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2N5401晶体管资料

2N5401别名：2N5401三极管、2N5401晶体管、2N5401晶体三极管
2N5401生产厂家：美国摩托罗拉半导体公司_美国国民半导体公司_美国得
2N5401制作材料：Si-PNP
2N5401性质：通用型（Uni）
2N5401封装形式：直插封装
2N5401极限工作电压：160V
2N5401最大电流允许值：0.6A
2N5401最大工作频率：>100MHZ
2N5401引脚数：3
2N5401最大耗散功率：0.625W
2N5401放大倍数：
2N5401图片代号：A-31
2N5401vtest：160
2N5401htest：100000100
2N5401atest：.6
2N5401wtest：.625

2N5401代换 2N5401用什么型号代替：BF491,BF492,BF493,2SA1221,2SA1222,2SA1319,3CA3F,

2N5401价格

参考价格：￥0.2902

型号：2N5401 品牌：MULTICOMP 备注：这里有2N5401多少钱，2024年最近7天走势，今日出价，今日竞价，2N5401批发/采购报价，2N5401行情走势销售排行榜，2N5401报价。

型号	功能描述	生产厂家&企业
2N5401	PNPhigh-voltagetransistor DESCRIPTION PNPhigh-voltagetransistorinaTO-92;SOT54plasticpackage.NPNcomplement:2N5551. FEATURES •Lowcurrent(max.300mA) •Highvoltage(max.150V). APPLICATIONS •Generalpurposeswitchingandamplification •Telephonyapplications.	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦
2N5401	PNPEPITAXIALSILICONTRANSISTOR AMPLIFIERTRANSISTOR ●Collector-EmitterVoltage:VCEO=150V ●CollectorDissipation:Pc(max)=625mW	SamsungSamsung Group 三星三星半导体
2N5401	PNPSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications??? PNPSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications	SEMTECH Semtech Corporation
2N5401	PNPGeneralPurposeAmplifier PNPGeneralPurposeAmplifier Thisdeviceisdesignedasageneralpurposeamplifierandswitchforapplicationsrequiringhighvoltages.SourcedfromProcess74.	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
2N5401	EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,HIGHVOLTAGE) GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •HighCollectorBreakdwonVoltage :VCBO=-160V,VCEO=-150V •LowLeakageCurrent. :ICBO=-50nA(Max.)@VCB=-120V •LowSaturationVoltage :VCE(sat)=-0.5V(Max.)@IC=-50mA,IB=-5mA •LowNoise:NF=8dB(Max.)	KECKEC CORPORATION KEC株式会社
2N5401	COMPLEMENTARYSILICONGENERALPURPOSEHIGHVOLTAGETRANSISTORS 2N5400,2N5401-->PNP 2N5550,2N5551-->NPN	MICRO-ELECTRONICS Micro Electronics
2N5401	PNPSiliconTransistor(GeneralpurposeamplifierHighvoltageapplication) Description •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage:VCBO=-160V,VCEO=-150V •Lowcollectorsaturationvoltage:VCE(sat)=-0.5V(MAX.) •Complementarypairwith2N5551	AUK AUK
2N5401	AmplifierTransistors AmplifierTransistors PNPSilicon Features •Pb−FreePackagesareAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司
2N5401	SmallSignalTransistorsTO-92Case(Continued) DESCRIPTION: TheCENTRALSEMICONDUCTOR2N4400and2N4401aresiliconNPNtransistorsdesignedforgeneralpurposeamplifierandswitchingapplications.PNPcomplementarytypesare2N4402and2N4403. MARKING:FULLPARTNUMBER	CentralCentral Semiconductor Corp 美国中央半导体
2N5401	PNPTransistors PNPTransistors	WEITRONWEITRON 威堂電子科技
2N5401	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401	AmplifierTransistor(PNPSilicon) PNPSilicon	MotorolaMotorola, Inc 摩托罗拉
2N5401	Plastic-EncapsulatedTransistors TO-92Plastic-EncapsulatedTransistors FEATURE Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-160V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃	TEL TRANSYS Electronics Limited
2N5401	GeneralPurposeSi-EpitaxialPlanarTransistors •Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack	DiotecDIOTEC 德欧泰克
2N5401	PNPTransistorPlastic-EncapsulateTransistors PNPTransistorPlastic-EncapsulateTransistors FEATURES PowerDissipation PCM:0.625W(Tamb=25) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-160V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃	SECOS SeCoS Halbleitertechnologie GmbH
2N5401	PNPSiliconAmplifierTransistor625mW Features •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation)	MCCMicro Commercial Components 美微科美微科半导体公司
2N5401	TO-92Plastic-EncapsulateTransistors TO-92Plastic-EncapsulateTransistors FEATURE Switchingandamplificationinhighvoltage Applicationssuchastelephony Lowcurrent(max.600mA) Highvoltage(max.160v)	DAYADaya Electric Group Co., Ltd. Daya Electric Group Co., Ltd.
2N5401	TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR Description Designedforgeneralpurposeamplifierapplications.	DCCOMDc Components 直流元件直流元件有限公司
2N5401	PNPEPITAXIALPLANARTRANSISTOR Description The2N5401isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. Features •ComplementstoNPNType2N5551. •HighCollector-EmitterBreakdownVoltage.VCEO=150V(@IC=1mA)	TGS Tiger Electronic Co.,Ltd
2N5401	AMPLIFIERTRANSISTORPNPSILICON PNPSilicon	bocaBoca semiconductor corporation 博卡博卡半导体公司
2N5401	AmplifierTransistorsPNPSilicon AmplifierTransistors PNPSilicon Features •Pb−FreePackagesareAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司
2N5401	TO-92Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●SwitchingandAmplificationinHighVoltage ●ApplicationssuchasTelephony ●LowCurrent ●HighVoltage	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd
2N5401	AMPLIFIERTRANSISTOR PNPSilicon	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
2N5401	SERIES2NTRANSISTORS SERIES2NTRANSISTORS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
2N5401	Generalpurposeamplifier Description •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage: VCBO=-160V,VCEO=-160V •Lowcollectorsaturationvoltage: VCE(sat)=-0.5V(MAX.) •Complementarypairwith2N5551	KODENSHIKodenshi Group 可天士可天士光电子集团
2N5401	Plastic-EncapsulateTransistors FEATURES forgeneralpurpose,highvolt AscomplementarytypestheNPNtransistors2N5551are recommended. Lowcurrent(max.600mA),Highvoltage(max.160V)	HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司
2N5401	PNPSiliconEpitaxialPlanarTransistors PNPSiliconEpitaxialPlanarTransistors forgeneralpurpose,highvoltageamplifierapplications. AscomplementarytypestheNPNtransistors2N5550and2N5551arerecommended. Onspecialrequest,thesetransistorscanbemanufacturedindifferentpinconfigurations.	SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司
2N5401	PNPhigh-voltagetransistor DESCRIPTION •PNPhigh-voltagetransistor •Lowcurrent(max.300mA) •Highvoltage(max.160V) •Complementsto2N5551. APPLICATIONS •DesignedforSwitchingandamplification inhighvoltageapplications,suchastelephony applications.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2N5401	PNPEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR PNPEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR HighVoltagePNPTransistorForGeneralPurposeAndTelephonyApplications.	CDIL CDIL
2N5401	TRANSISTOR(PNP) FEATURE Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-160V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃	WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司
2N5401	SiliconPNPtransistorinaTO-92PlasticPackage Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features Highvoltages,complementarypairwith2N5551. Applications Generalpurposehighvoltageamplifier.	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司
2N5401	TRANSISTOR(PNP) FEATURE ●Switchingandamplificationinhighvoltage ●Applicationssuchastelephony ●Lowcurrent(max.600mA) ●Highvoltage(max.160v)	KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD.
2N5401	PNPGeneralPurposeAmplifier ■Features ●Switchingandamplificationinhighvoltage ●Applicationssuchastelephony ●Lowcurrent(max.600mA) ●Highvoltage(max.150V)	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司
2N5401	TRANSISTOR(PNP) FEATURE ●SwitchingandAmplificationinHighVoltage ●ApplicationssuchasTelephony ●LowCurrent(Max.600mA) ●HighVoltage(Max.160v)	FS First Silicon Co., Ltd
2N5401	SwitchingandAmplificationinHighVoltage 文件：444.15 Kbytes Page：4 Pages	RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司
2N5401	封装/外壳：TO-226-3，TO-92-3 长体包装：散装描述：TRANS PNP 150V 0.6A TO92 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMION Semiconductor 安森美半导体安森美半导体公司
2N5401	PNPSiliconAmplifierTransistor625mW 文件：437.58 Kbytes Page：5 Pages	MCCMicro Commercial Components 美微科美微科半导体公司
2N5401	HIGHVOLTAGESWITCHINGTRANSISTOR 文件：235.08 Kbytes Page：4 Pages	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401	TO-92PACKAGE 文件：30.7 Kbytes Page：1 Pages	KECKEC CORPORATION KEC株式会社
2N5401	PNPPlasticEncapsulatedTransistor 文件：343.07 Kbytes Page：2 Pages	SECOS SeCoS Halbleitertechnologie GmbH
2N5401-A-AB3-B	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401-A-AB3-K	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401-A-AB3-R	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401-A-T92-B	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401-A-T92-K	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401-A-T92-R	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401-B-AB3-B	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401-B-AB3-K	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401-B-AB3-R	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401-B-T92-B	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401-B-T92-K	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401-B-T92-R	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401C	EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,HIGHVOLTAGE) GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •HighCollectorBreakdwonVoltage :VCBO=-160V,VCEO=-150V •LowLeakageCurrent. :ICBO=-50nA(Max.)@VCB=-120V •LowSaturationVoltage :VCE(sat)=-0.5V(Max.)@IC=-50mA,IB=-5mA •LowNoise:NF=8dB(Max.)	KECKEC CORPORATION KEC株式会社
2N5401-C-AB3-B	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401-C-AB3-K	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401-C-AB3-R	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401-C-T92-B	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401-C-T92-K	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401-C-T92-R	HIGHVOLTAGESWITCHINGTRANSISTOR HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES Collector-emittervoltage:VCEO=-150V Highcurrentgain	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N5401G	AmplifierTransistor(PNPSilicon) PNPSilicon	MotorolaMotorola, Inc 摩托罗拉

2N5401产品属性

类型
描述
型号
2N5401
功能描述
两极晶体管 - BJT Bipolar Trans PNP,0.6A,150V
RoHS
否
制造商
STMicroelectronics
晶体管极性
PNP 集电极—基极电压
VCBO
集电极—发射极最大电压
VCEO
- 40 V 发射极 - 基极电压
VEBO
- 6 V
增益带宽产品fT
直流集电极/Base Gain hfe
Min
100 A
安装风格
SMD/SMT
封装/箱体
PowerFLAT 2 x 2

2N5401供应商更多...

更新时间：2024-4-28 22:58:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	2N5401	CHANGJIANG	2016+	TO92	9000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市天芯威科技有限公司	2N5401S	TECHPUBLIC/台舟	23+	SOT-23	15800	新到现货,只有原装	询价
深圳市品优时代科技有限公司	2N5401RL1G	ONsemi	2019	TO-92	19700	INFINEON品牌专业原装优质	询价
齐创科技(上海,北京,青岛)有限公司	2N5401	长电	23+	TO-92	30000	原装正品,假一罚十	询价
深圳市明嘉莱科技有限公司	2N5401S-RTK/P	KEC	24+	SOT-23	154341	明嘉莱只做原装正品现货	询价
深圳市豪迈兴电子有限公司	2N5401	-	2339+		8858	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市卓越微芯电子有限公司	2N5401	NS	2020+	TO-92	718	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市高捷芯城科技有限公司	2N5401YTA	onsemi(安森美)	23+	TO-92-3	2317	原厂订货渠道,支持BOM配单一站式服务	询价
深圳市莱克讯科技有限公司	2N5401	FSC	2017+	DIP	54789	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市柯尔基电子有限公司	2N5401RLRAG	ON	23+/24+	TO-92	29922	主营ON原装正品.终端BOM表可配单	询价