2SC32晶体管资料

  • 2SC32(A)别名:2SC32(A)三极管、2SC32(A)晶体管、2SC32(A)晶体三极管

  • 2SC32(A)生产厂家:日本日电公司

  • 2SC32(A)制作材料:Si-NPN

  • 2SC32(A)性质:甚高频 (VHF)

  • 2SC32(A)封装形式:直插封装

  • 2SC32(A)极限工作电压:60V

  • 2SC32(A)最大电流允许值:0.2A

  • 2SC32(A)最大工作频率:200MHZ

  • 2SC32(A)引脚数:3

  • 2SC32(A)最大耗散功率:0.75W

  • 2SC32(A)放大倍数:β>40

  • 2SC32(A)图片代号:C-40

  • 2SC32(A)vtest:60

  • 2SC32(A)htest:200000000

  • 2SC32(A)atest:.2

  • 2SC32(A)wtest:.75

  • 2SC32(A)代换 2SC32(A)用什么型号代替:BC140,BC141,BC300,BC301,BC302,2N2217,2N3053,3DG130G,

2SC32价格

参考价格:¥12.6935

型号:2SC3263 品牌:Sanken 备注:这里有2SC32多少钱,2024年最近7天走势,今日出价,今日竞价,2SC32批发/采购报价,2SC32行情走势销售排行榜,2SC32报价。
型号 功能描述 生产厂家&企业 LOGO 操作

NPNSILICONPOWERTRANSISTOR

DESCRIPTION The2SC3209isdesignedforuseinTVchromaoutputcircuitsandTVhorizontaldeflectionouptutcircuits.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •Highbreakdownvoltage APPLICATIONS •Forhighspeedswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •Highbreakdownvoltage APPLICATIONS •Forhighspeedswitchingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •Highbreakdownvoltage APPLICATIONS •Forhighspeedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNTriple-DiffusedJunctionMesaType

SiliconNPNTriple-DiffusedJunctionMesaType HighBreakdownVoltage,HighSpeedSwitching

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

SiliconNPNPowerTransistor

DESCRIPTION •Collector-EmiiterSustainingVoltage-:VCEO(sus)=400V(Min.) •LowCollectorSaturationVoltage:VCE(sat)=1.0V(Max.)@lc-5A •HighSpeedSwitching APPLICATIONS •Designedforhighspeedswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistor

DESCRIPTION •Collector-EmiiterSustainingVoltage-:VCEo(sus)=500V(Min.) •LowCollectorSaturationVoltage:VcE(Mt)=1.0V(Max.)@lc=3A •HighSpeedSwitching APPLICATIONS •Designedforhighspeedswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •HighVCBO •Lowcollectorsaturationvoltage APPLICATIONS •Forhighspeedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •HighVCBO •Lowcollectorsaturationvoltage APPLICATIONS •Forhighspeedswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •HighVCBO •Lowcollectorsaturationvoltage APPLICATIONS •Forhighspeedswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •HighVCBO •Lowcollectorsaturationvoltage APPLICATIONS •Forhighspeedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •HighVCBO •Highspeedswitching APPLICATIONS •Forhighspeedswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •HighVCBO •Highspeedswitching APPLICATIONS •Forhighspeedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •HighVCBO •Highspeedswitching APPLICATIONS •Forhighspeedswitchingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconNPNTriple-DiffusedJunctionMesaType

SiliconNPNTriple-DiffusedJunctionMesaType HighBreakdownVoltage,HighSpeedSwitching ■Features ●Highspeedswitching ●Highcollector-basevoltage(VCBO) ●Lowcollector-emittersaturationvoltage(VCE(sat)) ●FullPackpackageforsimplifiedmountingonaheatsinkwithonescrew

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNTriple-DiffusedJunctionMesaType

SiliconNPNTriple-DiffusedJunctionMesaType HighBreakdownVoltage,HighSpeedSwitching ■Features ●Highspeedswitching ●Highcollector-basevoltage(VCBO) ●Lowcollector-emittersaturationvoltage(VCE(sat)) ●FullPackpackageforsimplifiedmountingonaheatsinkwithonescrew

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •HighVCBO •Highspeedswitching APPLICATIONS •Forhighspeedswitchingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •HighVCBO •Highspeedswitching APPLICATIONS •Forhighspeedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Lowcollectorsaturationvoltage •HighVCBO •Highspeedswitching APPLICATIONS •Forhighspeedswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·Highvoltage,highspeed APPLICATIONS ·ForswitchingregulatorandDC/DCconverterapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·Highvoltage,highspeed APPLICATIONS ·ForswitchingregulatorandDC/DCconverterapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·Highvoltage,highspeed APPLICATIONS ·ForswitchingregulatorandDC/DCconverterapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

NPNSILICONEPITAXIALTRANSISTORFOR860MHZWIDEBANDPOWERAMPLIFIERINDUSTRIALUSE

NPNSILICONEPITAXIALTRANSISTORFOR860MHZWIDEBANDPOWERAMPLIFIERINDUSTRIALUSE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNSILICONEPITAXIALTRANSISTORFOR860-MHzWIDEBANDPOWERAMPLIFIERINDUSTRIALUSE

FEATURES •Highgainandhighpoweroutputat860MHz Pout=52W@VCC=28V,Pin=10W,classAB •Push-pullstructureallowseasydesignofwidebandamplifier •Internalemitterbalanceresistor •Internalimpedancematchingcircuit •Highreliabilityduetogoldelectrodes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNPowerTransistor

DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=1.0V(Max.)@lc=5A •HighSwitchingSpeed APPLICATIONS •Designedforpowersupplyandgeneralpurposepoweramplifierapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-247package •Switchingpowertransistor •Highbreakdownvoltage

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-247package •Switchingpowertransistor •Highbreakdownvoltage

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highspeed,highcurrent •Lowsaturationvoltage APPLICATIONS •Forhighcurrenthighspeed,highpowerapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highspeed,highcurrent •Lowsaturationvoltage APPLICATIONS •Forhighcurrenthighspeed,highpowerapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=1.0V(Max.)@lc=10A •HighSwitchingSpeed APPLICATIONS •Designedforpowersupplyandgeneralpurposepoweramplifierapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Highvoltage:VCEO=300V(min) APPLICATIONS ·ForcolorTVchromaoutputapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Highvoltage:VCEO=300V(min) APPLICATIONS ·ForcolorTVchromaoutputapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220package •Complementtotype2SA1276 •GoodlinearityofhFE APPLICATIONS •Generalpurposeapplications •Cordlesstelephonetxfinalamplifierapplicationfor1.7MHzsystem

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220package •Complementtotype2SA1276 •GoodlinearityofhFE APPLICATIONS •Generalpurposeapplications •Cordlesstelephonetxfinalamplifierapplicationfor1.7MHzsystem

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage:V(BR)CEO=30V(Min) •GoodLinearityofhFE •ComplementtoType2SA1276 APPLICATIONS •Designedforgeneralpurposeapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakddownVoltage:V(BR)CEO=60V(Min) •LargeCurrentCapability •HighCollectorPowerDissipation APPLICATIONS •DesignedforB/WTVhorizontaldeflectionoutputapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220package •Wideareaofsafeoperation APPLICATIONS •Switchingregulators •Generalpurposepoweramplifiers •TVhorizontaloutputapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220package •Wideareaofsafeoperation APPLICATIONS •Switchingregulators •Generalpurposepoweramplifiers •TVhorizontaloutputapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=20(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=20(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=20(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=20(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220package •Highvoltage,highspeed •Lowsaturationvoltage APPLICATIONS •Forhighvoltage,highspeedandhighpowerswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220package •Highvoltage,highspeed •Lowsaturationvoltage APPLICATIONS •Forhighvoltage,highspeedandhighpowerswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SWITCHINGREGULATORANDHIGHVOLTAGESWITCHINGAPPLICATIONS.HIGHSPEEDDC-DCCONVERTERAPPLICATION.

FEATURES: -ExcellentSwitchingTimes :tr-1.0μs(Max.),tf-1.0μs(Max.)atIc=4A -HighCollectorBreakdownVoltage:VCEO-400V

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

HIGHCURRENTSWITCHINGAPPLICATIONS.

FEATURES: -LowCollectorSaturationVoltage :VCE(sat)0.4V(Max.)(atIc-3A) -HighSpeedSwitchingTime:tstg=1.0μs(Typ.) -Complementaryto25A1279

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NPNEPITAXIALPLANARTYPE(RFPOWERTRANSISTOR)

DESCRIPTION 2SC3240isasiliconNPNepitaxialplanartypetransistorspecificallydesignedforhighpoweramplifiersinHFband. APPLICATION OutputstageoftransmitterinHFbandSSBmobileradiosets

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi

NPNEPITAXIALPLANARTYPE(RFPOWERTRANSISTOR)

DESCRIPTION 2SC3241isasiliconNPNepitaxialplanartypetransistorspecificallydesignedforhighpoweramplifiersinHFband. APPLICATION OutputstageoftransmitterinHFbandSSBmobileradiosets

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi

SMALL-SIGNALTRANSISTORFORLOWFREQUENCYPOWERAMPLIFYAPPLICATION

DESCRIPTION 2SC3243isasiliconNPNepitaxialtypetransistordesignedforrelaydriveorpowersupplyapplication. Complementarywith2SA1238. APPLICATION Relaydrive,powersupplyforaudioequipment,VCR.

ISAHAYAIsahaya Electronics Corporation

Isahaya电子公司

ISAHAYA

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.9W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

TO-92MODPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighVoltage ●HighCollectorCurrent ●LowVCE(sat) ●HighCollectorDissipation

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

SMALL-SIGNALTRANSISTORFORSMALLTYPECOLOURTVCHROMAOUTPUTAPLLICATION

DESCRIPTION 2SC3249isasiliconNPNtriplediffusedtransistordesignedforcolourTVchromaoutputcircuit,highvoltage,switchingcircuitapplication. APPLICATIONS SmalltypecolourTVchromaoutputcircuit,highvoltageswitchingcircuit.

ISAHAYAIsahaya Electronics Corporation

Isahaya电子公司

ISAHAYA

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·HighVCEO ·LargePC APPLICATIONS ·ForTVvideooutputamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·HighVCEO ·LargePC APPLICATIONS ·ForTVvideooutputamplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollectorSaturationVoltage •GoodLinearityofhFE •HighSwitchingSpeed •ComplementtoType2SA1288 APPLICATIONS •Variousinductancelampdriversforelectricalequipment •Inverters,converters •Poweramplifier •Switchingregulator,dirver

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

60V/5AHigh-SpeedSwitchingApplications

60V/5AHigh-SpeedSwitchingApplications Features •Lowsaturationvoltage. •ExcellentcurrentdependenceofhFE. •Shortswitchingtime. Applications •Variousinductancelampdriversforelectricalequipment. •Inverters,converters(strobo,flash,fluorescentlamplightingcircuit).

SANYOSanyo

三洋三洋电机株式会社

SANYO

60V/7AHigh-SpeedSwitchingApplications

60V/7AHigh-SpeedSwitchingApplications Features •Lowsaturationvoltage. •ExcellentcurrentdependenceofhFE. •Shortswitchingtime. Applications •Variousinductancelampdriversforelectricalequipment. •Inverters,converters(strobo,flash,fluorescentlamplightingcircuit). •

SANYOSanyo

三洋三洋电机株式会社

SANYO

60V/10AHigh-SpeedSwitchingApplications

60V/10AHigh-SpeedSwitchingApplications Features •Lowsaturationvoltage. •ExcellentcurrentdependenceofhFE. •Shortswitchingtime. Applications •Variousinductancelampdriversforelectricalequipment. •Inverters,converters(strobo,flash,fluorescentlamplightingcircuit). •

SANYOSanyo

三洋三洋电机株式会社

SANYO

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220package ·Complementtotype2SA1291 ·Lowcollectorsaturationvoltage ·Highspeedswitchingtime APPLICATIONS ·Highcurrentswitchingapplications ·Poweramplifications ·Invertrers,converters

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220package ·Complementtotype2SA1291 ·Lowcollectorsaturationvoltage ·Highspeedswitchingtime APPLICATIONS ·Highcurrentswitchingapplications ·Poweramplifications ·Invertrers,converters

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SC32产品属性

  • 类型

    描述

  • 型号

    2SC32

  • 功能描述

    TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | TO-5

更新时间:2024-6-1 11:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
谏早电子 | Isahaya Electronics
21+
TO-92
3800
MITSUBISHI/三菱
2021+
SMD
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
MITSUBIS
20+
高频管
29516
高频管全新原装主营-可开原型号增税票
Mitsubishi
1822+
TO-92L
6852
只做原装正品假一赔十为客户做到零风险!!
MITSUBISH
TO-92
265209
假一罚十原包原标签常备现货!
MITSUBISHI/三菱
23+
TO-59
8510
原装正品代理渠道价格优势
MITSUBIS
1922+
TO-59
8600
莱克讯原厂货源每一片都来自原厂原装现货薄利多
MITSUBISHI/三菱
23+
01+
6500
专注配单,只做原装进口现货
ISAHAYA
2021+
TO-92
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
MITSUBISH
23+
TO-92
50000
全新原装正品现货,支持订货

2SC32芯片相关品牌

  • ARIES
  • Bourns
  • FERROXCUBE
  • Fuji
  • KOA
  • MEANWELL
  • PREDIP
  • RFE
  • SMC
  • TRUMPOWER
  • WPI
  • YANGJIE

2SC32数据表相关新闻

  • 2SC2712G-SOT23.3R-Y-TG

    2SC2712G-SOT23.3R-Y-TG

    2023-1-31
  • 2SC3356

    2SC3356,全新原装现货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.

    2021-3-23
  • 2SC380TM-O

    只做原装假一赔十

    2020-11-14
  • 2SC3671-B,T2F(J

    产品属性属性值搜索类似 制造商:Toshiba 产品种类:双极晶体管-双极结型晶体管(BJT) 系列:2SC3671 技术:Si 商标:Toshiba 产品类型:BJTs-BipolarTransistors 子类别:Transistors

    2020-11-5
  • 2SC2334中文资料

    2SC2334中文资料

    2019-2-18
  • 2SC2859中文资料

    2SC2859中文资料

    2019-2-18