2N2907A晶体管资料

  • 2N2907A别名:2N2907A三极管、2N2907A晶体管、2N2907A晶体三极管

  • 2N2907A生产厂家:法国巴黎珊斯公司_德国电子元件股份公司_美国得克萨

  • 2N2907A制作材料:Si-PNP

  • 2N2907A性质:通用型 (Uni)

  • 2N2907A封装形式:直插封装

  • 2N2907A极限工作电压:60V

  • 2N2907A最大电流允许值:0.6A

  • 2N2907A最大工作频率:<1MHZ或未知

  • 2N2907A引脚数:3

  • 2N2907A最大耗散功率:0.4W

  • 2N2907A放大倍数:β>100

  • 2N2907A图片代号:C-40

  • 2N2907Avtest:60

  • 2N2907Ahtest:999900

  • 2N2907Aatest:.6

  • 2N2907Awtest:.4

  • 2N2907A代换 2N2907A用什么型号代替:BC528,BC638,BSW24,BSV47,BSV48,2N3485A,2N4026,2N4027,2N4028,2N4029,3DK9D,

2N2907A价格

参考价格:¥3.3163

型号:2N2907A 品牌:MULTICOMP 备注:这里有2N2907A多少钱,2024年最近7天走势,今日出价,今日竞价,2N2907A批发/采购报价,2N2907A行情走势销售排行榜,2N2907A报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N2907A

PNPswitchingtransistors

DESCRIPTION PNPswitchingtransistorinaTO-18metalpackage. NPNcomplements:2N2222and2N2222A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.60V). APPLICATIONS •Switchingandlinearamplification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
2N2907A

ChipType2C2907AGeometry0600PolarityPNP

Chiptype2C2907AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications. Features:Radiationgraphsavailable

Semicoa

SEMICOA

Semicoa
2N2907A

Type2N2907AGeometry0600PolarityPNP

Chiptype2C2907AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications. Features:Radiationgraphsavailable

Semicoa

SEMICOA

Semicoa
2N2907A

PNPSILICONPLANARSWITCHINGTRANSISTORS

SwitchingAndLinearApplicationDCtoVHFAmplifierApplications

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca
2N2907A

PNPSILICONPLANAREPITAXIALTRANSISTORS

PNPSILICONPLANAREPITAXIALTRANSISTORS THE2N2907,2N2907A,PN2907,PN2907AAREPNPSILICONPLANAREPITAXIALTRANSISTORSFORGENERALPURPOSEAMPLIFIERSANDMEDIUMSPEEDSWITCHINGAPPLICATIONS.

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS
2N2907A

PNPBIPOLARTRANSISTOR

RADIATIONHARDENEDPNPSILICONSWITCHINGTRANSISTOR QualifiedperMIL-PRF-19500/291

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
2N2907A

SILICONPNPTRANSISTOR

DESCRIPTION The2N2907AisDesignedforGeneralPurposeAmplifierandSwitchingApplications.

ASI

Advanced Semiconductor, Inc

ASI
2N2907A

PNPSMALLSIGNALSILICONTRANSISTOR

RADIATIONHARDENEDPNPSILICONSWITCHINGTRANSISTOR QualifiedperMIL-PRF-19500/291

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
2N2907A

SmallSignalTransistors

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N3011isasiliconepitaxialplanarNPNtransistordesignedforultrahighspeedsaturatedswitchingapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central
2N2907A

SmallSignalGeneralPurposeTransistor(PNP)

SmallSignalGeneralPurposeTransistor(PNP) Features •SwitchingandLinearApplication DCtoVHFAmplifierApplication •RoHSCompliant

TAITRON

TAITRON

TAITRON
2N2907A

PNPSiliconGeneralPurposeTransistor

Features •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable2N2222A •IdealforMediumPowerAmplificationandSwitching

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2N2907A

SILICONPLANAREPITAXIALTRANSISTORS

SILICONPLANAREPITAXIALTRANSISTORS The2N2907and2N2907aAarePNPtransistorsmountedinTO-18metalpackagewiththecollectorconnectedtothecase. Theyareprimarilyintendedforhighspeedswitching. NPNcomplementsare2N2222and2N2222A. CompliancetoRoHS

COMSET

Comset Semiconductor

COMSET
2N2907A

SILICONPLANAREPITAXIALTRANSISTORS

SILICONPLANAREPITAXIALTRANSISTORS The2N2907and2N2907aAarePNPtransistorsmountedinTO-18metalpackagewiththecollectorconnectedtothecase. Theyareprimarilyintendedforhighspeedswitching. NPNcomplementsare2N2222and2N2222A. CompliancetoRoHS

COMSET

Comset Semiconductor

COMSET
2N2907A

PNPSwitchingTransistors

Features •Highcurrent(max.600mA) •Lowvoltage(max.60V) •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation)

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2N2907A

SwitchingTransistor

SwitchingTransistor PNPSiliconEpitaxial Features •MIL−PRF−19500/291Qualified •AvailableasJAN,JANTX,andJANTXV •HermeticallySealedCommercialProductwithOptionforMilitaryTemperatureRangeScreening

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N2907A

PNPEPITAXIALPLANARTRANSISTOR

Description The2N2907Aisdesignedforgeneralpurposeamplifierandhighspeed,medium-powerswitchingapplications. Features •LowCollectorSaturationvoltage. •HighSpeedSwitching. •ForComplementaryUsewithNPNTypeMPS2222A.

TGS

Tiger Electronic Co.,Ltd

TGS
2N2907A

SMALLSIGNALPNPTRANSISTORS

DESCRIPTION The2N2905Aand2N2907AaresiliconPlanarEpitaxialPNPtransistorsinJedecTO-39(for2N2905A)andinJedecTO-18(for2N2907A)metalcase.Theyaredesignedforhighspeedsaturatedswitchingandgeneralpurposeapplications.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
2N2907A

GENERALPURPOSEAMPLIFIERSTRANSISTORS

GENERALPURPOSEAMPLIFIERSTRANSISTORS The2N2907and2N2907AarePNPtransistorsmountedinTO-18metalpackagewiththecollectorconnectedtothecase. Theyareprimarilyintendedforhighspeedswitching. NPNcomplementsare2N2222and2N2222A. CompliancetoRoHS

COMSET

Comset Semiconductor

COMSET
2N2907A

SurfaceMountDualPNPTransistor

Description: The2N5796U(TX,TXV)arehermeticallysealed,ceramicsurfacemountdevices,consistingoftwoindividualsiliconPNPtransistors.Thesixpinceramicpackageisidealfordesignswhereboardspaceanddeviceweightareimportantdesignconsiderations. Features: ●Ceramic6pinsu

TTELECTT Electronics.

梯梯电子集成制造服务(苏州)有限公司

TTELEC
2N2907A

PNPSiliconEpitaxialPlanarTransistor

PNPSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. ThetransistorissubdividedintoonegroupaccordingtoitsDCcurrentgain.AscomplementarytypetheNPNtransistorST2N2222andST2N2222Aarerecommended. Onspecialrequest,thesetransistorscanbemanu

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC
2N2907A

60V0.6APNPSiliconAmplifierTransistor

60V0.6APNPSiliconAmplifierTransistor

FCI

Amphenol ICC

FCI
2N2907A

PNPSILICONPLANARSWITCHINGTRANSISTORS

SwitchingAndLinearApplicationDCtoVHFAmplifierApplications

CDIL

CDIL

CDIL
2N2907A

SiliconPNPtransistorinaTO-92PlasticPackage

Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features LowLeakagecurrent,Lowcollectorsaturationvoltage. Applications Generalamplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2N2907A

SILICONPLANAREPITAXIALPNPTRANSISTOR

FEATURES •SILICONPLANAREPITAXIALPNPTRANSISTOR •HIGHSPEEDSATURATEDSWITCHING •ALSOAVAILABLEINCERAMICSURFACEMOUNTPACKAGE •CECCSCREENINGOPTIONS •SPACEQUALITYLEVELSOPTIONS

TTELECTT Electronics.

梯梯电子集成制造服务(苏州)有限公司

TTELEC
2N2907A

T0-92Plastic-EncapsulateTransistors

FEATURES ®ComplementaryNPNTypeavailable(MPS2222A)

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2N2907A

封装/外壳:TO-206AA,TO-18-3 金属罐 包装:剪切带(CT)带盒(TB) 描述:TRANS PNP 60V 0.6A TO18 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
2N2907A

封装/外壳:TO-206AA,TO-18-3 金属罐 包装:管件 描述:TRANS PNP 40V 0.6A TO18 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N2907A

GeneralPurposePNPTransistors

文件:157.15 Kbytes Page:2 Pages

DiotecDIOTEC

德欧泰克

Diotec
2N2907A

PNPSILICONTRANSISTOR

文件:531.8 Kbytes Page:2 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central
2N2907A

SiliconPNPTransistor

文件:212.44 Kbytes Page:2 Pages

Semicoa

SEMICOA

Semicoa
2N2907A

RADIATIONHARDENED

文件:105.73 Kbytes Page:6 Pages

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
2N2907A

PNPSwitchingTransistors

文件:459.29 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2N2907A

PNPSILICONTRANSISTOR

文件:531.8 Kbytes Page:2 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central
2N2907A

MediumCurrentGeneralPurposeAmplifiersandSwitches

文件:777.48 Kbytes Page:12 Pages

RAYTHEONRaytheon Company.

雷神

RAYTHEON
2N2907A

SILICONPLANAREPITAXIALPNPTRANSISTOR

文件:239.37 Kbytes Page:3 Pages

SEME-LAB

Seme LAB

SEME-LAB
2N2907A

HIGHSPEEDMEDIUMPOWERPNPSWITCHINGTRANSISTOR

文件:15.38 Kbytes Page:2 Pages

SEME-LAB

Seme LAB

SEME-LAB

PNPswitchingtransistors

DESCRIPTION PNPswitchingtransistorinaTO-18metalpackage. NPNcomplements:2N2222and2N2222A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.60V). APPLICATIONS •Switchingandlinearamplification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

1.8WPNPGENERALPURPOSESAMLLSIGNALTRANSISTORS

1.8WPNPGENERALPURPOSESAMLLSIGNALTRANSISTORS ThesetransistoraresiliconplanarpitaxialpnpdevicesconformingtoJEDECTO-18,BSSO-132AandIECC7/B11outlines. Theyaredesignedforhighspeedsaturatedswitchingandgeneralpurposeapplication.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

ChipType2C2907AGeometry0600PolarityPNP

Chiptype2C2907AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications. Features:Radiationgraphsavailable

Semicoa

SEMICOA

Semicoa

PNPSILICONPLANAREPITAXIALTRANSISTORS

PNPSILICONPLANAREPITAXIALTRANSISTORS THE2N2907,2N2907A,PN2907,PN2907AAREPNPSILICONPLANAREPITAXIALTRANSISTORSFORGENERALPURPOSEAMPLIFIERSANDMEDIUMSPEEDSWITCHINGAPPLICATIONS.

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS

PNPSILICONPLANARTRANSISTORS

文件:41.15 Kbytes Page:2 Pages

SIEMENS

Siemens Ltd

SIEMENS

PNPSwitchingTransistors

Features •Highcurrent(max.600mA) •Lowvoltage(max.60V) •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation)

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

SWITCHINGTRANSISTORPNPSILICON

FEATURES: ■ELECTRICALPERFORMANCEI.A.W.MIL-PRF-19500/291 ■AVAILABLEINWAFERORCHIPFORMFORHYBRIDAPPLICATIONS ■GENERALPURPOSE-HIGHSPEEDSWITCHINGAPPLICATIONS ■LOWVCE(sat):.4V@IC=150mAdc

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

Hi-Rel60V-0.6APNPtransistor

Description The2N2907AHRisasiliconplanarPNPtransistorspecificallydesignedandhousedinhermeticpackagesforaerospaceandHi-Relapplications.ItisavailableintheJANqualificationsystem(MIL-PRF19500compliance)andintheESCCqualificationsystem(ESCC5000compliance).Incase

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Rad-hard60V,0.6APNPtransistor

Features •Hermeticpackages •ESCCqualified •100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

PNPSMALLSIGNALSILICONTRANSISTOR

RADIATIONHARDENEDPNPSILICONSWITCHINGTRANSISTOR QualifiedperMIL-PRF-19500/291

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

SURFACEMOUNTQUADPNPTRANSISTOR

DESCRIPTION The2N2907AQ–LCC20isa20pad,hermeticallysealed,CeramicSurfaceMountTransistorarray,consistingoffour2N2907AsiliconPNPtransistordie. FEATURES •FOURINDEPENDENTTRANSISTORSINA0.35INCHSQUARECERAMICPACKAGE •SURFACEMOUNTABLE •HERMETICALLYSEALEDPACKAGE •SC

SEME-LAB

Seme LAB

SEME-LAB

SURFACEMOUNTQUADPNPTRANSISTOR

DESCRIPTION The2N2907AQ–LCC20isa20pad,hermeticallysealed,CeramicSurfaceMountTransistorarray,consistingoffour2N2907AsiliconPNPtransistordie. FEATURES •FOURINDEPENDENTTRANSISTORSINA0.35INCHSQUARECERAMICPACKAGE •SURFACEMOUNTABLE •HERMETICALLYSEALEDPACKAGE •SC

SEME-LAB

Seme LAB

SEME-LAB

Rad-hard60V,0.6APNPtransistor

Features •Hermeticpackages •ESCCqualified •100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Rad-hard60V,0.6APNPtransistor

Features •Hermeticpackages •ESCCqualified •100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Rad-hard60V,0.6APNPtransistor

Features •Hermeticpackages •ESCCqualified •100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

GeneralPurposeTransistor

GeneralPurposeTransistor PNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT-23packagewhichisdesignedforlowpowersurfacemountapplications. Features •WedeclarethatthematerialofproductcompliancewithRoHSrequiremen

FS

First Silicon Co., Ltd

FS

GeneralPurposeTransistor

GeneralPurposeTransistor PNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSC-323/SC−70packagewhichisdesignedforlowpowersurfacemountapplications. Features •WedeclarethatthematerialofproductcompliancewithRoHSrequ

FS

First Silicon Co., Ltd

FS

SurfaceMountNPNGeneralPurposeTransistor

Description: The2N2907AUA(TX,TXV)isahermeticallysealedceramicsurfacemountgeneralpurposeswitchingtransistor.Theminiaturefourpinceramicpackageisidealfordesignswhereboardspaceanddeviceweightareimportantdesignconsiderations.The“UA”suffixdenotesthe4terminallea

TTELECTT Electronics.

梯梯电子集成制造服务(苏州)有限公司

TTELEC

PNPSMALLSIGNALSILICONTRANSISTOR

RADIATIONHARDENEDPNPSILICONSWITCHINGTRANSISTOR QualifiedperMIL-PRF-19500/291

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

ChipType2C2907AGeometry0600PolarityPNP

Chiptype2C2907AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications. Features:Radiationgraphsavailable

Semicoa

SEMICOA

Semicoa

Type2N2907AUBGeometry0600PolarityPNP

Chiptype2C2907AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications. Features:Radiationgraphsavailable

Semicoa

SEMICOA

Semicoa

SurfaceMountPNPGeneralPurposeTransistor

Description: The2N2907AUB,2N2907AUBTXand2N2907AUBTXVareminiature,hermeticallysealed,ceramicsurfacemountgeneralpurposeswitchingtransistors.TheminiaturethreepinceramicpackageisidealforupgradingcommercialgradecircuitstomilitaryreliabilitylevelswhereplasticSOT‐23de

TTELECTT Electronics.

梯梯电子集成制造服务(苏州)有限公司

TTELEC

PNPSMALLSIGNALSILICONTRANSISTOR

RADIATIONHARDENEDPNPSILICONSWITCHINGTRANSISTOR QualifiedperMIL-PRF-19500/291

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

SiliconPNPTransistor

Description SemicoaSemiconductorsoffers: •ScreeningandprocessingperMIL-PRF-19500AppendixE •JANlevel(2N2907AUBJ) •JANTXlevel(2N2907AUBJX) •JANTXVlevel(2N2907AUBJV) •JANSlevel(2N2907AUBJS) •QCItotheapplicablelevel •100dievisualinspectionperMIL-STD-750method2

Semicoa

SEMICOA

Semicoa

2N2907A产品属性

  • 类型

    描述

  • 型号

    2N2907A

  • 功能描述

    两极晶体管 - BJT PNP Gen Pur SS

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-4-26 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
TO-18
20000
全新原装假一赔十
MOTOROLA/摩托罗拉
2020+
NA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
MSCI
三年内
1983
纳立只做原装正品13590203865
MICROCHIP(美国微芯)
23+
TO-18
924
原厂订货渠道,支持BOM配单一站式服务
TT Electronics/Optek Technolog
23+
4-CLCC
30000
晶体管-分立半导体产品-原装正品
ST Microelectronics
22+
SMD
518000
明嘉莱只做原装正品现货
蓝箭
23+
NA/
6000
优势代理渠道,原装正品,可全系列订货开增值税票
Central
21+
N/A
10000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Microsemi
1942+
N/A
944
加我qq或微信,了解更多详细信息,体验一站式购物
ST
22+
N/A
5000
挂了就有,工厂库存,YX价优

2N2907A芯片相关品牌

  • ABLIC
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  • MOLEX9
  • MSYSTEM
  • SSDI
  • WTE

2N2907A数据表相关新闻