2N57晶体管资料

  • 2N57别名:2N57三极管、2N57晶体管、2N57晶体三极管

  • 2N57生产厂家:美国固体电子公司

  • 2N57制作材料:Ge-PNP

  • 2N57性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N57封装形式

  • 2N57极限工作电压:60V

  • 2N57最大电流允许值:0.8A

  • 2N57最大工作频率:<1MHZ或未知

  • 2N57引脚数

  • 2N57最大耗散功率:20W

  • 2N57放大倍数

  • 2N57图片代号:NO

  • 2N57vtest:60

  • 2N57htest:999900

  • 2N57atest:.8

  • 2N57wtest:20

  • 2N57代换 2N57用什么型号代替:3AK34,

2N57价格

参考价格:¥4.6981

型号:2N5769 品牌:Semiconductors 备注:这里有2N57多少钱,2024年最近7天走势,今日出价,今日竞价,2N57批发/采购报价,2N57行情走势销售排行榜,2N57报价。
型号 功能描述 生产厂家&企业 LOGO 操作

SCRS5AMP,PLANAR

SCRs.5Amp,Planar

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SCRS5AMP,PLANAR

SCRs.5Amp,Planar

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SCRS5AMP,PLANAR

SCRs.5Amp,Planar

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SCRS5AMP,PLANAR

SCRs.5Amp,Planar

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SCRS5AMP,PLANAR

SCRs.5Amp,Planar

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NPNTO-39/TO-5

NPNTO-39/TO-5 Case801 I(MAX)=0.05to10A VCEO(sus)=40•800V fT=1to50MHz

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

COLLECTORCURRENT=10AMPSNPNTYPES

[APIELECTRONICS,INC.] COLLECTORCURRENT=10AMPSNPNTYPES

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highcurrentcapability APPLICATIONS •Forlinearamplifierandinductiveswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highcurrentcapability APPLICATIONS •Forlinearamplifierandinductiveswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistor

DESCRIPTION •ExcellentSafeOperatingArea •HighDCCurrentGain-hFE=30-300(Min)@lc=5A •LowSaturationVoltage-:VCE(sat)=1.2V(Max)@|c=10A APPLICATIONS •Designedforlinearamplifiers,seriespassregulators,andinductiveswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistor

DESCRIPTION •ExcellentSafeOperatingArea •HighDCCurrentGain-hFE=30-300(Min)@IC=10A •LowSaturationVoltage-:VCE(sat)=1.2V(Max)@IC=20A APPLICATIONS •Designedforlinearamplifiers,seriespassregulators,andinductiveswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highcurrentcapability APPLICATIONS •Forlinearamplifierandinductiveswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highcurrentcapability APPLICATIONS •Forlinearamplifierandinductiveswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC

iscSiliconPNPPowerTransistors

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-60V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max.)@IC=-5A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-60V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max.)@IC=-5A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPPowerTransistors

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-100V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max.)@IC=-5A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

iscSiliconPNPPowerTransistors

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-100V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max.)@IC=-5A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-66package •Lowcollectorsaturationvoltage APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC

iscSiliconPNPPowerTransistors

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-60V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max.)@IC=-5A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-60V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max.)@IC=-5A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPPowerTransistors

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-100V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max.)@IC=-5A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-66package •Lowcollectorsaturationvoltage APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC

iscSiliconPNPPowerTransistors

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-100V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max.)@IC=-5A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollector-emittersaturationvoltage •Fastswitchingspeed APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications.

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Fastswitchingspeed APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Fastswitchingspeed APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-60V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-1.5V(Max.)@IC=-10A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Fastswitchingspeed APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollector-emittersaturationvoltage •Fastswitchingspeed APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications.

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Fastswitchingspeed APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-66package ·Lowcollectorsaturationvoltage ·Fastswitchingspeed APPLICATIONS ·Forgeneral–purposeswitchingandpoweramplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-66package ·Lowcollector-emittersaturationvoltage ·Fastswitchingspeed APPLICATIONS ·Forgeneral–purposeswitchingandpoweramplifierapplications.

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-66package ·Lowcollectorsaturationvoltage ·Fastswitchingspeed APPLICATIONS ·Forgeneral–purposeswitchingandpoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-66package ·Lowcollectorsaturationvoltage ·Fastswitchingspeed APPLICATIONS ·Forgeneral–purposeswitchingandpoweramplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-66package ·Lowcollectorsaturationvoltage ·Fastswitchingspeed APPLICATIONS ·Forgeneral–purposeswitchingandpoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-66package ·Lowcollector-emittersaturationvoltage ·Fastswitchingspeed APPLICATIONS ·Forgeneral–purposeswitchingandpoweramplifierapplications.

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

SiliconPNPPowerTransistors DESCRIPTION ·WithTO-3package ·Complementtotype2N5301/5302/5303 ·Lowcollectorsaturationvoltage ·Excellentsafeoperatingarea APPLICATIONS ·Foruseinpoweramplifierandswitchingcircuitsapplications.

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Complementtotype2N5301/5302/5303 •Lowcollectorsaturationvoltage •Excellentsafeoperatingarea APPLICATIONS •Foruseinpoweramplifierandswitchingcircuitsapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC

POWERTRANSISTORS(200W)

MOSPEC

MOSPEC

MOSPEC

PNPSILICONHIGH-POWERTRANSISTORS

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Complementtotype2N5301/5302/5303 •Lowcollectorsaturationvoltage •Excellentsafeoperatingarea APPLICATIONS •Foruseinpoweramplifierandswitchingcircuitsapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PNPSILICONPOWERTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N4398seriestypesarePNPsiliconpowertransistorsdesignedforpoweramplifierandswitchingapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

SiliconPNPPowerTransistors

SiliconPNPPowerTransistors DESCRIPTION ·WithTO-3package ·Complementtotype2N5301/5302/5303 ·Lowcollectorsaturationvoltage ·Excellentsafeoperatingarea APPLICATIONS ·Foruseinpoweramplifierandswitchingcircuitsapplications.

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

PNPSILICONHIGH-POWERTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SILICONPOWERTRANSISTORS

SILICONPOWERTRANSISTORS TheyarePNPtransistorsmountedinJedecTO-3package. Theyareintendedforuseinpoweramplifierandswitchingcircuitsapplications. ComplementtoNPN2N5301–2N5302–2N5303. CompliancetoRoHS.

COMSET

Comset Semiconductor

COMSET

SiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=100V(Min.) •DCCurrentGain-hFE=25(Min.)@IC=3A •LowCollector-EmitterSaturationVoltage-:VCE(sat)=1.0V(Max)@IC=3A APPLICATIONS •Designedforuseinhighpoweraudioamplifierapplicationsandhighvoltageswitching

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollector-emittersaturationvoltage APPLICATIONS •Foruseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Excellentsafeoperatingarea APPLICATIONS •Foruseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

COLLECTORCURRENT=10AMPSNPNTYPES

[APIELECTRONICS,INC.] COLLECTORCURRENT=10AMPSNPNTYPES

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Excellentsafeoperatingarea APPLICATIONS •Foruseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollector-emittersaturationvoltage APPLICATIONS •Foruseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

COLLECTORCURRENT=10AMPSNPNTYPES

[APIELECTRONICS,INC.] COLLECTORCURRENT=10AMPSNPNTYPES

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Excellentsafeoperatingarea APPLICATIONS •Foruseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Excellentsafeoperatingarea APPLICATIONS •Foruseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=120V(Min.) •DCCurrentGain-hFE=20(Min.)@IC=3A •LowCollector-EmitterSaturationVoltage-:VCE(sat)=1.0V(Max)@IC=3A APPLICATIONS •Designedforuseinhighpoweraudioamplifierapplicationsandhighvoltageswitching

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Excellentsafeoperatingarea APPLICATIONS •Foruseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

COLLECTORCURRENT=10AMPSNPNTYPES

[APIELECTRONICS,INC.] COLLECTORCURRENT=10AMPSNPNTYPES

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Lowcollector-emittersaturationvoltage APPLICATIONS •Foruseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

2N57产品属性

  • 类型

    描述

  • 型号

    2N57

  • 制造商

    Motorola

  • 功能描述

    2N5719 MOT N3E7D NOTES

更新时间:2024-5-21 16:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA
专业铁帽
CAN3
1500
原装铁帽专营,代理渠道量大可订货
SCA
2
全新原装 货期两周
OPTEK
1846+
SURFACEMOUNT
10000
原装现货!随时可以看货!一片起卖!
HARRIS/哈里斯
20+
CAN
6000
只做原装现货特价出售
N/A
23+
NA
1126
专做原装正品,假一罚百!
CENTRAL-中环
24+25+/26+27+
TO-39-3
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
MOT
2023+
CAN
50000
全新原装现货
OPTEK
2021+
SURFACEMOUNT
10000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
04+
CAN
7000
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票

2N57芯片相关品牌

  • AAC
  • AITSEMI
  • Atmel
  • BITECH
  • DBLECTRO
  • HUAXINAN
  • MOLEX3
  • Nuvoton
  • OSRAM
  • RECOM
  • SIEMENS
  • WILLOW

2N57数据表相关新闻