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2N57晶体管资料
2N57别名:2N57三极管、2N57晶体管、2N57晶体三极管
2N57生产厂家:美国固体电子公司
2N57制作材料:Ge-PNP
2N57性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2N57封装形式:
2N57极限工作电压:60V
2N57最大电流允许值:0.8A
2N57最大工作频率:<1MHZ或未知
2N57引脚数:
2N57最大耗散功率:20W
2N57放大倍数:
2N57图片代号:NO
2N57vtest:60
2N57htest:999900
- 2N57atest:.8
2N57wtest:20
2N57代换 2N57用什么型号代替:3AK34,
2N57价格
参考价格:¥4.6981
型号:2N5769 品牌:Semiconductors 备注:这里有2N57多少钱,2024年最近7天走势,今日出价,今日竞价,2N57批发/采购报价,2N57行情走势销售排行榜,2N57报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SCRS5AMP,PLANAR SCRs.5Amp,Planar | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SCRS5AMP,PLANAR SCRs.5Amp,Planar | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SCRS5AMP,PLANAR SCRs.5Amp,Planar | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SCRS5AMP,PLANAR SCRs.5Amp,Planar | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SCRS5AMP,PLANAR SCRs.5Amp,Planar | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
NPNTO-39/TO-5 NPNTO-39/TO-5 Case801 I(MAX)=0.05to10A VCEO(sus)=40•800V fT=1to50MHz | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
COLLECTORCURRENT=10AMPSNPNTYPES [APIELECTRONICS,INC.] COLLECTORCURRENT=10AMPSNPNTYPES | ETC1List of Unclassifed Manufacturers 未分类制造商 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highcurrentcapability APPLICATIONS •Forlinearamplifierandinductiveswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highcurrentcapability APPLICATIONS •Forlinearamplifierandinductiveswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistor DESCRIPTION •ExcellentSafeOperatingArea •HighDCCurrentGain-hFE=30-300(Min)@lc=5A •LowSaturationVoltage-:VCE(sat)=1.2V(Max)@|c=10A APPLICATIONS •Designedforlinearamplifiers,seriespassregulators,andinductiveswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION •ExcellentSafeOperatingArea •HighDCCurrentGain-hFE=30-300(Min)@IC=10A •LowSaturationVoltage-:VCE(sat)=1.2V(Max)@IC=20A APPLICATIONS •Designedforlinearamplifiers,seriespassregulators,andinductiveswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highcurrentcapability APPLICATIONS •Forlinearamplifierandinductiveswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highcurrentcapability APPLICATIONS •Forlinearamplifierandinductiveswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications. | SAVANTIC Savantic, Inc. | |||
iscSiliconPNPPowerTransistors DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-60V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max.)@IC=-5A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-60V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max.)@IC=-5A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-100V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max.)@IC=-5A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
iscSiliconPNPPowerTransistors DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-100V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max.)@IC=-5A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications. | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-66package •Lowcollectorsaturationvoltage APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications. | SAVANTIC Savantic, Inc. | |||
iscSiliconPNPPowerTransistors DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-60V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max.)@IC=-5A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-60V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max.)@IC=-5A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-100V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max.)@IC=-5A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-66package •Lowcollectorsaturationvoltage APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications. | SAVANTIC Savantic, Inc. | |||
iscSiliconPNPPowerTransistors DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-100V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max.)@IC=-5A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •Lowcollector-emittersaturationvoltage •Fastswitchingspeed APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications. | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Fastswitchingspeed APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications. | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Fastswitchingspeed APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-60V(Min.) •LowCollectorSaturationVoltage-:VCE(sat)=-1.5V(Max.)@IC=-10A •WideAreaofSafeOperation APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Fastswitchingspeed APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •Lowcollector-emittersaturationvoltage •Fastswitchingspeed APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications. | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Fastswitchingspeed APPLICATIONS •Forgeneral–purposeswitchingandpoweramplifierapplications. | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-66package ·Lowcollectorsaturationvoltage ·Fastswitchingspeed APPLICATIONS ·Forgeneral–purposeswitchingandpoweramplifierapplications. | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-66package ·Lowcollector-emittersaturationvoltage ·Fastswitchingspeed APPLICATIONS ·Forgeneral–purposeswitchingandpoweramplifierapplications. | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-66package ·Lowcollectorsaturationvoltage ·Fastswitchingspeed APPLICATIONS ·Forgeneral–purposeswitchingandpoweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-66package ·Lowcollectorsaturationvoltage ·Fastswitchingspeed APPLICATIONS ·Forgeneral–purposeswitchingandpoweramplifierapplications. | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-66package ·Lowcollectorsaturationvoltage ·Fastswitchingspeed APPLICATIONS ·Forgeneral–purposeswitchingandpoweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-66package ·Lowcollector-emittersaturationvoltage ·Fastswitchingspeed APPLICATIONS ·Forgeneral–purposeswitchingandpoweramplifierapplications. | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors SiliconPNPPowerTransistors DESCRIPTION ·WithTO-3package ·Complementtotype2N5301/5302/5303 ·Lowcollectorsaturationvoltage ·Excellentsafeoperatingarea APPLICATIONS ·Foruseinpoweramplifierandswitchingcircuitsapplications. | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •Complementtotype2N5301/5302/5303 •Lowcollectorsaturationvoltage •Excellentsafeoperatingarea APPLICATIONS •Foruseinpoweramplifierandswitchingcircuitsapplications. | SAVANTIC Savantic, Inc. | |||
POWERTRANSISTORS(200W)
| MOSPEC MOSPEC | |||
PNPSILICONHIGH-POWERTRANSISTORS
| bocaBoca semiconductor corporation 博卡博卡半导体公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •Complementtotype2N5301/5302/5303 •Lowcollectorsaturationvoltage •Excellentsafeoperatingarea APPLICATIONS •Foruseinpoweramplifierandswitchingcircuitsapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PNPSILICONPOWERTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTOR2N4398seriestypesarePNPsiliconpowertransistorsdesignedforpoweramplifierandswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SiliconPNPPowerTransistors SiliconPNPPowerTransistors DESCRIPTION ·WithTO-3package ·Complementtotype2N5301/5302/5303 ·Lowcollectorsaturationvoltage ·Excellentsafeoperatingarea APPLICATIONS ·Foruseinpoweramplifierandswitchingcircuitsapplications. | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
PNPSILICONHIGH-POWERTRANSISTORS
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SILICONPOWERTRANSISTORS SILICONPOWERTRANSISTORS TheyarePNPtransistorsmountedinJedecTO-3package. Theyareintendedforuseinpoweramplifierandswitchingcircuitsapplications. ComplementtoNPN2N5301–2N5302–2N5303. CompliancetoRoHS. | COMSET Comset Semiconductor | |||
SiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=100V(Min.) •DCCurrentGain-hFE=25(Min.)@IC=3A •LowCollector-EmitterSaturationVoltage-:VCE(sat)=1.0V(Max)@IC=3A APPLICATIONS •Designedforuseinhighpoweraudioamplifierapplicationsandhighvoltageswitching | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Lowcollector-emittersaturationvoltage APPLICATIONS •Foruseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Excellentsafeoperatingarea APPLICATIONS •Foruseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
COLLECTORCURRENT=10AMPSNPNTYPES [APIELECTRONICS,INC.] COLLECTORCURRENT=10AMPSNPNTYPES | ETC1List of Unclassifed Manufacturers 未分类制造商 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Excellentsafeoperatingarea APPLICATIONS •Foruseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Lowcollector-emittersaturationvoltage APPLICATIONS •Foruseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
COLLECTORCURRENT=10AMPSNPNTYPES [APIELECTRONICS,INC.] COLLECTORCURRENT=10AMPSNPNTYPES | ETC1List of Unclassifed Manufacturers 未分类制造商 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Excellentsafeoperatingarea APPLICATIONS •Foruseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Excellentsafeoperatingarea APPLICATIONS •Foruseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=120V(Min.) •DCCurrentGain-hFE=20(Min.)@IC=3A •LowCollector-EmitterSaturationVoltage-:VCE(sat)=1.0V(Max)@IC=3A APPLICATIONS •Designedforuseinhighpoweraudioamplifierapplicationsandhighvoltageswitching | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Excellentsafeoperatingarea APPLICATIONS •Foruseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
COLLECTORCURRENT=10AMPSNPNTYPES [APIELECTRONICS,INC.] COLLECTORCURRENT=10AMPSNPNTYPES | ETC1List of Unclassifed Manufacturers 未分类制造商 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Lowcollector-emittersaturationvoltage APPLICATIONS •Foruseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 |
2N57产品属性
- 类型
描述
- 型号
2N57
- 制造商
Motorola
- 功能描述
2N5719 MOT N3E7D NOTES
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOTOROLA |
专业铁帽 |
CAN3 |
1500 |
原装铁帽专营,代理渠道量大可订货 |
|||
SCA |
新 |
2 |
全新原装 货期两周 |
||||
OPTEK |
1846+ |
SURFACEMOUNT |
10000 |
原装现货!随时可以看货!一片起卖! |
|||
HARRIS/哈里斯 |
20+ |
CAN |
6000 |
只做原装现货特价出售 |
|||
N/A |
23+ |
NA |
1126 |
专做原装正品,假一罚百! |
|||
CENTRAL-中环 |
24+25+/26+27+ |
TO-39-3 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
MOT |
2023+ |
CAN |
50000 |
全新原装现货 |
|||
OPTEK |
2021+ |
SURFACEMOUNT |
10000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
04+ |
CAN |
7000 |
|||||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
2N57规格书下载地址
2N57参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2N5755
- 2N5754
- 2N5745
- 2N5744
- 2N5743
- 2N5742
- 2N5741
- 2N5740
- 2N5739
- 2N5738
- 2N5737
- 2N5734
- 2N5732
- 2N5730
- 2N5729
- 2N5723
- 2N5722
- 2N5721
- 2N5720
- 2N572
- 2N5719
- 2N5715
- 2N5714
- 2N5713
- 2N5712
- 2N5711
- 2N5710
- 2N571
- 2N5709
- 2N5708
- 2N5707
- 2N5706
- 2N5705
- 2N5704
- 2N5703
- 2N5702
- 2N5701
- 2N5700
- 2N570
- 2N5699
- 2N5698
- 2N5697
- 2N5696
- 2N5695
- 2N5694
- 2N5693
- 2N5692
- 2N5691
- 2N5690
- 2N569
- 2N5689
- 2N5688
- 2N5687
- 2N5686G
- 2N5686
- 2N5685
- 2N5684G
- 2N5684
- 2N5683
- 2N5682
- 2N5681
- 2N5680
- 2N5679
- 2N5676
- 2N5675
- 2N5672
- 2N5671
- 2N5670
- 2N5669
- 2N5668
- 2N5667S
- 2N5667
- 2N5666S
2N57数据表相关新闻
2N5192G原包原标原装现货
2N5192G原包原标原装现货
2023-5-112N60G-TO220FT-A-TG_UTC代理商
2N60G-TO220FT-A-TG_UTC代理商
2023-3-72N5401L-SOT89R-B-TG_UTC代理商
2N5401L-SOT89R-B-TG_UTC代理商
2023-2-102N60L-TO220F1T-TG_UTC代理商
2N60L-TO220F1T-TG_UTC代理商
2023-2-32N6043G
原装代理
2022-7-232N5245
2N5245,当天发货0755-82732291全新原装现货或门市自取.
2020-8-5
DdatasheetPDF页码索引
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