| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.52Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowe | IXYS IXYS Integrated Circuits Division |  | | |
HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)lowQg •Avalancheenergyandcurrentrated •Fastintrinsicrectifier Advantages •E | IXYS IXYS Integrated Circuits Division | | | |
PolarHVHiPerFETPowerMOSFET 文件：139.47 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
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57415 |
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23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
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TOS |
2020+ |
TO-220 |
350000 |
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IXYS |
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5280 |
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24+25+/26+27+ |
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6328 |
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|||
IXYS |
24+ |
TO-247AD(IXFH) |
30000 |
晶体管-分立半导体产品-原装正品 |
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TO-3P |
500 |
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14306 |
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8560 |
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