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2SA1242晶体管资料
2SA1242别名：2SA1242三极管、2SA1242晶体管、2SA1242晶体三极管
2SA1242生产厂家：日本东芝公司
2SA1242制作材料：Si-PNP
2SA1242性质：开关管 （S）_功率放大 （L）
2SA1242封装形式：直插封装
2SA1242极限工作电压：35V
2SA1242最大电流允许值：5A
2SA1242最大工作频率：170MHZ
2SA1242引脚数：3
2SA1242最大耗散功率：10W
2SA1242放大倍数：
2SA1242图片代号：A-80
2SA1242vtest：35
2SA1242htest：170000000
- 2SA1242atest：5
2SA1242wtest：10
2SA1242代换 2SA1242用什么型号代替：2SA1244,2SA1401,2SB967,2SB1203,2SB1204,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SA1242 | SiliconPNPtransistorinaTO-252PlasticPackage. Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features ExcellenthFElinearity,lowVCE(sat),highPC. Applications Strobeflashapplications,mediumpoweramplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  |   |
2SA1242 | SiliconPNPEpitaxialType FEATURES ●ExcellenthFElinearity. ●Lowcollectorsaturationvoltage. ●Highpowerdissipation. APPLICATIONS ●StrobeFlashApplications. ●MediumPowerAmplifierApplications. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 |  | |
2SA1242 | iscSiliconPNPPowerTransistor DESCRIPTION •hFE=100-320(IC=-0.5A;VCE=-2V) •hFE=70(Min)(IC=-4A;VCE=-2V) •LowCollector-EmitterSaturationVoltage-:VCE(sat)=-1.0V(Max)(IC=-4A;IB=-0.1A) •·HighPowerDissipation-:PC=10W@TC=25℃,PC=10W@Ta=25℃ •MinimumLot-to-Lotvariationsforrobustdeviceperformanceand | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
2SA1242 | TO-251-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●StrobeFlashApplicationsMediumPowerAmplifierApplications ●ExcellenthFELinearity :hFE(1)=100to320(VCE=−2V,IC=−0.5A) :hFE(2)=70(min)(VCE=−2V,IC=−4A) ●LowCollectorSaturationVoltage :VCE(sat)=−1.0V(max)(IC=− | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | |
2SA1242 | BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  | |
2SA1242 | SiliconPNPPowerTransistor DESCRIPTION ·hFE=100-320(IC=-0.5A;VCE=-2V) ·hFE=70(Min)(IC=-4A;VCE=-2V) ·LowCollector-EmitterSaturationVoltage- :VCE(sat)=-1.0V(Max)(IC=-4A;IB=-0.1A) ··HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ APPLICATIONS ·Formediumpoweramplifierandstrobeflashapplicati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
2SA1242 | SiliconPNPPowerTransistor DESCRIPTION ·hFE=100-320(IC=-0.5A;VCE=-2V) ·hFE=70(Min)(IC=-4A;VCE=-2V) ·LowCollector-EmitterSaturationVoltage- :VCE(sat)=-1.0V(Max)(IC=-4A;IB=-0.1A) ··HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ APPLICATIONS ·Formediumpoweramplifierandstrobeflashapplicati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
2SA1242 | TRANSISOTOR(STROBEFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS) StrobeFlashApplications MediumPowerAmplifierApplications •ExcellenthFElinearity :hFE(1)=100to320(VCE=−2V,IC=−0.5A) :hFE(2)=70(min)(VCE=−2V,IC=−4A) •Lowcollectorsaturationvoltage :VCE(sat)=−1.0V(max)(IC=−4A,IB=−0.1A) •Highpow | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
2SA1242 | StrobeFlashApplicationsMediumPowerAmplifierApplications 文件：161.07 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
2SA1242 | StrobeFlashApplicationsMediumPowerAmplifierApplications 文件：158 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
SiliconPNPPowerTransistor DESCRIPTION ·hFE=100-320(IC=-0.5A;VCE=-2V) ·hFE=70(Min)(IC=-4A;VCE=-2V) ·LowCollector-EmitterSaturationVoltage- :VCE(sat)=-1.0V(Max)(IC=-4A;IB=-0.1A) ··HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ APPLICATIONS ·Formediumpoweramplifierandstrobeflashapplicati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconPNPPowerTransistor DESCRIPTION ·hFE=100-320(IC=-0.5A;VCE=-2V) ·hFE=70(Min)(IC=-4A;VCE=-2V) ·LowCollector-EmitterSaturationVoltage- :VCE(sat)=-1.0V(Max)(IC=-4A;IB=-0.1A) ··HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ APPLICATIONS ·Formediumpoweramplifierandstrobeflashapplicati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
StrobeFlashApplicationsMediumPowerAmplifierApplications 文件：158 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
StrobeFlashApplicationsMediumPowerAmplifierApplications 文件：161.07 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装 描述：TRANS PNP 20V 5A PW-MOLD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage |  | |
2SA1242产品属性
- 类型
描述
- 型号
2SA1242
- 制造商
Toshiba
- 功能描述
PNP Cut Tape
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
23+ |
TO-252 |
9526 |
||||
TOSHIBA/东芝 |
21+ |
TO-251 |
7232 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CJ品牌 |
2023+ |
TO252贴片三极管 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
CJ/长电 |
22+ |
TO-251 |
12800 |
本公司只做进口原装!优势低价出售! |
|||
TOSHIBA/东芝 |
23+ |
NA/ |
95 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TOSHIBA |
21+ |
TO-251 |
56000 |
公司进口原装现货 批量特价支持 |
|||
CJ |
20+ |
TO252 |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
CJ/长电 |
24+ |
TO252 |
990000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA |
2020+ |
TO-252 |
34000 |
100%进口原装现货，价格优势特价热卖，量大可订货，鑫宇杨只做原装， |
|||
TOSHIBA/东芝 |
2048+ |
TO-251 |
9851 |
只做原装正品现货!或订货假一赔十! |
2SA1242芯片相关品牌
2SA1242规格书下载地址
2SA1242参数引脚图相关
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DdatasheetPDF页码索引
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