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2SB127晶体管资料
2SB127别名:2SB127三极管、2SB127晶体管、2SB127晶体三极管
2SB127生产厂家:日本松下公司
2SB127制作材料:Ge-PNP
2SB127性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2SB127封装形式:直插封装
2SB127极限工作电压:32V
2SB127最大电流允许值:3.5A
2SB127最大工作频率:<1MHZ或未知
2SB127引脚数:2
2SB127最大耗散功率:30W
2SB127放大倍数:
2SB127图片代号:E-44
2SB127vtest:32
2SB127htest:999900
- 2SB127atest:3.5
2SB127wtest:30
2SB127代换 2SB127用什么型号代替:AD149,AD166,AD167,AL102,AL103,2N2137,2N2142,3AD56A,
2SB127价格
参考价格:¥2.3030
型号:2SB1275TLP 品牌:Rohm 备注:这里有2SB127多少钱,2024年最近7天走势,今日出价,今日竞价,2SB127批发/采购报价,2SB127行情走势销售排行榜,2SB127报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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High-CurrentSwitchingApplications High-CurrentSwitchingApplications Features ·Suitableforsetswhoseheightisrestricted. ·Lowcollectortoemittersaturationvoltage. ·Largecurrentcapacity. Applications ·Suitableforrelaydrivers,high-speedinverters,converters,andothergeneralhigh-currentsw | SANYOSanyo 三洋三洋电机株式会社 | |||
High-CurrentSwitchingApplications High-CurrentSwitchingApplications Features ·Suitableforsetswhoseheightisrestricted. ·Lowcollectortoemittersaturationvoltage. ·Largecurrentcapacity. Applications ·Suitableforrelaydrivers,high-speedinverters,converters,andothergeneralhigh-currentsw | SANYOSanyo 三洋三洋电机株式会社 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-126package ·DARLINGTON ·HighDCcurrentgain APPLICATIONS ·Forlowfrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-126package ·DARLINGTON ·HighDCcurrentgain APPLICATIONS ·Forlowfrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220package ·Lowcollectorsaturationvoltage APPLICATIONS ·Designedforuseinlowfrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220package ·Lowcollectorsaturationvoltage APPLICATIONS ·Designedforuseinlowfrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
TO-220-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●WideASO(AdoptionofMBITProcess). ●LowSaturationVoltage. ●HighReliability. ●HighBreakdownVoltage. | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
GeneralPurposeSwitchingandAmplification. FEATURES •GeneralPurposeSwitchingandAmplification. •WideASO(AdoptionofMBITProcess) •LowSaturationVoltage. | SECOS SeCoS Halbleitertechnologie GmbH | |||
SiliconPNPPowerTransistor DESCRIPTION •HighReliability •LowCollectorSaturationVoltage :VCE(sat)=-1.0V(Max)@Ic=-2A •WideAreaofSafeOperation APPLICATIONS •Designedforlowfrequencypoweramplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPtransistorinaTO-220FPlasticPackage Descriptions SiliconPNPtransistorinaTO-220FPlasticPackage. Features HighVCEO,lowsaturationvoltage,wideASO. Applications Lowfrequencypoweramplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fpackage ·Complementtotype2SD1913 ·Highreliability. ·Highbreakdownvoltage ·Lowsaturationvoltage. ·Wideareaofsafeoperation APPLICATIONS ·60V/3Alow-frequencypoweramplifier ·Generalpoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
60V/3ALow-FrequencyPowerAmplifierApplications 60V/3ALow-FrequencyPowerAmplifierApplications Applications •Generalpoweramplifier. Features •WideASO(AdoptionofMBITprocess). •Lowsaturationvoltage. •Highreliability. •Highbreakdownvoltage. •Micalesspackagefacilitatingmounting. | SANYOSanyo 三洋三洋电机株式会社 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fpackage ·Complementtotype2SD1913 ·Highreliability. ·Highbreakdownvoltage ·Lowsaturationvoltage. ·Wideareaofsafeoperation APPLICATIONS ·60V/3Alow-frequencypoweramplifier·Generalpoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TO-220-3LPlastic-EncapsulateTransistors FEATURES WideASO(AdoptionofMBITProcess). LowSaturationVoltage. HighReliability. HighBreakdownVoltage. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
iscSiliconPNPPowerTransistor DESCRIPTION ·Lowsaturationvoltage. ·Highreliability ·Highbreakdownvoltage APPLICATIONS ·DesignedforDC-DCconverter,emergencylighting inverterandgeneralpurposeapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerTransistor(-160V,-1.5A) Features 1)Highbreakdownvoltage.(BVCEO=-160V) 2)Lowcollectoroutputcapacitance. (Typ.30pFatVCB=10V) 3)Hightransitionfrequency.(fT=50MHZ) 4)Complementsthe2SD1918/2SD1857A. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
POWERTRANSISTOR EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor(32V,2A) FTR•FTL Lowprofileflat-packageforlimitedspeceapplications. Tapetypecanbeusedonautomatedline.Bulktypeisalsoavailable. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MEDIUMPOWERTRANSISTOR(-32V,-2A)
| ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumpowerTransistor(32V,2A) Features 1)LowVCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MEDIUMPOWERTRANSISTOR(-32V,-2A)
| ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MEDIUMPOWERTRANSISTOR(-32V,-2A)
| ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MEDIUMPOWERTRANSISTOR(-32V,-2A)
| ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
EpitaxialPlanarPNPSiliconTranslstors MediumPowerAmp. EpitaxialPlanarSiliconTransistor Features 1)CompactFTRpackagedeliveringhighpower:Pc=750mW 2)Hihgbreakdownvoltage:VCEO=-80V | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistors 文件:100.35 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistor 文件:133.15 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
2SB1273 文件:104.39 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:255.55 Kbytes Page:4 Pages | SAVANTIC Savantic, Inc. | |||
PNPPlasticEncapsulatedTransistor 文件:104.2 Kbytes Page:1 Pages | SECOS SeCoS Halbleitertechnologie GmbH | |||
iscSiliconPNPPowerTransistor 文件:272.4 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PNP-1.5A-160VMiddlePowerTransistor 文件:471.94 Kbytes Page:7 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PowerTransistor(-160V,-1.5A) 文件:175.18 Kbytes Page:4 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PowerTransistor 文件:39.19 Kbytes Page:1 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PowerTransistor(-160V,-1.5A) 文件:175.18 Kbytes Page:4 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNP-1.5A-160VMiddlePowerTransistor 文件:471.94 Kbytes Page:7 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNPTransistors 文件:1.61554 Mbytes Page:4 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.61554 Mbytes Page:4 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 160V 1.5A CPT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |
2SB127产品属性
- 类型
描述
- 型号
2SB127
- 功能描述
2SB1274 N9H1D
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
22+ |
TO126 |
100000 |
代理渠道/只做原装/可含税 |
||||
SANYO/三洋 |
23+ |
NA/ |
7050 |
原装现货,当天可交货,原型号开票 |
|||
ROHM |
1738+ |
TO-126 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
SANYO |
TO-220 |
608900 |
原包原标签100%进口原装常备现货! |
||||
SAY |
08PB |
90000 |
|||||
SANYO |
2020+ |
TO-263 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
SANYO-三洋 |
24+25+/26+27+ |
TO-262-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
SANYO三洋 |
17+ |
TO-220 |
6200 |
||||
ROHM/罗姆 |
22+ |
TO-126 |
25000 |
只做原装进口现货,专注配单 |
|||
ROHM |
24+ |
TO-126 |
35628 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
2SB127规格书下载地址
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2SB127数据表相关新闻
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2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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