位置:首页 > IC中文资料第6187页 > 26NM60
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
N-channel600V,0.160廓,19APowerFLAT??8x8HVultralowgatechargeMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=21A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=175mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Lowinputcapacitanceandgatecharge Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 |
26NM60产品属性
- 类型
描述
- 型号
26NM60
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-channel 600 V, 0.160 ??, 19 A PowerFLATa?¢ 8x8 HV ultra low gate charge MDmesha?¢ II Power MOSFET
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
1926+ |
TO-220F |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
ST/意法 |
23+ |
NA/ |
70 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
23+ |
TO220 |
12700 |
买原装认准中赛美 |
|||
ST |
23+ |
TO220 |
25630 |
原装正品 |
|||
ST |
21+ |
TO220 |
10000 |
原装,品质保证,请来电咨询 |
|||
ST |
2022+ |
TO220 |
7600 |
原厂原装,假一罚十 |
|||
ST |
21+ |
TO220 |
13880 |
公司只售原装,支持实单 |
|||
ST |
23+ |
TO220 |
30000 |
原装正品公司现货,假一赔十! |
|||
ST |
2023+ |
TO220 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST |
23+ |
TO220 |
10000 |
原装正品,支持实单 |
26NM60规格书下载地址
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DdatasheetPDF页码索引
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