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位置：首页 > IC中文资料第454页 > 2N7002T

2N7002T价格

参考价格：￥0.3957

型号：2N7002T 品牌：Fairchild 备注：这里有2N7002T多少钱，2024年最近7天走势，今日出价，今日竞价，2N7002T批发/采购报价，2N7002T行情走势销售排行榜，2N7002T报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N7002T

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PD:0.15W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
2N7002T

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N7002T

SmallSignalMOSFET

FEATURES ●HighdensitycelldesignforlowRDS(ON). ●Voltagecontrolledsmallsignalswitch. ●Ruggedandreliable. ●Highsaturationcurrentcapability.

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2N7002T

N-ChannelENHANCEMENTMODEPOWERMOSFET

FEATURES: *FastSwitchingSpeed *LowOn-Resistance *LowVoltageDriver APPLICATIONS: *Drivers:Relays,Solenoids,Lamps,Hammers,Displays,Memories *BatteryOperatedSystems *PowerSupplyConverterCircuits *Load/PowerSwitchingCellPhones,Pagers

WEITRONWEITRON

威堂電子科技

WEITRON
2N7002T

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheonstateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagement applications. •DC-DCConverters •Powermanagementfunctions •Battery

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002T

300mAmps,60VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC2N7002Thasbeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7002T

N-ChannelPlastic-EncapsulateTransistor

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •LowON-ResistanceandlowInputCapacitance •LowGateThresholdVoltage •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •AvailableinLead

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2N7002T

SmallSignalMOSFETTransistor

FEATURES ●Lowon-resistance. ●Lowgatethresholdvoltge. ●Lowinputcapacitance. ●Fastswitchingspeed. ●Lowinput/outputleakage. APPLICATIONS ●N-channelenhancementmodeeffecttransistor. ●Switchingapplication.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
2N7002T

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes3and4)

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002T

MOSFET(N-Channel)

MOSFET(N-Channel) FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2N7002T

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=115mA ●RDS(ON)

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2N7002T

SOT-523Plastic-EncapsulateMOSFET

N-ChannelMOSFET Features ●HighdensitycelldesignforLowRDS(on) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected Applications ●DC/DCConverter ●LoadSwitchforPortableDevices ●BatterySwitch

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI
2N7002T

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=115mA ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2N7002T

SOT-523Plastic-EncapsulateMOSFETS

MOSFET(N-Channel) FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG Halogenfreeproductforpackingcodesuffi

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

WILLAS
2N7002T

MOSFET(N-Channel)

FEATURES Powerdissipation PD:0.15W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2N7002T

N-ChannelPlastic-EncapsulateMOSFETS

FEATURES ●HighDensityCellDesignforLowRDS(ON) ●VoltageControlledSmallSignalSwitch ●RuggedandReliable ●HighSaturationCurrentCapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

SECELECTRONICS

SEC Electronics Inc.

SECELECTRONICS
2N7002T

SOT-523Plastic-EncapsulateMOSFETS

MOSFET(N-Channel) FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

TGS

Tiger Electronic Co.,Ltd

TGS
2N7002T

Voltagecontrolledsmallsignalswitch

Features ■HighdensitycelldesignforlowRDS(ON) ■Voltagecontrolledsmallsignalswitch ■Ruggedandreliable ■Highsaturationcurrentcapability Applications ■LoadSwitchforPortableDevices ■DC/DCConverter

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
2N7002T

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
2N7002T

SOT-523Plastic-EncapsulateMOSFETS

FEATURE oHighdensitycelldesignforlowRpson) eoltagecontrolledsmallsignalswitch eRuggedandreliable eHighsaturationcurrentcapability APPLICATION ®LoadSwitchforPortableDevices eDC/DCConverter

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2N7002T

300mA,60VN-CHANNELPOWERMOSFET

文件：162.91 Kbytes Page：3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7002T

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：447.74 Kbytes Page：4 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002T

N-ChannelEnhancementMOSFET

文件：337.37 Kbytes Page：3 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2N7002

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description •N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitching. •Ruggeda

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
2N7002

N-ChannelEnhancement-ModeVerticalDMOSFETs

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

SUTEX

Supertex, Inc

SUTEX
2N7002

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

FEATURES *60VoltVCEO

Zetex

Zetex Semiconductors

Zetex
2N7002

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技

Vishay
2N7002

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N7002T_09

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes3and4)

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002T-7-F

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes3and4)

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002TB

60VN-CHANNELENHANCEMENTMODEMOSFET

FEATURES •RDS(ON),VGS@10V,IDS@500mA=5Ω •RDS(ON),VGS@4.5V,IDS@50mA=7.5Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Relays,Displays,Lamps,Solenoids,Memories,

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
2N7002T-C

N-ChannelPlastic-EncapsulateMOSFETS

FEATURES ●HighDensityCellDesignforLowRDS(ON) ●VoltageControlledSmallSignalSwitch ●RuggedandReliable ●HighSaturationCurrentCapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

SECELECTRONICS

SEC Electronics Inc.

SECELECTRONICS
2N7002TE

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=0.29A ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2N7002TG-AN3-R

300mAmps,60VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC2N7002Thasbeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7002TL-AN3-R

300mAmps,60VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC2N7002Thasbeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7002TPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT0.250Ampere FEATURE *Smallsurfacemountingtype.(SC-75/SOT-416) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION

CHENMKOCHENMKO

CHENMKO

CHENMKO
2N7002TQ

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002TQissuitablefo

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002TQ-13-F

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002TQissuitablefo

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002TQ-7-F

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002TQissuitablefo

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002T.

N-Channel60V(D-S)MOSFET

文件：1.83389 Mbytes Page：8 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
2N7002T_1

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：447.74 Kbytes Page：4 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002T_10

N-ChannelEnhancementMOSFET

文件：337.37 Kbytes Page：3 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2N7002T_11

0.115A,60V,RDS(ON)7.2廓N-ChannelEnhancementMOSFET

文件：288.82 Kbytes Page：3 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2N7002T_12

300mA,60VN-CHANNELPOWERMOSFET

文件：162.91 Kbytes Page：3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7002T_13

N-ChannelPlastic-EncapsulateTransistor

文件：299.37 Kbytes Page：4 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2N7002T_15

N-CHANNELENHANCEMENTMODEMOSFET

文件：288.82 Kbytes Page：3 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2N7002T_15

N-CHANNELENHANCEMENTMODEMOSFET

文件：112.82 Kbytes Page：5 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002T_15

N-CHANNELMOSFETFORHIGHSPEEDSWITCHING

文件：178.85 Kbytes Page：3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7002T-13-F

N-CHANNELENHANCEMENTMODEMOSFET

文件：112.82 Kbytes Page：5 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002T-13-F

N-CHANNELENHANCEMENTMODEMOSFET

文件：288.82 Kbytes Page：3 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2N7002T-13-G

包装：卷带（TR） 描述：MOSFET N-CH 60V SOT523 分立半导体产品 晶体管 - FET，MOSFET - 单个

PAMDiodes Incorporated

龙鼎威

PAM
2N7002T-7

N-CHANNELENHANCEMENTMODEMOSFET

文件：112.82 Kbytes Page：5 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002T-7-F

N-CHANNELENHANCEMENTMODEMOSFET

文件：288.82 Kbytes Page：3 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2N7002T-7-F

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：447.74 Kbytes Page：4 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002T-7-F

N-CHANNELENHANCEMENTMODEMOSFET

文件：112.82 Kbytes Page：5 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002T-7-G

包装：卷带（TR） 描述：MOSFET N-CH 60V SOT523 分立半导体产品 晶体管 - FET，MOSFET - 单个

PAMDiodes Incorporated

龙鼎威

PAM
2N7002TG-AN3-R

300mA,60VN-CHANNELPOWERMOSFET

文件：162.91 Kbytes Page：3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7002TG-AN3-R

N-CHANNELMOSFETFORHIGHSPEEDSWITCHING

文件：178.85 Kbytes Page：3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7002TL-AN3-R

300mA,60VN-CHANNELPOWERMOSFET

文件：162.91 Kbytes Page：3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7002TQ-13-F

N-CHANNELENHANCEMENTMODEMOSFET

文件：288.82 Kbytes Page：3 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

2N7002T产品属性

  • 类型

    描述

  • 型号

    2N7002T

  • 功能描述

    MOSFET N-Chan Enhancement Mode Field Effect

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

2N7002T供应商更多...

更新时间：2024-5-9 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市凌旭科技有限公司
2N7002TA
ZETEX
2016+
SOT23
9775
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市环球伟业电子有限公司
2N7002TA
21+
SOT23
300000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市纳立科技有限公司
2N7002T
三年内
1983
纳立只做原装正品13590203865
询价
深圳市科芯源微电子有限公司
2N7002TB_R1_0001
PANJIT/强茂
23+
SOT-523
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市科恒伟业电子有限公司
2N7002T-7-F
DIODES/美台
22+
SOT-523
9850
只做原装正品假一赔十!正规渠道订货!
询价
深圳市航宇科工半导体有限公司
2N7002TA
ZETEX
22+
SOT-23
600000
航宇科工半导体-央企优秀战略合作伙伴!
询价
深圳市博浩通科技有限公司
2N7002T
PH
23+
SOT23
21000
全新原装
询价
深圳市粤骏腾电子科技有限公司
2N7002T
NXP/恩智浦
23+
SMD
1760
全新原装数量均有多电话咨询
询价
深圳市跃创芯科技有限公司
2N7002T
CJ/长电
21+
SOT-523
60000
绝对原装正品现货,假一罚十
询价
深圳市明嘉莱科技有限公司
2N7002T-7-F
DIODES/美台
23+
SOT-523
918000
明嘉莱只做原装正品现货
询价

2N7002T芯片相关品牌

  • ADVANTECH
  • AXIOMTEK
  • bookham
  • ITT
  • LEIDITECH
  • Maxim
  • NELLSEMI
  • PYRAMID
  • SOCAY
  • TEMEX
  • TURCK
  • ZETTLER

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