TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications HighVoltage:VCEO=50V HighCurrent:IC=150mA(max) HighhFE:hFE=120to400 ExcellenthFELinearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) Complementaryto2SA1832FT

NPNEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to700 •Complementaryto2SA1832 •Smallpackage

SiliconNPNEpitaxialPlanartype

■Features ●HighVoltageandCurrent ●HighDCCurrentGain ●SmallPackage ●Complementaryto2SA1832

NPNTRANSISTOR

FEATURES: Highvoltageandhighcurrent ExcellenthFElinearity HighhFE Complementaryto2SA1832

0.15A,60VNPNPlasticEncapsulatedTransistor

FEATURES ●HighVoltageandHighCurrent ●HighDCCurrentGain ●Complementaryto2SA1832

SiliconNPNEpitaxialType(PCTprocess)AudioFrequencyGeneralPurposeAmplifierApplications

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