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位置：首页 > IC中文资料第393页 > 2SD11

2SD11晶体管资料

  • 2SD11别名：2SD11三极管、2SD11晶体管、2SD11晶体三极管

  • 2SD11生产厂家：日本日电公司

  • 2SD11制作材料：Ge-NPN

  • 2SD11性质：开关管 （S）

  • 2SD11封装形式：直插封装

  • 2SD11极限工作电压：25V

  • 2SD11最大电流允许值：0.3A

  • 2SD11最大工作频率：2.5MHZ

  • 2SD11引脚数：3

  • 2SD11最大耗散功率：0.15W

  • 2SD11放大倍数：

  • 2SD11图片代号：C-65

  • 2SD11vtest：25

  • 2SD11htest：2500000

  • 2SD11atest：.3

  • 2SD11wtest：.15

  • 2SD11代换 2SD11用什么型号代替：ASY28,ASY29,ASY73,ASY74,ASY75,2N1302,3BX81B,

型号 功能描述 生产厂家&企业 LOGO 操作
2SD110

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighPowerDissipation-:PC=100W@TC=25℃ ·HighCurrentCapability-:IC=10A APPLICATIONS ·Designedforpoweramplifier,powerswitching,DC-DC converterandregulatorapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1101

SiliconNPNEpitaxial

Application •Lowfrequencyamplifier •Complementarypairwith2SB831

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1101

SiliconNPNEpitaxial

Features ●LowFrequencyamplifier.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SD1101

SiliconNPNEpitaxial

Application •Lowfrequencyamplifier •Complementarypairwith2SB831

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1101ACTL-E

SiliconNPNEpitaxial

Application •Lowfrequencyamplifier •Complementarypairwith2SB831

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1105

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min) ·WideAreaofSafeOperation ·HighPowerandHighReliability APPLICATIONS ·DesignedforhighpowerAFamplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1105

SINPNDIFFUSEDJUNCTIONMESADARLINGTON

2SD1044->SiNPNDiffusedjunctionMesaDarlington 2SD1091->SiNPNTripleDiffusedPlanarDarlington 2SD1105->SiNPNDiffusedjunctionMesa

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SD111

iscSiliconNPNPowerTransistor

DESCRIPTION •HighPowerDissipation- :PC=100W@TC=25℃ •HighCurrentCapability- :IC=10A APPLICATIONS •Designedforpoweramplifier,powerswitching,DC-DC converterandregulatorapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1110

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=120V(Min) •GoodLinearityofhFE •ComplementtoType2SB849 APPLICATIONS •Designedforaudiofrequencypoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1110

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Complementtotype2SB849 •Wideareaofsafeoperation APPLICATIONS •Foruseinlowfrequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1111

DriverApplications

·HighDCCurrentGain(5000orgreater). ·LargecurrentcapacityandwideASO. ·Lowsaturationvoltage(VCE(sat)=0.8Vtyp).

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1113

SiliconNPNTripleDiffused

Application Igniter

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1113

SiliconNPNTripleDiffused

Application Igniter

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1113

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterSustainingVoltage- :VCEO(SUS)=300V(Min) •HighDCCurrentGain :hFE=500(Min)@IC=4A APPLICATIONS •Igniter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1113K

SiliconNPNTripleDiffused

Application Igniter

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1113K

SiliconNPNTripleDiffused

Application Igniter

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1115

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ·Collector-EmitterSustainingVoltage-:VCEO(SUS)=300V(Min) ·HighDCCurrentGain:hFE=500(Min)@IC=2A APPLICATIONS ·Designedforhighvoltageswitching,igniterapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1115

SiliconNPNTripleDiffused

Application Highvoltageswitching,igniter

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1115K

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220package ·DARLINGTON APPLICATIONS ·Forhighvoltageswitchingandignitorapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1115K

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220package ·DARLINGTON APPLICATIONS ·Forhighvoltageswitchingandignitorapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1115K

SiliconNPNTripleDiffused

Application Highvoltageswitching,igniter

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1117

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=40V(Min) •LowCollector-EmitterSaturationVoltage-:VCE(sat)=1.2V(Max)@IC=5A •WideAreaofSafeOperation •ComplementtoType2SB850 APPLICATIONS •Designedforaudioamplifier,seriesregulatorsandgeneralpurposepower

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1118

TRIPLEDIFFUSEDPLANERTYPEHIGHSPEEDSWITCHING

Features ●Highspeedswitching ●HighD.Ccurrentgain ●Lowsaturationvoltage ●Highreliability Applications ●Switchingregulators ●DC-DCconverter ●Solidstaterelay ●Generalpurposepoweramplifier

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SD1118

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=50V(Min) ·HighDCCurrentGain-:hFE=300V(Min.)@IC=1A ·LowCollectorSaturationVoltage ·HighReliability APPLICATIONS ·Switchingregulators ·DC-DCconverter ·Solidsaterelay ·Generalpurposepoweram

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1119

SiliconNPNepitaxialplanartype

Features ●Lowcollector-emittersaturationvoltageVCE(sat). ●Satisfactoryoperationperformancesathighefficiencywith thelowvoltagepowersupply.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SD1119

TRANSISTOR(NPN)

FEATURES ●Lowcollector-emittersaturationvoltageVCE(sat) ●Satisfactoryoperationperformancesathighefficiencywiththelow voltagepowersupply.

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
2SD1119

SiliconNPNepitaxialplanertype(Forlow-frequencypoweramplification0

SiliconNPNepitaxialplanertype Forlow-frequencypoweramplification ■Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●Satisfactoryoperationperformancesathighefficiencywiththelow-voltagepowersupply. ●Minitypepackage,allowingdownsizingoftheequipmentan

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SD1119

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●Lowcollector-emittersaturationvoltageVCE(sat) ●Satisfactoryoperationperformancesathighefficiencywiththelow voltagepowersupply.

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2SD1119

SiliconNPNtransistorinaSOT-89PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-89PlasticPackage. Features LowVCE(sat),Highperformanceatlowsupplyvoltage. Applications AFPoweramplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SD1119

Plastic-EncapsulateTransistors

FEATURES •Lowcollector-emittersaturationvoltageVCE(sat) •Satisfactoryoperationperformancesathighefficiency withthelowvoltagepowersupply.

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
2SD1119

SiliconNPNepitaxialplanartype

FEATURES ●Lowcollector-emittersaturationvoltageVCE(sat). ●Satisfactoryoperationperformancesat highefficiencywiththelow-voltagepowersupply.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
2SD1119

SOT-89-3LPlastic-EncapsulateTransistors

FEATURES Lowcollector-emittersaturationvoltageVCE(sat) Satisfactoryoperationperformancesathighefficiencywiththelow voltagepowersupply.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SD1126

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=120V(Min) •HighDCCurrentGain:hFE=1000(Min)@IC=5A •LowSaturationVoltage APPLICATIONS •Designedforpowerswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1126

SiliconNPNTripleDiffused

SiliconNPNTripleDiffused Application Powerswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1126

SiliconNPNTripleDiffused

SiliconNPNTripleDiffused Application Powerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1126K

SiliconNPNTripleDiffused

SiliconNPNTripleDiffused Application Powerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1126K

SiliconNPNTripleDiffused

SiliconNPNTripleDiffused Application Powerswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1127

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ·Collector-EmitterSustainingVoltage:VCEO(SUS)=120V(Min) ·HighDCCurrentGain:hFE=1000(Min)@IC=10A ·LowSaturationVoltage APPLICATIONS ·Designedforpowerswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1127

SILICONNPNTRIPLEDIFFUSEDPOWERSWITCHING

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1128

Highspeedswitchingtransistor

[COLLMERSEMICONDUCTOR] Highspeedswitchingtransistor

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
2SD1128

NPNSILICONDARLINGTONTRANSISTOR(SWITCHINGREGULATORSPWMINVERTERSSOLENOIDANDRELAYDRIVERS)

SWITCHINGREGULATORSPWMINVERTERSSOLENOIDANDRELAYDRIVERS

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS
2SD113

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min) ·HighPowerDissipation ·HighCurrentCapability APPLICATIONS ·Audiopoweramplifier,powerswitchingapplications. ·DC-DCconverterandregulatorapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1133

SiliconNPNTripleDiffused

Application Lowfrequencypoweramplifiercomplementarypairwith2SB857and2SB858

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1133

iscSiliconNPNPowerTransistor

DESCRIPTION ·CollectorCurrent:IC=4A ·LowCollectorSaturationVoltage:VCE(sat)=1.0V(Max)@IC=2A ·HighCollectorPowerDissipation ·ComplementtoType2SB857 APPLICATIONS ·Designedforlowfrequencypoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1133

SiliconNPNTripleDiffused

Application Lowfrequencypoweramplifiercomplementarypairwith2SB857and2SB858

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1133

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Complementtotype2SB857/858 APPLICATIONS ·Forlowfrequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1133K

SiliconNPNTripleDiffused

Application Lowfrequencypoweramplifiercomplementarypairwith2SB857and2SB858

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1134

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Complementtotype2SB857/858 APPLICATIONS ·Forlowfrequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1134

iscSiliconNPNPowerTransistor

DESCRIPTION ·CollectorCurrent:IC=4A ·LowCollectorSaturationVoltage:VCE(sat)=1.0V(Max)@IC=2A ·HighCollectorPowerDissipation ·ComplementtoType2SB858 APPLICATIONS ·Designedforlowfrequencypoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1134

SiliconNPNTripleDiffused

Application Lowfrequencypoweramplifiercomplementarypairwith2SB857and2SB858

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1134

SiliconNPNTripleDiffused

Application Lowfrequencypoweramplifiercomplementarypairwith2SB857and2SB858

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1134K

SiliconNPNTripleDiffused

Application Lowfrequencypoweramplifiercomplementarypairwith2SB857and2SB858

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1135

SiliconNPNTripleDiffused

Application Lowfrequencypoweramplifiercomplementarypairwith2SB859

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1135

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Complementtotype2SB859 APPLICATIONS ·Forlowfrequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1135

SiliconNPNTripleDiffused

Application Lowfrequencypoweramplifiercomplementarypairwith2SB859

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1135

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Complementtotype2SB859 APPLICATIONS ·Forlowfrequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1136

PowerBipolarTransistors

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
2SD1137

PowerBipolarTransistors

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
2SD1137

SiliconNPNTripleDiffused

Application LowfrequencypoweramplifierTVverticaldeflectionoutputcomplementarypairwith2SB860

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1137

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •Complementtotype2SB860 APPLICATIONS •LowfrequencypoweramplifierTVverticaldeflectionoutputapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SD11产品属性

  • 类型

    描述

  • 型号

    2SD11

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-3 130V 10A 100W BEC

2SD11供应商更多...

更新时间：2024-4-27 12:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市芯福林电子科技有限公司
2SD1149-S
PANASONIC/松下
21+
SOT23
13880
公司只售原装,支持实单
询价
深圳市环球伟业电子有限公司
2SD1149-R
Panasonic/Panasonic Corporatio
21+
SOT23
745
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市百视威讯电子科技有限公司
2SD1149-(TX)
23+
N/A
36400
正品授权货源可靠
询价
中天科工半导体（深圳）有限公司
2SD1149
Panasonic
20+
Mini3-G3-B
36800
原装优势主营型号-可开原型号增税票
询价
贸泽芯城（深圳）电子科技有限公司
2SD11491VS
PANASONIC/松下
2021+
SOT-23
9000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
深圳市科芯源微电子有限公司
2SD1149-S
PANASONIC/松下
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市汇莱威科技有限公司
2SD1149
PANASONIC/松下
SOT23
7906200
询价
艾睿国际（香港）有限公司
2SD1149R-(TX)
PANASONIC/松下
2021+
SOT23
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市威尔健半导体有限公司
2SD1149-S
PANASONIC/松下
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
深圳市特顺芯科技有限公司
2SD1149
PANASONIC
SOT-23
87000
询价

2SD11芯片相关品牌

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  • MSYSTEM
  • SSDI
  • WTE

2SD11规格书下载地址

2SD11参数引脚图相关

2SD11数据表相关新闻

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