2N64晶体管资料

  • 2N64别名:2N64三极管、2N64晶体管、2N64晶体三极管

  • 2N64生产厂家:CSR_美国电子晶体管公司

  • 2N64制作材料:Ge-PNP

  • 2N64性质:低频或音频放大 (LF)

  • 2N64封装形式:直插封装

  • 2N64极限工作电压:25V

  • 2N64最大电流允许值:0.02A

  • 2N64最大工作频率:<1MHZ或未知

  • 2N64引脚数:3

  • 2N64最大耗散功率:0.1W

  • 2N64放大倍数

  • 2N64图片代号:D-161

  • 2N64vtest:25

  • 2N64htest:999900

  • 2N64atest:.02

  • 2N64wtest:.1

  • 2N64代换 2N64用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,3AX51C,

2N64价格

参考价格:¥0.0000

型号:2N64 品牌:Semiconductors 备注:这里有2N64多少钱,2024年最近7天走势,今日出价,今日竞价,2N64批发/采购报价,2N64行情走势销售排行榜,2N64报价。
型号 功能描述 生产厂家&企业 LOGO 操作

SiliconControlledRectifiersReverseBlockingThyristors

SCRs16AMPERESRMS50thru800VOLTS Designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •GlassPassivatedJunctionswithCenter

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconControlledRectifiersReverseBlockingThyristors

SCRs16AMPERESRMS50thru800VOLTS Designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •GlassPassivatedJunctionswithCenter

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconControlledRectifiersReverseBlockingThyristors

SCRs16AMPERESRMS50thru800VOLTS Designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •GlassPassivatedJunctionswithCenter

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SCRs16AMPERESRMS50thru800VOLTS

SCRs16AMPERESRMS50thru800VOLTS Designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •GlassPassivatedJunctionswithCenter

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconControlledRectifiersReverseBlockingThyristors

SCRs16AMPERESRMS50thru800VOLTS Designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •GlassPassivatedJunctionswithCenter

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconControlledRectifiersReverseBlockingThyristors

SCRs16AMPERESRMS50thru800VOLTS Designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •GlassPassivatedJunctionswithCenter

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconControlledRectifiers

SCRs16AMPERESRMS50thru800VOLTS Designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •GlassPassivatedJunctionswithCenter

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconControlledRectifiersReverseBlockingThyristors

SCRs16AMPERESRMS50thru800VOLTS Designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf−wavesilicongate−controlled,solid−statedevicesareneeded. Features •GlassPassivatedJunctionswithCenter

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

COMPLEMENTARYMEDIUM-POWERHIGHVOLTAGEPOWERTRANSISTORS

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

POWERTRANSISTORS(35W)

MOSPEC

MOSPEC

MOSPEC

SPRINGFIELD,NEWJERSEY07081

SiliconNPN,PNPPowerTransostors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PowerTransistors

PowerTransistorsTO-66Case

CentralCentral Semiconductor Corp

美国中央半导体

Central

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-66package •Continuouscollectorcurrent-IC=-1A •Powerdissipation-PD=35W@TC=25℃ •Complementtotype2N3583 APPLICATIONS •Highspeedswitchingandlinearamplifier •High-voltageoperationalamplifiers •Switchingregulators,converters •Deflectionstagesand

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-66package •Continuouscollectorcurrent-IC=-1A •Powerdissipation-PD=35W@TC=25℃ •Complementtotype2N3583 APPLICATIONS •Highspeedswitchingandlinearamplifier •High-voltageoperationalamplifiers •Switchingregulators,converters •Deflectionstagesand

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

iscSiliconPNPPowerTransistor

DESCRIPTION •ContunuousCollectorCurrent-IC=-1A •PowerDissipation-PC=35W@TC=25℃ •Collector-EmitterSaturationVoltage-:VCE(sat)=-5.0V(Max)@IC=-1A APPLICATIONS •Designedforhigh-speedswitchingandlinearamplifierapplicationforhigh-voltageoperationalamplifiers,switchi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SIPNPPOWERBJT

SiliconNPN,PNPPowerTransostors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SPRINGFIELD,NEWJERSEY07081

SiliconNPN,PNPPowerTransostors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

POWERTRANSISTORS(35W)

MOSPEC

MOSPEC

MOSPEC

COMPLEMENTARYMEDIUM-POWERHIGHVOLTAGEPOWERTRANSISTORS

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

PowerTransistors

PowerTransistorsTO-66Case

CentralCentral Semiconductor Corp

美国中央半导体

Central

COMPLEMENTARYMEDIUM-POWERHIGHVOLTAGEPOWERTRANSISTORS

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

POWERTRANSISTORS(35W)

MOSPEC

MOSPEC

MOSPEC

PowerTransistors

PowerTransistorsTO-66Case

CentralCentral Semiconductor Corp

美国中央半导体

Central

SPRINGFIELD,NEWJERSEY07081

SiliconNPN,PNPPowerTransostors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

POWERTRANSISTORS(35W)

MOSPEC

MOSPEC

MOSPEC

COMPLEMENTARYMEDIUM-POWERHIGHVOLTAGEPOWERTRANSISTORS

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

PowerTransistors

PowerTransistorsTO-66Case

CentralCentral Semiconductor Corp

美国中央半导体

Central

PowerTransistors

PowerTransistorsTO-66Case

CentralCentral Semiconductor Corp

美国中央半导体

Central

SPRINGFIELD,NEWJERSEY07081

SILICONNPN/PNPPOWERTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SPRINGFIELD,NEWJERSEY07081

SILICONNPN/PNPPOWERTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PowerTransistors

PowerTransistorsTO-66Case

CentralCentral Semiconductor Corp

美国中央半导体

Central

DarlingtonTransistors(NPNSilicon)

DarlingtonTransistors NPNSilicon Features •Pb−FreePackagesareAvailable** •DeviceMarking:DeviceType,e.g.,2N6426,DateCode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNDarlingtonTransistor

Thisdeviceisdesignedforapplicationsrequiringextremelyhighcurrentgainatcurrentsto1.0A.Sourcedfrom Process05.SeeMPSA14forcharacteristics.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

NPNEPITAXIALSILICONDARLINGTONTRANSISTOR

DARLINGTONTRANSISTOR •Collector-EmitterVoltage:VCEO=40V •CollectorDissipation:PC(max)=625mW

SamsungSamsung Group

三星三星半导体

Samsung

NPNDarlingtonTransistor

NPNDarlingtonTransistor Thisdeviceisdesignedforapplicationsrequiringextremely highcurrentgainatcollectorcurrentsto1.0A.Sourcedfrom Process05.SeeMPSA14forcharacteristics.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

NPNDarlingtontransistor

DESCRIPTION NPNDarlingtontransistorinaTO-92;SOT54plasticpackage. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.30V) •HighDCcurrentgain(min.10000). APPLICATIONS •Generalpurpose •Highgainamplification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

DarlingtonTransistors(NPNSilicon)

DarlingtonTransistors NPNSilicon Features •Pb−FreePackagesareAvailable** •DeviceMarking:DeviceType,e.g.,2N6426,DateCode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNEPITAXIALSILICONTRANSISTOR

SamsungSamsung Group

三星三星半导体

Samsung

NPNEPITAXIALSILICONTRANSISTOR

SamsungSamsung Group

三星三星半导体

Samsung

NPNEpitaxialSiliconTransistor

AmplifierTransistor •Collector-EmitterVoltage:VCEO=50V •CollectorDissipation:PC(max)=625mW

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

COMPLEMENTARTSILICONTRANSISTOR

DESCRIPTION TheCENTRALSEMICONDUCTOR2N6430seriestypesarehermeticallysealdcomplementarysmallsignaltransistorsmanufacturedbytheepitaxialplanarprocessdesignedforhighvoltageamplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central

NPNSILICONTRANSISTORS

GeneralPurposeTransistors.

CDIL

CDIL

CDIL

COMPLEMENTARYSILICONTRANSISTOR

COMPLEMENTARYSILICONTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

COMPLEMENTARYSILICONTRANSISTOR

COMPLEMENTARYSILICONTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NPNSILICONTRANSISTORS

GeneralPurposeTransistors.

CDIL

CDIL

CDIL

SMALLSIGNALTRANSISTORS

COMPLEMENTARYSILICONTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

COMPLEMENTARYSILICONTRANSISTOR

COMPLEMENTARYSILICONTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

COMPLEMENTARYSILICONTRANSISTOR

COMPLEMENTARYSILICONTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

HIGH-POWERPNPSILICONTRANSISTORS

HIGH-POWERPNPSILICONTRANSISTORS ...designedforuseinindustrialpoweramplifiersandswitchingcircuitapplications. FEATURES: *HighDCCurrentGainhFE=20-80©lc=10A=12(Min)®lc=25A *LowCollector-EmitterSaturationVoltageVCB(sat)=1.0V(Max.)@lc=10A,IB=1.0A *Complementto2N

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

HIGH-POWERPNPSILICONTRANSISTORS

HIGH-POWERPNPSILICONTRANSISTORS ...designedforuseinindustrialpoweramplifiersandswitchingcircuitapplications. FEATURES: *HighDCCurrentGainhFE=20-80©lc=10A=12(Min)®lc=25A *LowCollector-EmitterSaturationVoltageVCB(sat)=1.0V(Max.)@lc=10A,IB=1.0A *Complementto

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

HIGHPOWERPNPSILICONTRANSISTORS

DESCRIPTION DesignedforuseinIndustrial-MilitaryPowerAmplifierandSwitchingCircuitApplications

SEME-LAB

Seme LAB

SEME-LAB

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •HighDCcurrentgain •Fastswitchingtimes •Lowcollectorsaturationvoltage •Complementtotype2N6338~2N6341 APPLICATIONS •Foruseinindustrial-militarypoweramplifierandswitchingcircuitapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •HighDCcurrentgain •Fastswitchingtimes •Lowcollectorsaturationvoltage •Complementtotype2N6338~2N6341 APPLICATIONS •Foruseinindustrial-militarypoweramplifierandswitchingcircuitapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

POWERTRANSISTORS(25A,200W)

HIGH-POWERPNPSILICONTRANSISTORS ...designedforuseinindustrialpoweramplifiersandswitchingcircuitapplications. FEATURES: *HighDCCurrentGain hFE=20-80©lc=10A =12(Min)®lc=25A *LowCollector-EmitterSaturationVoltage VCB(sat)=1.0V(Max.)@lc=10A,IB

MOSPEC

MOSPEC

MOSPEC

POWERTRANSISTORS(25A,200W)

HIGH-POWERPNPSILICONTRANSISTORS ...designedforuseinindustrialpoweramplifiersandswitchingcircuitapplications. FEATURES: *HighDCCurrentGain hFE=20-80©lc=10A =12(Min)®lc=25A *LowCollector-EmitterSaturationVoltage VCB(sat)=1.0V(Max.)@lc=10A,IB

MOSPEC

MOSPEC

MOSPEC

POWERTRANSISTORSPNPSILICON

High-PowerPNPSiliconTransistors ...designedforuseinindustrial–militarypoweramplifierandswitchingcircuitapplications. •HighCollector–EmitterSustainingVoltage—VCEO(sus)=100Vdc(Min)—2N6437=120Vdc(Min)—2N6438 •HighDCCurrentGain—hFE=20–80@IC=10Adc=12(

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

HIGH-POWERPNPSILICONTRANSISTORS

HIGH-POWERPNPSILICONTRANSISTORS ...designedforuseinindustrialpoweramplifiersandswitchingcircuitapplications. FEATURES: *HighDCCurrentGainhFE=20-80©lc=10A=12(Min)®lc=25A *LowCollector-EmitterSaturationVoltageVCB(sat)=1.0V(Max.)@lc=10A,IB=1.0A *Complementto

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

HIGHPOWERPNPSILICONTRANSISTORS

DESCRIPTION DesignedforuseinIndustrial-MilitaryPowerAmplifierandSwitchingCircuitApplications

SEME-LAB

Seme LAB

SEME-LAB

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •HighDCcurrentgain •Fastswitchingtimes •Lowcollectorsaturationvoltage •Complementtotype2N6338~2N6341 APPLICATIONS •Foruseinindustrial-militarypoweramplifierandswitchingcircuitapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •HighDCcurrentgain •Fastswitchingtimes •Lowcollectorsaturationvoltage •Complementtotype2N6338~2N6341 APPLICATIONS •Foruseinindustrial-militarypoweramplifierandswitchingcircuitapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2N64产品属性

  • 类型

    描述

  • 型号

    2N64

  • 功能描述

    SCR 50V 16A

  • RoHS

  • 制造商

    STMicroelectronics 最大转折电流

  • IBO

    480 A 额定重复关闭状态电压

  • VDRM

    600 V

  • 关闭状态漏泄电流(在VDRM_IDRM下)

    5 uA

  • 开启状态

    RMS

  • 正向电压下降

    1.6 V

  • 栅触发电压(Vgt)

    1.3 V

  • 最大栅极峰值反向电压

    5 V

  • 栅触发电流(Igt)

    35 mA 保持电流(Ih

  • 最大值)

    75 mA

  • 安装风格

    Through Hole

  • 封装/箱体

    TO-220

  • 封装

    Tube

更新时间:2024-5-17 19:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA/摩托罗拉
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
ON
1738+
TO-3
8529
科恒伟业!只做原装正品,假一赔十!
MICROSEMI
22+
SMD
518000
明嘉莱只做原装正品现货
ON/安森美
23+
NA/
3261
原装现货,当天可交货,原型号开票
CHINA
22+
TO-39
640
航宇科工半导体-央企合格优秀供方!
MOTOROLA/摩托罗拉
2021+
TO-3
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
MICROSEMI
9952
20
公司优势库存 热卖中!
ON/安森美
23+
TO-3
50000
全新原装正品现货,支持订货
TO-3
10000
全新
Microchip Technology
24+
TO-204AA,TO-3
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证

2N64芯片相关品牌

  • ALLIED
  • DIODES
  • EATON
  • etc2
  • HARTING
  • Littelfuse
  • MERITEK
  • MOLEX1
  • NSC
  • RALTRON
  • SUMIDA
  • TEC

2N64数据表相关新闻