2SC495晶体管资料

  • 2SC495别名:2SC495三极管、2SC495晶体管、2SC495晶体三极管

  • 2SC495生产厂家:日本东芝公司

  • 2SC495制作材料:Si-NPN

  • 2SC495性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SC495封装形式:直插封装

  • 2SC495极限工作电压:70V

  • 2SC495最大电流允许值:1A

  • 2SC495最大工作频率:100MHZ

  • 2SC495引脚数:3

  • 2SC495最大耗散功率:5W

  • 2SC495放大倍数

  • 2SC495图片代号:B-21

  • 2SC495vtest:70

  • 2SC495htest:100000000

  • 2SC495atest:1

  • 2SC495wtest:5

  • 2SC495代换 2SC495用什么型号代替:BD137,BD139,BD169,BD179,BD228,BD237,BD377,BD441,2SD794(A),3DK9D,

型号 功能描述 生产厂家&企业 LOGO 操作

SiliconNPNtriplediffusionplanartype(Forhighbreakdownvoltagehigh-speedswitching)

SiliconNPNtriplediffusionplanartype Forhighbreakdownvoltagehigh-speedswitching ■Features ●High-speedswitching ●HighcollectortobasevoltageVCBO ●Wideareaofsafeoperation(ASO) ●SatisfactorylinearityoffowardcurrenttransferratiohFE ●Dielectricbreakdownvoltageo

PanasonicPanasonic Corporation

松下松下电器

Panasonic

iscSiliconNPNPowerTransistor

DESCRIPTION ●SiliconNPNtriplediffusionplanartype ●HighSpeedSwitching ●100avalanchetested ●MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ●Designedforhighbreakdownvoltagehighspeedswitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SILICONTRANSISTOR

HIGHFREQUENCYLOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR MINIMOLD FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.3pFTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORMINIMOLD

FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.3pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORMINIMOLD

FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.3pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONTRANSISTOR

HIGHFREQUENCYLOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR MINIMOLD FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.3pFTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SILICONTRANSISTOR

HIGHFREQUENCYLOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR MINIMOLD FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.3pFTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORMINIMOLD

FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.3pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORMINIMOLD

FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.4pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORMINIMOLD

FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.4pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORMINIMOLD

FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.4pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONTRANSISTOR

HIGHFREQUENCYLOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR 4PINSMINIMOLD FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.20pFTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD

FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.20pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD

FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.20pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONTRANSISTOR

HIGHFREQUENCYLOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR 4PINSMINIMOLD FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.20pFTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SILICONTRANSISTOR

HIGHFREQUENCYLOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR 4PINSMINIMOLD FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.20pFTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD

FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.20pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD

HIGHFREQUENCYLOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR 4PINSMINIMOLD FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitanceCre=0.3pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNEPITAXIALSILICONRFTRANSISTOR

FEATURES •LowNoise,HighGain •LowVoltageOperation •LowReverseTransferCapacitance Cre=0.3pFTYP. •4-pinminimoldPackage

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NPNEPITAXIALSILICONRFTRANSISTOR

FEATURES •LowNoise,HighGain •LowVoltageOperation •LowReverseTransferCapacitance Cre=0.3pFTYP. •4-pinminimoldPackage

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD

HIGHFREQUENCYLOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR 4PINSMINIMOLD FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitanceCre=0.3pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTOR4PINSMINIMOLD

HIGHFREQUENCYLOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR 4PINSMINIMOLD FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitanceCre=0.3pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORSUPERMINIMOLD

FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.3pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONTRANSISTOR

HIGHFREQUENCYLOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR SUPERMINIMOLD

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SILICONTRANSISTOR

HIGHFREQUENCYLOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR SUPERMINIMOLD

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORSUPERMINIMOLD

FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.3pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORSUPERMINIMOLD

FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitance Cre=0.3pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONTRANSISTOR

HIGHFREQUENCYLOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR SUPERMINIMOLD

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconTransistor

NPNSILICONEPITAXIALTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINTHIN-TYPESMALLMINIMOLDPACKAGE

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORSUPERMINIMOLD

FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitanceCre=0.4pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORSUPERMINIMOLD

FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitanceCre=0.4pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORSUPERMINIMOLD

FEATURES •LowNoise,HighGain •LowVoltageOperation •LowFeedbackCapacitanceCre=0.4pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION4-PINSUPERMINIMOLD

文件:727.74 Kbytes Page:5 Pages

CEL

California Eastern Laboratories

CEL

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION4-PINMINIMOLD

文件:189.53 Kbytes Page:9 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:TO-253-4,TO-253AA 包装:托盘 描述:RF TRANS NPN 6V 12GHZ SOT143 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Laboratories

CEL

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION4-PINSUPERMINIMOLD

文件:727.74 Kbytes Page:5 Pages

CEL

California Eastern Laboratories

CEL

封装/外壳:TO-253-4,TO-253AA 包装:托盘 描述:RF TRANS NPN 6V 12GHZ SOT143 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Laboratories

CEL

2SC495产品属性

  • 类型

    描述

  • 型号

    2SC495

  • 功能描述

    TRANS NPN HF 400VCEO 3A TO-220D

  • RoHS

  • 类别

    分离式半导体产品 >> 晶体管(BJT) - 单路

  • 系列

    -

  • 标准包装

    1

  • 系列

    -

  • 晶体管类型

    NPN 电流 -

  • 集电极(Ic)(最大)

    1A 电压 -

  • 集电极发射极击穿(最大)

    30V

  • Ib、Ic条件下的Vce饱和度(最大)

    200mV @ 100mA,1A 电流 -

  • 集电极截止(最大)

    100nA 在某 Ic、Vce

  • 时的最小直流电流增益(hFE)

    300 @ 500mA,5V 功率 -

  • 最大

    710mW 频率 -

  • 转换

    100MHz

  • 安装类型

    表面贴装

  • 封装/外壳

    TO-236-3,SC-59,SOT-23-3

  • 供应商设备封装

    SOT-23-3(TO-236)

  • 包装

    Digi-Reel®

  • 其它名称

    MMBT489LT1GOSDKR

更新时间:2024-5-10 18:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
20+
SOT-323
43000
原装优势主营型号-可开原型号增税票
SOT-323
23+
NA
15659
振宏微专业只做正品,假一罚百!
NEC
23+
NA/
2305
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
21+
SOT-323
15000
原装现货假一赔十
NEC
22+
SOT323
6521
只做原装正品现货!或订货假一赔十!
NEC
2022
S0T-323
80000
原装现货,OEM渠道,欢迎咨询
NEC
22+23+
SOT-70
30385
绝对原装正品全新进口深圳现货
NEC
20+/21+
SOT323/
9500
全新原装进口现货
NEC
2023+
SOT-323
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
NEC
2008++
SOT-323
8700
新进库存/原装

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