TO-92Plastic-EncapsulateTransistors

FEATURES ExcellenthFELinearity hFE(2)=100(Typ)atVCE=6V,IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). LowNoise:NF=10dB(Typ).Atf=1KHZ.

SiliconEpitaxialPlanarTransistor

FEATURES ●ExcellenthFElinearity :hFE(2)=100(Typ)atVCE=6V,IC=150Ma :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). ●Lownoise:NF=1Db(Typ).atf=1KHz. ●Complementarypairwith2SA1980S. APPLICATIONS ●Generalsmallsignalamplifier.

Generalsmallsignalamplifier

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=0.25V(Max.) •Lowoutputcapacitance:Cob=2pF(Typ.) •Complementarypairwith2SA1980

NPNTransistorPlastic-EncapsulateTransistors

FEATURE
ExcellenthFELinearity
LowNoise

TRANSISTOR(NPN)

FEATURES ExcellenthFELinearity LowNoise.

NPNSiliconTransistor(Generalsmallsignalamplifier)

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=0.25V(Max.) •Lowoutputcapacitance:Cob=2pF(Typ.) •Complementarypairwith2SA1980