation(ASO) | PanasonicPanasonic Corporation 松下松下电器 | |||
SILICONPNPTRIPLEDIFFUSEDPLANARTYPEHORIZONTALDEFLECTIONOUTPUT SiliconPNPTriple-DiffusedPlanarType HorizontalDeflectionOutput ■Features ●Damperdiodebuilt-in ●Minimizesexternalcomponentcountsandsimplifiescircuitry ●Highbreakdownvoltage,highreliability ●Highspeedswitching ●Wideareaofsafetyoperation(ASO) | PanasonicPanasonic Corporation 松下松下电器 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighVoltage •HighSwitchingSpeed •Built-indamperdiode •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerTransistor(80V,1A) ●Features 1)HighVCEO,VCEO=80V 2)HighIC,IC=1A(DC) 3)GoodhFElinearity. 4)LowVCE(sat). 5)Complementsthe2SB1260/2SB1241/2SB1181. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PowerTransistor(80V,1A) ●Features 1)HighVCEO,VCEO=80V 2)HighIC,IC=1A(DC) 3)GoodhFElinearity. 4)LowVCE(sat). 5)Complementsthe2SB1260/2SB1241/2SB1181. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PowerTransistor Features ●HighVCEO,VCEO=80V. ●HighIC,IC=1A(DC). ●GoodhFElinearity. ●LowVCE(sat). ●Epitaxialplanertype ●NPNsilicontransistor | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PowerTransistor(80V,1A) ●Features 1)HighVCEO,VCEO=80V 2)HighIC,IC=1A(DC) 3)GoodhFElinearity. 4)LowVCE(sat). 5)Complementsthe2SB1260/2SB1241/2SB1181. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighVoltage •HighSwitchingSpeed •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighVoltage •HighSwitchingSpeed •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighVoltage •HighSwitchingSpeed •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighVoltage •HighSwitchingSpeed •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighVoltage •HighSwitchingSpeed •WideAreaofSafeOperation APPLICATIONS •Designedforhorizontaldeflectionoutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •Wideareaofsafeoperation •Highvoltage,highspeed APPLICATIONS •Horizontaldeflectionoutputapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •Wideareaofsafeoperation •Highvoltage,highspeed APPLICATIONS •Horizontaldeflectionoutputapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
2SD17产品属性
- 类型
描述
- 型号
2SD17
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR SP-8 60V .8A 1W ECB
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PANASON/松下 |
23+ |
NA/ |
3300 |
原装现货,当天可交货,原型号开票 |
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PANASONIC |
08+ |
TO220 |
179 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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Panasonic/Panasonic Corporatio |
21+ |
TO220 |
179 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
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PANASONIC |
21+ |
TO220 |
179 |
原装现货假一赔十 |
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PANASONIC |
2023+ |
TO220 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
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SANYO |
08PB |
60000 |
|||||
PANASONIC/松下 |
TO220 |
265209 |
假一罚十原包原标签常备现货! |
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PANASONIC |
22+ |
TO220 |
25000 |
原装现货,价格优惠,假一罚十 |
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PANASON |
2020+ |
TO220 |
358 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
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PANASONIC |
08+ |
TO220 |
279 |
全新原装 实单必成 |
2SD17规格书下载地址
2SD17参数引脚图相关
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- 2SD1672
- 2SD1671
2SD17数据表相关新闻
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2SD1859TV2R中文资料
2019-2-15
DdatasheetPDF页码索引
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- P76
- P77
- P78
- P79
- P80