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2SC32晶体管资料
2SC32(A)别名:2SC32(A)三极管、2SC32(A)晶体管、2SC32(A)晶体三极管
2SC32(A)生产厂家:日本日电公司
2SC32(A)制作材料:Si-NPN
2SC32(A)性质:甚高频 (VHF)
2SC32(A)封装形式:直插封装
2SC32(A)极限工作电压:60V
2SC32(A)最大电流允许值:0.2A
2SC32(A)最大工作频率:200MHZ
2SC32(A)引脚数:3
2SC32(A)最大耗散功率:0.75W
2SC32(A)放大倍数:β>40
2SC32(A)图片代号:C-40
2SC32(A)vtest:60
2SC32(A)htest:200000000
- 2SC32(A)atest:.2
2SC32(A)wtest:.75
2SC32(A)代换 2SC32(A)用什么型号代替:BC140,BC141,BC300,BC301,BC302,2N2217,2N3053,3DG130G,
2SC32价格
参考价格:¥12.6935
型号:2SC3263 品牌:Sanken 备注:这里有2SC32多少钱,2024年最近7天走势,今日出价,今日竞价,2SC32批发/采购报价,2SC32行情走势销售排行榜,2SC32报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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NPNSILICONPOWERTRANSISTOR DESCRIPTION The2SC3209isdesignedforuseinTVchromaoutputcircuitsandTVhorizontaldeflectionouptutcircuits. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •Highbreakdownvoltage APPLICATIONS •Forhighspeedswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •Highbreakdownvoltage APPLICATIONS •Forhighspeedswitchingapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •Highbreakdownvoltage APPLICATIONS •Forhighspeedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNTriple-DiffusedJunctionMesaType SiliconNPNTriple-DiffusedJunctionMesaType HighBreakdownVoltage,HighSpeedSwitching | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SiliconNPNPowerTransistor DESCRIPTION •Collector-EmiiterSustainingVoltage-:VCEO(sus)=400V(Min.) •LowCollectorSaturationVoltage:VCE(sat)=1.0V(Max.)@lc-5A •HighSpeedSwitching APPLICATIONS •Designedforhighspeedswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION •Collector-EmiiterSustainingVoltage-:VCEo(sus)=500V(Min.) •LowCollectorSaturationVoltage:VcE(Mt)=1.0V(Max.)@lc=3A •HighSpeedSwitching APPLICATIONS •Designedforhighspeedswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •HighVCBO •Lowcollectorsaturationvoltage APPLICATIONS •Forhighspeedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •HighVCBO •Lowcollectorsaturationvoltage APPLICATIONS •Forhighspeedswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •HighVCBO •Lowcollectorsaturationvoltage APPLICATIONS •Forhighspeedswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •HighVCBO •Lowcollectorsaturationvoltage APPLICATIONS •Forhighspeedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •HighVCBO •Highspeedswitching APPLICATIONS •Forhighspeedswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •HighVCBO •Highspeedswitching APPLICATIONS •Forhighspeedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •HighVCBO •Highspeedswitching APPLICATIONS •Forhighspeedswitchingapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconNPNTriple-DiffusedJunctionMesaType SiliconNPNTriple-DiffusedJunctionMesaType HighBreakdownVoltage,HighSpeedSwitching ■Features ●Highspeedswitching ●Highcollector-basevoltage(VCBO) ●Lowcollector-emittersaturationvoltage(VCE(sat)) ●FullPackpackageforsimplifiedmountingonaheatsinkwithonescrew | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNTriple-DiffusedJunctionMesaType SiliconNPNTriple-DiffusedJunctionMesaType HighBreakdownVoltage,HighSpeedSwitching ■Features ●Highspeedswitching ●Highcollector-basevoltage(VCBO) ●Lowcollector-emittersaturationvoltage(VCE(sat)) ●FullPackpackageforsimplifiedmountingonaheatsinkwithonescrew | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •HighVCBO •Highspeedswitching APPLICATIONS •Forhighspeedswitchingapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •HighVCBO •Highspeedswitching APPLICATIONS •Forhighspeedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •HighVCBO •Highspeedswitching APPLICATIONS •Forhighspeedswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Highvoltage,highspeed APPLICATIONS ·ForswitchingregulatorandDC/DCconverterapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Highvoltage,highspeed APPLICATIONS ·ForswitchingregulatorandDC/DCconverterapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Highvoltage,highspeed APPLICATIONS ·ForswitchingregulatorandDC/DCconverterapplications | SAVANTIC Savantic, Inc. | |||
NPNSILICONEPITAXIALTRANSISTORFOR860MHZWIDEBANDPOWERAMPLIFIERINDUSTRIALUSE NPNSILICONEPITAXIALTRANSISTORFOR860MHZWIDEBANDPOWERAMPLIFIERINDUSTRIALUSE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNSILICONEPITAXIALTRANSISTORFOR860-MHzWIDEBANDPOWERAMPLIFIERINDUSTRIALUSE FEATURES •Highgainandhighpoweroutputat860MHz Pout=52W@VCC=28V,Pin=10W,classAB •Push-pullstructureallowseasydesignofwidebandamplifier •Internalemitterbalanceresistor •Internalimpedancematchingcircuit •Highreliabilityduetogoldelectrodes | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=1.0V(Max.)@lc=5A •HighSwitchingSpeed APPLICATIONS •Designedforpowersupplyandgeneralpurposepoweramplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-247package •Switchingpowertransistor •Highbreakdownvoltage | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-247package •Switchingpowertransistor •Highbreakdownvoltage | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highspeed,highcurrent •Lowsaturationvoltage APPLICATIONS •Forhighcurrenthighspeed,highpowerapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highspeed,highcurrent •Lowsaturationvoltage APPLICATIONS •Forhighcurrenthighspeed,highpowerapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=1.0V(Max.)@lc=10A •HighSwitchingSpeed APPLICATIONS •Designedforpowersupplyandgeneralpurposepoweramplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Fpackage ·Highvoltage:VCEO=300V(min) APPLICATIONS ·ForcolorTVchromaoutputapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Fpackage ·Highvoltage:VCEO=300V(min) APPLICATIONS ·ForcolorTVchromaoutputapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220package •Complementtotype2SA1276 •GoodlinearityofhFE APPLICATIONS •Generalpurposeapplications •Cordlesstelephonetxfinalamplifierapplicationfor1.7MHzsystem | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220package •Complementtotype2SA1276 •GoodlinearityofhFE APPLICATIONS •Generalpurposeapplications •Cordlesstelephonetxfinalamplifierapplicationfor1.7MHzsystem | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage:V(BR)CEO=30V(Min) •GoodLinearityofhFE •ComplementtoType2SA1276 APPLICATIONS •Designedforgeneralpurposeapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterBreakddownVoltage:V(BR)CEO=60V(Min) •LargeCurrentCapability •HighCollectorPowerDissipation APPLICATIONS •DesignedforB/WTVhorizontaldeflectionoutputapplications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220package •Wideareaofsafeoperation APPLICATIONS •Switchingregulators •Generalpurposepoweramplifiers •TVhorizontaloutputapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220package •Wideareaofsafeoperation APPLICATIONS •Switchingregulators •Generalpurposepoweramplifiers •TVhorizontaloutputapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=20(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=20(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=20(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=20(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220package •Highvoltage,highspeed •Lowsaturationvoltage APPLICATIONS •Forhighvoltage,highspeedandhighpowerswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220package •Highvoltage,highspeed •Lowsaturationvoltage APPLICATIONS •Forhighvoltage,highspeedandhighpowerswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SWITCHINGREGULATORANDHIGHVOLTAGESWITCHINGAPPLICATIONS.HIGHSPEEDDC-DCCONVERTERAPPLICATION. FEATURES: -ExcellentSwitchingTimes :tr-1.0μs(Max.),tf-1.0μs(Max.)atIc=4A -HighCollectorBreakdownVoltage:VCEO-400V | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
HIGHCURRENTSWITCHINGAPPLICATIONS. FEATURES: -LowCollectorSaturationVoltage :VCE(sat)0.4V(Max.)(atIc-3A) -HighSpeedSwitchingTime:tstg=1.0μs(Typ.) -Complementaryto25A1279 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
NPNEPITAXIALPLANARTYPE(RFPOWERTRANSISTOR) DESCRIPTION 2SC3240isasiliconNPNepitaxialplanartypetransistorspecificallydesignedforhighpoweramplifiersinHFband. APPLICATION OutputstageoftransmitterinHFbandSSBmobileradiosets | MitsubishiMITSUBISHI electlic 三菱电机 | |||
NPNEPITAXIALPLANARTYPE(RFPOWERTRANSISTOR) DESCRIPTION 2SC3241isasiliconNPNepitaxialplanartypetransistorspecificallydesignedforhighpoweramplifiersinHFband. APPLICATION OutputstageoftransmitterinHFbandSSBmobileradiosets | MitsubishiMITSUBISHI electlic 三菱电机 | |||
SMALL-SIGNALTRANSISTORFORLOWFREQUENCYPOWERAMPLIFYAPPLICATION DESCRIPTION 2SC3243isasiliconNPNepitaxialtypetransistordesignedforrelaydriveorpowersupplyapplication. Complementarywith2SA1238. APPLICATION Relaydrive,powersupplyforaudioequipment,VCR. | ISAHAYAIsahaya Electronics Corporation Isahaya电子公司 | |||
TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.9W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
TO-92MODPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighVoltage ●HighCollectorCurrent ●LowVCE(sat) ●HighCollectorDissipation | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
SMALL-SIGNALTRANSISTORFORSMALLTYPECOLOURTVCHROMAOUTPUTAPLLICATION DESCRIPTION 2SC3249isasiliconNPNtriplediffusedtransistordesignedforcolourTVchromaoutputcircuit,highvoltage,switchingcircuitapplication. APPLICATIONS SmalltypecolourTVchromaoutputcircuit,highvoltageswitchingcircuit. | ISAHAYAIsahaya Electronics Corporation Isahaya电子公司 | |||
SiliconNPNPowerTransistors SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·HighVCEO ·LargePC APPLICATIONS ·ForTVvideooutputamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·HighVCEO ·LargePC APPLICATIONS ·ForTVvideooutputamplifierapplications | SAVANTIC Savantic, Inc. | |||
iscSiliconNPNPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage •GoodLinearityofhFE •HighSwitchingSpeed •ComplementtoType2SA1288 APPLICATIONS •Variousinductancelampdriversforelectricalequipment •Inverters,converters •Poweramplifier •Switchingregulator,dirver | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
60V/5AHigh-SpeedSwitchingApplications 60V/5AHigh-SpeedSwitchingApplications Features •Lowsaturationvoltage. •ExcellentcurrentdependenceofhFE. •Shortswitchingtime. Applications •Variousinductancelampdriversforelectricalequipment. •Inverters,converters(strobo,flash,fluorescentlamplightingcircuit). | SANYOSanyo 三洋三洋电机株式会社 | |||
60V/7AHigh-SpeedSwitchingApplications 60V/7AHigh-SpeedSwitchingApplications Features •Lowsaturationvoltage. •ExcellentcurrentdependenceofhFE. •Shortswitchingtime. Applications •Variousinductancelampdriversforelectricalequipment. •Inverters,converters(strobo,flash,fluorescentlamplightingcircuit). • | SANYOSanyo 三洋三洋电机株式会社 | |||
60V/10AHigh-SpeedSwitchingApplications 60V/10AHigh-SpeedSwitchingApplications Features •Lowsaturationvoltage. •ExcellentcurrentdependenceofhFE. •Shortswitchingtime. Applications •Variousinductancelampdriversforelectricalequipment. •Inverters,converters(strobo,flash,fluorescentlamplightingcircuit). • | SANYOSanyo 三洋三洋电机株式会社 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·Complementtotype2SA1291 ·Lowcollectorsaturationvoltage ·Highspeedswitchingtime APPLICATIONS ·Highcurrentswitchingapplications ·Poweramplifications ·Invertrers,converters | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·Complementtotype2SA1291 ·Lowcollectorsaturationvoltage ·Highspeedswitchingtime APPLICATIONS ·Highcurrentswitchingapplications ·Poweramplifications ·Invertrers,converters | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
2SC32产品属性
- 类型
描述
- 型号
2SC32
- 功能描述
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | TO-5
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
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谏早电子 | Isahaya Electronics |
21+ |
TO-92 |
3800 |
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MITSUBISHI/三菱 |
2021+ |
SMD |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
MITSUBIS |
20+ |
高频管 |
29516 |
高频管全新原装主营-可开原型号增税票 |
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Mitsubishi |
1822+ |
TO-92L |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
MITSUBISH |
TO-92 |
265209 |
假一罚十原包原标签常备现货! |
||||
MITSUBISHI/三菱 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
MITSUBIS |
1922+ |
TO-59 |
8600 |
莱克讯原厂货源每一片都来自原厂原装现货薄利多 |
|||
MITSUBISHI/三菱 |
23+ |
01+ |
6500 |
专注配单,只做原装进口现货 |
|||
ISAHAYA |
2021+ |
TO-92 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
MITSUBISH |
23+ |
TO-92 |
50000 |
全新原装正品现货,支持订货 |
2SC32规格书下载地址
2SC32参数引脚图相关
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- 2SC3185
- 2SC3184
- 2SC3183
- 2SC3182
- 2SC3181
- 2SC3180
- 2SC3179
- 2SC3178
- 2SC3176
2SC32数据表相关新闻
2SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.
2021-3-232SC380TM-O
只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性属性值搜索类似 制造商:Toshiba 产品种类:双极晶体管-双极结型晶体管(BJT) 系列:2SC3671 技术:Si 商标:Toshiba 产品类型:BJTs-BipolarTransistors 子类别:Transistors
2020-11-52SC2334中文资料
2SC2334中文资料
2019-2-182SC2859中文资料
2SC2859中文资料
2019-2-18
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