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2SC519晶体管资料

  • 2SC519别名：2SC519三极管、2SC519晶体管、2SC519晶体三极管

  • 2SC519生产厂家：日本东芝公司

  • 2SC519制作材料：Si-NPN

  • 2SC519性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • 2SC519封装形式：直插封装

  • 2SC519极限工作电压：110V

  • 2SC519最大电流允许值：7A

  • 2SC519最大工作频率：10MHZ

  • 2SC519引脚数：2

  • 2SC519最大耗散功率：50W

  • 2SC519放大倍数：

  • 2SC519图片代号：E-44

  • 2SC519vtest：110

  • 2SC519htest：10000000

  • 2SC519atest：7

  • 2SC519wtest：50

  • 2SC519代换 2SC519用什么型号代替：BD245C,BD550,BU109,BU110,BU210,BUY20,BUY77,2N4348,2SD1046,3DK206C,

型号 功能描述 生产厂家&企业 LOGO 操作
2SC5190

SiliconNPNepitaxialplanertype(Forlow-voltagehigh-frequencyamplification)

■Features ●HightransitionfrequencyfT. ●SmallcollectoroutputcapacitanceCob. ●S-Minitypepackage,allowingdownsizingoftheequipmentand automaticinsertionthroughthetapepackingandthemagazine packing.

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SC5191

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR

FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA •MiniMoldPackage EIAJ:SC-59

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5191

LowVoltageOperation,LowPhaseDistortion

DESCRIPTION •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA APPLICATIONS •Designedforuseinlow-noiseandsmalls

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC5191

NPNSILICONRFTRANSISTOR

NPNEPITAXIALSILICONRFTRANSISTOR FORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION 3-PINMINIMOLD FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximum

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5191-T1

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR

FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA •MiniMoldPackage EIAJ:SC-59

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5191-T1B

NPNSILICONRFTRANSISTOR

NPNEPITAXIALSILICONRFTRANSISTOR FORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION 3-PINMINIMOLD FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximum

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5191-T2

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR

FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA •MiniMoldPackage EIAJ:SC-59

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5192

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD

FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA •4-PinMiniMoldPackage EIAJ:SC-61

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5192

SILICONTRANSISTOR

MICROWAVELOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR 4PINSMINIMOLD

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5192R

SILICONTRANSISTOR

MICROWAVELOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR 4PINSMINIMOLD

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5192-T1

SILICONTRANSISTOR

MICROWAVELOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR 4PINSMINIMOLD

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5192-T1

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD

FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA •4-PinMiniMoldPackage EIAJ:SC-61

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5192-T2

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD

FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA •4-PinMiniMoldPackage EIAJ:SC-61

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5192-T2

SILICONTRANSISTOR

MICROWAVELOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR 4PINSMINIMOLD

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5193

NPNSILICONRFTRANSISTOR

NPNEPITAXIALSILICONRFTRANSISTOR FORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION 3-PINSUPERMINIMOLD FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMa

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5193

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORCOMPACTMINIMOLD

FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA •CompactMiniMoldPackage EIAJ:SC-70

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5193-T1

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORCOMPACTMINIMOLD

FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA •CompactMiniMoldPackage EIAJ:SC-70

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5193-T1

NPNSILICONRFTRANSISTOR

NPNEPITAXIALSILICONRFTRANSISTOR FORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION 3-PINSUPERMINIMOLD FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMa

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5193-T2

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORCOMPACTMINIMOLD

FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA •CompactMiniMoldPackage EIAJ:SC-70

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5194

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR

FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA •4-PinCompactMiniMoldPackage

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5194

SILICONTRANSISTOR

MICROWAVELOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA •

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5194-T1

SILICONTRANSISTOR

MICROWAVELOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA •

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5194-T1

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR

FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA •4-PinCompactMiniMoldPackage

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5194-T2

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR

FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA •4-PinCompactMiniMoldPackage

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5194-T2

SILICONTRANSISTOR

MICROWAVELOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA •

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5195

SILICONTRANSISTOR

MICROWAVELOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR FEATURES LowVoltageOperation,LowPhaseDistortion LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.5dBTYP.@VCE=1V,IC=3mA,f=2GHz LargeAbsoluteMaximumCollectorCurrent IC=100mA Supercom

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5195

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR

FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA •SupercompactMiniMoldPackage

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5195-T1

MICROWAVELOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR

FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsoluteMaximumCollectorCurrent IC=100mA •SupercompactMiniMoldPackage

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5196

NPNPLANARSILICONTRANSISTOR(AUDIOPOWERAMPLIFIERDCTODCCONVERTER)

AUDIOPOWERAMPLIFIER DCTODCCONVERTER !HighCurrentCapability !HighPowerDissipation !Complementaryto2SA1939

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS
2SC5196

TOSHIBATransistorSiliconNPNTripleDiffusedType

PowerAmplifierApplications •Complementaryto2SA1939 •Suitableforusein40-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5196

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5196_V01

TOSHIBATransistorSiliconNPNTripleDiffusedType

PowerAmplifierApplications •Complementaryto2SA1939 •Suitableforusein40-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5197

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5197

iscSiliconNPNPowerTransistor

DESCRIPTION ·LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Min)@IC=6A ·GoodLinearityofhFE ·ComplementtoType2SA1940 APPLICATIONS ·Poweramplifierapplications ·Recommendfor55Whighfidelityaudiofrequencyamplifieroutputstageapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC5197

SiliconNPNPowerTransistors

DESCRIPTION ··WithTO-3P(I)package ·Complementtotype2SA1940 APPLICATIONS ·Poweramplifierapplications ·Recommendfor55Whighfidelityaudiofrequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC5197

NPNTRIPLEDIFFUSEDTYPE(POWERAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications •Complementaryto2SA1940 •Suitableforusein55-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5198

NPNTRIPLEDIFFUSEDTYPE(POWERAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5198

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Min)@IC=7A •GoodLinearityofhFE •ComplementtoType2SA1941 APPLICATIONS •Poweramplifierapplications •Recommendfor70Whighfidelityaudiofrequencyamplifieroutputstageapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC5198

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3P(I)package •Complementtotype2SA1941 APPLICATIONS •Poweramplifierapplications •Recommendfor70Whighfidelityaudiofrequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC5198

SiliconNPNtransistorinaTO-3PPlasticPackage.

Descriptions SiliconNPNtransistorinaTO-3PPlasticPackage. Features Recommendfor70Whighfidelityaudiofrequencyamplifieroutputstage,Complementaryto2SA1941. Applications Poweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SC5198

PowerAmplifierApplications

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5198

PowerAmplifierApplications

FEATURES ●Highcollectorvoltage˖VCEO=140V(min) ●Complementaryto2SA1941 ●Recommendedfor70-Whigh-fidelityaudiofrequencyamplifieroutput ●RoHSproduct APPLICATIONS ●PowerAmplifierApplications

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMC
2SC5198

TO-3PPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowCollectorSaturationVoltage ●GoodLinearityofhFE APPLICATIONS ●PowerAmplifierApplications ●Recommendfor70WHighFidelityAudioFrequencyAmplifierOutputStageApplications

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2SC5198

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5198

PowerAmplifierApplications

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5198B

SiliconNPNtriplediffusionplanartransistor

FEATURES •Highbreakdownvoltage,VCEO=140V(min) •Complementaryto2SA1941B •TO-3Ppackagewhichcanbeinstalledtotheheatsinkwithonescrew APPLICATIONS •Suitableforusein70Whighfidelityaudioamplifier’soutputstage

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI
2SC5198OQ

PowerAmplifierApplications

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5198-OQ

PowerAmplifierApplications

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5198-O-W-N-B

PowerAmplifierApplications

FEATURES ●Highcollectorvoltage˖VCEO=140V(min) ●Complementaryto2SA1941 ●Recommendedfor70-Whigh-fidelityaudiofrequencyamplifieroutput ●RoHSproduct APPLICATIONS ●PowerAmplifierApplications

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMC
2SC5198-R

PowerAmplifierApplications

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5199

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PLpackage •Complementtotype2SA1942 APPLICATIONS •Poweramplifierapplications •Recommendedfor80Whighfidelityaudio frequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC5199

NPNTRIPLEDIFFUSEDTYPE(POWERAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=160V(min) •Complementaryto2SA1942 •Suitableforusein80-W highfidelityaudioamplifier’soutputstage.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5199

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5199

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PLpackage •Complementtotype2SA1942 APPLICATIONS •Poweramplifierapplications •Recommendedfor80Whighfidelityaudio frequencyamplifieroutputstage

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC5196

iscSiliconNPNPowerTransistor

文件：253.22 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC5196

SiliconNPNPowerTransistors

文件：162.24 Kbytes Page：4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC5196

NPNTRIPLEDIFFUSEDTYPE(POWERAMPLIFIERAPPLICATIONS)

文件：147.74 Kbytes Page：2 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5196

SiliconNPNPowerTransistors

文件：163.9 Kbytes Page：4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC5196_06

SiliconNPNTripleDiffusedTypePowerAmplifierApplications

文件：120.45 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5197

SiliconNPNTripleDiffusedTypePowerAmplifierApplications

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TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SC519产品属性

  • 类型

    描述

  • 型号

    2SC519

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-3 110V 7A 50W BEC

2SC519供应商更多...

更新时间：2024-5-9 22:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市环球伟业电子有限公司
2SC5193-T1
RENESAS/Renesas Electronics Am
21+
SOT323
7968
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市威雅利发展有限公司
2SC5193-T1
NEC
96+
SOT523
1968
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市博浩通科技有限公司
2SC5193
NEC
23+
SOT323
31000
全新原装
询价
深圳市得捷芯城科技有限公司
2SC5193-T1
NEC
23+
NA/
90
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市维尔达电子有限公司
2SC5193
NEC
2023+
SMD
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
深圳市赛美科科技有限公司
2SC5193
NEC
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市振宏微科技有限公司
2SC5193-T1
SOT-323
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
柒号芯城电子商务(深圳)有限公司
2SC5193-T1
NEC
2023+
SOT523
700000
柒号芯城跟原厂的距离只有0.07公分
询价
深圳市汇莱威科技有限公司
2SC5193
NEC
SOT323
608900
原包原标签100%进口原装常备现货!
询价
深圳廊盛科技有限公司
2SC5193-T1
NEC
2022
SOT-323
80000
原装现货,OEM渠道,欢迎咨询
询价

2SC519芯片相关品牌

  • ADVANTECH
  • AXIOMTEK
  • bookham
  • ITT
  • LEIDITECH
  • Maxim
  • NELLSEMI
  • PYRAMID
  • SOCAY
  • TEMEX
  • TURCK
  • ZETTLER

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    2SC5299，全新原装当天发货或门市自取0755-82732291.

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  • 2SC4617TLR

    深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱：yulin522@126.com0755-8320005015817287769柯先生

    2020-4-22

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