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2SA1036晶体管资料
2SA1036(K)别名:2SA1036(K)三极管、2SA1036(K)晶体管、2SA1036(K)晶体三极管
2SA1036(K)生产厂家:TOY
2SA1036(K)制作材料:Si-PNP
2SA1036(K)性质:表面帖装型 (SMD)
2SA1036(K)封装形式:直插封装
2SA1036(K)极限工作电压:40V
2SA1036(K)最大电流允许值:0.5A
2SA1036(K)最大工作频率:200MHZ
2SA1036(K)引脚数:3
2SA1036(K)最大耗散功率:
2SA1036(K)放大倍数:
2SA1036(K)图片代号:H-15
2SA1036(K)vtest:40
2SA1036(K)htest:200000000
- 2SA1036(K)atest:.5
2SA1036(K)wtest:0
2SA1036(K)代换 2SA1036(K)用什么型号代替:BC807,BCW67,BCW78,BCX17,2SA1313,3CG180C,
2SA1036价格
参考价格:¥0.2189
型号:2SA1036KT146Q 品牌:Rohm 备注:这里有2SA1036多少钱,2024年最近7天走势,今日出价,今日竞价,2SA1036批发/采购报价,2SA1036行情走势销售排行榜,2SA1036报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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2SA1036 | SiliconEpitaxialPlanarTransistor FEATURES ●LargeIC.ICMAX.=-500mA. ●LowVCE(sat).Idealforlow-voltageoperation. APPLICATIONS ●Idealforlow-voltageoperation. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
2SA1036 | PNPSiliconGeneralPurposeTransistor FEATURES .LargeIC,ICMAX.=-500mA .LowVCE(Sat),Idealforlow-voltageoperation .SmallPackage. .RoHSCompliantProduct | SECOS SeCoS Halbleitertechnologie GmbH | ||
2SA1036 | TRANSISTOR(PNP) FEATURES ∙LargeIC.ICMax.=-500mA ∙LowVCE(sat).Idealforlow-voltageoperation. | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | ||
2SA1036 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●LargeIC.ICMax.=-500mA ●LowVCE(sat).Idealforlow-voltageoperation. | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | ||
2SA1036 | Plastic-EncapsulateTransistors FEATURES LargeIC.ICMax.=-500mA LowVCE(sat).Idealforlow-voltageoperation. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | ||
2SA1036 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES •LargeIC.ICMax.=-500mA •LowVCE(sat).Idealforlow-voltageoperation. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
2SA1036 | SiliconEpitaxialPlanarTransistor FEATURES ●LargeIC.ICMAX.=-500mA. ●LowVCE(sat).Idealforlow-voltageoperation. ●Complementsthe2SC2411. APPLICATIONS ●Idealforlow-voltageoperation. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
2SA1036 | SiliconEpitaxialPlanarTransistor 文件:209.75 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
2SA1036 | SiliconEpitaxialPlanarTransistor 文件:167.49 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
2SA1036 | PNPSiliconGeneralPurposeTransistor 文件:700.51 Kbytes Page:2 Pages | SECOS SeCoS Halbleitertechnologie GmbH | ||
PNPGeneralPurposeTransistors PNPGeneralPurposeTransistors P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | |||
SiliconPNPtransistorinaSOT-23PlasticPackage Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features LargeIclowVce(sat),complementarypairwiththe2SC2411K. Applications Mediumpoweramplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
PNPSiliconGeneralPurposeTransistor FEATURES RoHSCompliantProduct LargeIC.ICMax.=-500mA LowVCE(sat).Idealforlow-voltageoperation. | SECOS SeCoS Halbleitertechnologie GmbH | |||
MediumPowerTransistor Features ●LargeIC.ICMax.=-500mA ●LowVCE(sat).Idealforlow-voltageoperation. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
MediumPowerTransistor Features 1)LargeIC. ICMax.=500mA 2)LowVCE(sat).Idealforlow-voltageoperation. 3)Complementsthe2SC2411K/2SC1741S/2SC4097. Structure EpitaxialplanartypePNPsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor Features 1)LargeIC. ICMax.=500mA 2)LowVCE(sat).Idealforlow-voltageoperation. 3)Complementsthe2SC2411K/2SC1741S/2SC4097. Structure EpitaxialplanartypePNPsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor Features 1)LargeIC. ICMax.=500mA 2)LowVCE(sat).Idealforlow-voltageoperation. 3)Complementsthe2SC2411K/2SC1741S/2SC4097. Structure EpitaxialplanartypePNPsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor Features 1)LargeIC. ICMax.=500mA 2)LowVCE(sat).Idealforlow-voltageoperation. 3)Complementsthe2SC2411K/2SC1741S/2SC4097. Structure EpitaxialplanartypePNPsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor Features 1)LargeIC. ICMax.=500mA 2)LowVCE(sat).Idealforlow-voltageoperation. 3)Complementsthe2SC2411K/2SC1741S/2SC4097. Structure EpitaxialplanartypePNPsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerPNPTransistor VOLTAGE32VoltsCURRENT0.5Ampere FEATURE *Surfacemountpackage.(SOT-23) *LowsaturationvoltageV CE(sat)=-0.4V(max.)(IC=-100mA) *Lowcob.Cob=7.0pF(Typ.) *PC=200mW(mountedonceramicsubstrate). *Highsaturationcurrentcapability. CONSTRUCTION *PNPSiliconTransistor *Epi | CHENMKOCHENMKO CHENMKO | |||
MediumPowerTransistor Features 1)LargeIC. ICMax.=500mA 2)LowVCE(sat).Idealforlow-voltageoperation. 3)Complementsthe2SC2411K/2SC1741S/2SC4097. Structure EpitaxialplanartypePNPsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor Features 1)LargeIC. ICMax.=500mA 2)LowVCE(sat).Idealforlow-voltageoperation. 3)Complementsthe2SC2411K/2SC1741S/2SC4097. Structure EpitaxialplanartypePNPsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor Features 1)LargeIC. ICMax.=500mA 2)LowVCE(sat).Idealforlow-voltageoperation. 3)Complementsthe2SC2411K/2SC1741S/2SC4097. Structure EpitaxialplanartypePNPsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor Features 1)LargeIC. ICMax.=500mA 2)LowVCE(sat).Idealforlow-voltageoperation. 3)Complementsthe2SC2411K/2SC1741S/2SC4097. Structure EpitaxialplanartypePNPsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNPSiliconEpitaxialTransistors Features ·LargeIC.ICMax.=-0.5A ·LowVCE(sat).Idealforlow-voltageoperation. ·EpoxymeetsUL94V-0flammabilityrating ·MoisureSensitivityLevel1 ·LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ·· | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPSiliconEpitaxialTransistors Features ·LargeIC.ICMax.=-0.5A ·LowVCE(sat).Idealforlow-voltageoperation. ·EpoxymeetsUL94V-0flammabilityrating ·MoisureSensitivityLevel1 ·LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ·· | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPSiliconEpitaxialTransistors Features ·LargeIC.ICMax.=-0.5A ·LowVCE(sat).Idealforlow-voltageoperation. ·EpoxymeetsUL94V-0flammabilityrating ·MoisureSensitivityLevel1 ·LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ·· | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPTransistors 文件:1.24931 Mbytes Page:2 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.30905 Mbytes Page:2 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.24931 Mbytes Page:2 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.30905 Mbytes Page:2 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.24931 Mbytes Page:2 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.30905 Mbytes Page:2 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SiliconEpitaxialPlanarTransistor 文件:204.87 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
PNPSiliconGeneralPurposeTransistor 文件:700.51 Kbytes Page:2 Pages | SECOS SeCoS Halbleitertechnologie GmbH | |||
SiliconEpitaxialPlanarTransistor 文件:209.75 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
PNPTransistors 文件:1.24931 Mbytes Page:2 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SiliconEpitaxialPlanarTransistor 文件:167.49 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
PNPTransistors 文件:1.30905 Mbytes Page:2 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
MediumPowerTransistor 文件:168.21 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNPSilicon 文件:1.55313 Mbytes Page:5 Pages | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
MediumPowerTransistor(-32V,-500mA) 文件:1.52343 Mbytes Page:8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor 文件:168.21 Kbytes Page:3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor(-32V,-500mA) 文件:1.52343 Mbytes Page:8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor(-32V,-500mA) 文件:1.52343 Mbytes Page:8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor 文件:916.56 Kbytes Page:4 Pages | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | |||
MediumPowerTransistor 文件:916.56 Kbytes Page:4 Pages | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | |||
MediumPowerTransistor 文件:916.56 Kbytes Page:4 Pages | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 32V 0.5A SMT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 32V 0.5A SMT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor 文件:335.59 Kbytes Page:4 Pages | WILLASWILLAS electronics corp 威倫威倫电子股份有限公司 | |||
PNPSiliconEpitaxialTransistors 文件:325.22 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPSiliconEpitaxialTransistors 文件:325.22 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPSiliconEpitaxialTransistors 文件:325.22 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPSiliconEpitaxialTransistors 文件:325.22 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 |
2SA1036产品属性
- 类型
描述
- 型号
2SA1036
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY ROHM TRANSISTOR SC-59 -40V -.5A .2W ECB SURFACE MT
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ROHM |
2016+ |
SOT23 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ROHM |
2020+ |
SOT-23 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ROHM/罗姆 |
22+ |
SOT-23 |
100000 |
代理渠道/只做原装/可含税 |
|||
ROHM/罗姆 |
23+ |
SOT-23 |
54258 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ROHM |
23+ |
SOT23 |
20000 |
原厂原装正品现货 |
|||
ROHM/罗姆 |
1948+ |
SMT3 |
18562 |
只做原装正品现货!或订货假一赔十! |
|||
ROHM/罗姆 |
22+ |
SOT-23 |
12680 |
||||
ROHM(罗姆) |
23+ |
SOT346 |
6000 |
||||
ROHM |
21+ |
N/A |
15000 |
深圳通 |
|||
ROHM |
17+ |
SOT-346 |
1450 |
只做原装正品 |
2SA1036规格书下载地址
2SA1036参数引脚图相关
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- 3g汽车
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- 2sc4226
- 2SA1067
- 2SA1065
- 2SA1064
- 2SA1063
- 2SA1062
- 2SA1061
- 2SA1060
- 2SA1052
- 2SA1051A
- 2SA1051
- 2SA1050A
- 2SA1050
- 2SA105
- 2SA1049
- 2SA1048
- 2SA1047
- 2SA1046
- 2SA1045
- 2SA1044
- 2SA1043
- 2SA1042
- 2SA1041
- 2SA1040
- 2SA104
- 2SA1039
- 2SA1038
- 2SA1037(A,K,KLN)
- 2SA1037
- 2SA1036(K)
- 2SA1035
- 2SA1034
- 2SA1033
- 2SA1032
- 2SA1031
- 2SA1030
- 2SA103
- 2SA1029
- 2SA1028
- 2SA1027
- 2SA1026
- 2SA1025
- 2SA1024
- 2SA1023
- 2SA1022
- 2SA1021
- 2SA1020
- 2SA102
- 2SA1019
- 2SA1018
- 2SA1017
- 2SA1016
- 2SA1015
- 2SA1013
- 2SA1012
- 2SA1011
2SA1036数据表相关新闻
2SA1037AKT146Q
2SA1037AKT146Q
2023-5-262SA1012G-TO252R-R-TG_UTC代理商
2SA1012G-TO252R-R-TG_UTC代理商
2023-2-212SA1015G-TO92K-BL-TG_UTC代理商
2SA1015G-TO92K-BL-TG_UTC代理商
2023-2-162SA1015-Y-AP(原厂授权中国分销商)
主要参数: 分立半导体产品 电流-集电极(Ic)(最大值):150mA 电压-集射极击穿(最大值):50V 电流(最大值):100nA(ICBO) DC电流增益(hFE)(最小值):120 功率-最大值:400MW 频率-跃迁:80MHz 工作温度:-55°C~125°C 安装类型:通孔 封装:TO-226-3,TO-92-3
2020-3-62SA1036KT146R三极管进口原装现货
2SA1036KT146R三极管进口原装现货 启动用表面安装型三极管
2019-8-152SA1036KT146R一级代理进口原装现货尽在-宇集芯电子
2SA1036KT146R 2SA1036KT146R
2019-5-9
DdatasheetPDF页码索引
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