2SC555晶体管资料

  • 2SC555别名:2SC555三极管、2SC555晶体管、2SC555晶体三极管

  • 2SC555生产厂家:日本东芝公司

  • 2SC555制作材料:Si-NPN

  • 2SC555性质:超高频/特高频 (UHF)_宽频带放大 (A)_TR_输出

  • 2SC555封装形式:直插封装

  • 2SC555极限工作电压:55V

  • 2SC555最大电流允许值:0.4A

  • 2SC555最大工作频率:400MHZ

  • 2SC555引脚数:3

  • 2SC555最大耗散功率:1W

  • 2SC555放大倍数

  • 2SC555图片代号:C-40

  • 2SC555vtest:55

  • 2SC555htest:400000000

  • 2SC555atest:.4

  • 2SC555wtest:1.0001

  • 2SC555代换 2SC555用什么型号代替:BFR36,BFR97,BFW16,BFW17,BLW11,3DA105B,

2SC555价格

参考价格:¥2.6268

型号:2SC5551AE-TD-E 品牌:ON 备注:这里有2SC555多少钱,2024年最近7天走势,今日出价,今日竞价,2SC555批发/采购报价,2SC555行情走势销售排行榜,2SC555报价。
型号 功能描述 生产厂家&企业 LOGO 操作

NPNTRIPLEDIFFUSEDTYPE(HIGHSPEEDSWITCHINGAPPLICATIONFORINVERTERLIGHTINGSYSTEM)

High-SpeedSwitchingApplicationforInverterLightingSystem •SuitableforRCCcircuit(guaranteedsmallcurrenthFE) :hFE=13(min)(IC=1mA) •Highspeed:tr=0.5µs(max),tf=0.3µs(max)(IC=0.24A) •Highbreakdownvoltage:VCEO=400V

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

High-FrequencyMedium-OutputAmplifierApplications

High-FrequencyMedium-OutputAmplifierApplications Features •HighfT:(fT=3.5GHztyp). •Largecurrent:(IC=300mA). •Largeallowablecollectordissipation(1.3Wmax).

SANYOSanyo

三洋三洋电机株式会社

SANYO

High-FrequencyMedium-OutputAmplifierApplications

NPNEpitaxialPlanarSiliconTransistor Features •HighfT:(fT=3.5GHztyp) •Largecurrent:(IC=300mA) •Largeallowablecollectordissipation(1.3Wmax)

SANYOSanyo

三洋三洋电机株式会社

SANYO

RFTransistor

Features •HighfT:(fT=3.5GHztyp) •Largecurrent:(IC=300mA) •Largeallowablecollectordissipation(1.3Wmax)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

RFTransistor

Features •HighfT:(fT=3.5GHztyp) •Largecurrent:(IC=300mA) •Largeallowablecollectordissipation(1.3Wmax)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

RFTransistor

Features •HighfT:(fT=3.5GHztyp) •Largecurrent:(IC=300mA) •Largeallowablecollectordissipation(1.3Wmax)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

High-FrequencyMedium-OutputAmplifierApplications

NPNEpitaxialPlanarSiliconTransistor Features •HighfT:(fT=3.5GHztyp) •Largecurrent:(IC=300mA) •Largeallowablecollectordissipation(1.3Wmax)

SANYOSanyo

三洋三洋电机株式会社

SANYO

SiliconNPNtriplediffusionmesatype(Forhorizontaldeflectionoutput)

PowerTransistors SiliconNPNtriplediffusionmesatype Forhorizontaldeflectionoutput ■Features •Highbreakdownvoltage,andhighreliabilitythroughtheuseofaglasspassivationlayer •High-speedswitching •Widesafeoperationarea

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNtriplediffusionmesatype(Forhorizontaldeflectionoutput)

■Overview Basedonaccumulatedmanufacturingtechnology,thesehorizontaldeflectiontransistorsforTVsofferhighperformanceandcompactdesign.Theycanalsowithstandhighvoltageandmaintainlowloss.Theyalsohaveabroadareaofsafeoperation,despiteanabsolutelyminimalchipareaw

PanasonicPanasonic Corporation

松下松下电器

Panasonic

HorizontalDeflectionTransistorSeriesforTV

■Overview Basedonaccumulatedmanufacturingtechnology,thesehorizontaldeflectiontransistorsforTVsofferhighperformanceandcompactdesign.Theycanalsowithstandhighvoltageandmaintainlowloss.Theyalsohaveabroadareaofsafeoperation,despiteanabsolutelyminimalchipareaw

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage;(1.4×0.8×0.59mm) •Capablelowvoltageoperation;(VCE=1V)

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage;(1.4×0.8×0.59mm) •Capablelowvoltageoperation;(VCE=1V)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage; (1.4×0.8×0.59mm) •Capablelowvoltageoperation; (VCE=1V)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage; (1.4×0.8×0.59mm) •Capablelowvoltageoperation; (VCE=1V)

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage; (1.4×0.8×0.59mm) •Capablelowvoltageoperation; (VCE=1V)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

ForUHFBandLow-NoiseAmplification

SiliconNPNepitaxialplanartype ForUHFbandlow-noiseamplification ■Features •LownoisefigureNF •HightransitionfrequencyfT •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking

PanasonicPanasonic Corporation

松下松下电器

Panasonic

High-SpeedSwitchingApplicationforInverterLighting

文件:152.05 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

High-SpeedSwitchingApplicationforInverterLighting

文件:152.05 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

High-FrequencyMedium-OutputAmplifierApplications

文件:403.15 Kbytes Page:6 Pages

SANYOSanyo

三洋三洋电机株式会社

SANYO

High-FrequencyMedium-OutputAmplifierApplications

文件:403.15 Kbytes Page:6 Pages

SANYOSanyo

三洋三洋电机株式会社

SANYO

封装/外壳:TO-243AA 包装:带 描述:RF TRANS NPN 30V 3.5GHZ PCP 分立半导体产品 晶体管 - 双极(BJT)- 射频

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

iscSiliconNPNPowerTransistor

文件:284.45 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 10V 0.08A MINI3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Panasonic Electronic Components

Panasonic Electronic Components

Panasonic Electronic Components

2SC555产品属性

  • 类型

    描述

  • 型号

    2SC555

  • 制造商

    Toshiba America Electronic Components

  • 功能描述

    Trans GP BJT NPN 400V 1A 3-Pin TO-126IS

更新时间:2024-5-10 18:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PANASONIC/松下
20+
TO-3PF
38900
原装优势主营型号-可开原型号增税票
SOT-723
23+
NA
15659
振宏微专业只做正品,假一罚百!
进口原装
23+
TO-3P
1050
特价库存
HITACHI
23+
NA/
10500
优势代理渠道,原装正品,可全系列订货开增值税票
松下
TO-3PF
608900
原包原标签100%进口原装常备现货!
PAN
2003
TO-3P
3952
只做原装
21+
TO-3P
36520
一级代理/放心采购
HITACHI
6000
面议
19
SOT343
RENESAS-瑞萨
24+25+/26+27+
SOT-523
18800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
PANASONIC
1700V16A65W
79
进口原装-真实库存-价实

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