1S2价格

参考价格:¥4.5985

型号:1S26 品牌:Sargent Tools 备注:这里有1S2多少钱,2024年最近7天走势,今日出价,今日竞价,1S2批发/采购报价,1S2行情走势销售排行榜,1S2报价。
型号 功能描述 生产厂家&企业 LOGO 操作
1S2

1AMPERESCHOTTKYBARRIERRECTIFIERS(VOLTAGE-20to100VoltsCURRENT-1.0Ampere)

SCHOTTKYBARRIERRECTIFIERS VOLTAGE20to100VoltsCURRENT1.0Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •For

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
1S2

TECHNICALSPECIFICTIONSOFSCHOTTKYBARRIERRECTIFIER

TECHNICALSPECIFICTIONSOFSCHOTTKYBARRIERRECTIFIER VOLTAGERANGE-20to100VoltsCURRENT-1.0Ampere

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
1S2

SuperFastRectifiers

Features Lowforwardvoltagedrop Highcurrentcapability Highreliability Highsurgecurrentcapability TJis150oC(Max.)andTSTGis175oC(Max.)withPIglue

Good-Ark

Good-Ark

Good-Ark
1S2

SCHOTTKYBARRIERRECTIFIERS

文件:122.73 Kbytes Page:2 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
1S2

SCHOTTKYBARRIERRECTIFIERS

文件:59.63 Kbytes Page:2 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
1S2

1.0AMP.SchottkyBarrierRectifiers

文件:792.9 Kbytes Page:2 Pages

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

DYELEC
1S2

SuperFastRecoveryRectifier

文件:209.65 Kbytes Page:4 Pages

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE

SCHOTTKYBARRIERRECTIFIERVOLTAGERANGE20to100VoltsCURRENT1.0Ampere

FEATURES *Lowpowerloss,highefficiency *Lowleakage *Lowforwardvoltage *Highcurrentcapability *Highspeedswitching *Highsurgecapabitity *Highreliability

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

RECTRON

SCHOTTKYBARRIERRECTIFIER

FEATURES Metal-Semiconductorjunctionwithguardring Epitaxialconstruction Lowforwardvoltagedrop,lowswitchinglosses Highsurgecapability Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionapplications TheplasticmaterialcarriesU/Lrecognition94

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANG

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to200VoltsForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

JINGHENG

SchottkyBarrierRectifier

Features ●Guardringforovervoltageprotection ●Verysmallconductionlosses ●Extremelyfastswitching ●Highforwardsurgecapability ●Highfrequencyoperation ●Solderdip275°Cmax.7s,perJESD22-B106 TypicalApplications Foruseinlowvoltagehighfrequencyinverters,free

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE

SCHOTTKYBARRIERRECTIFIER

SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to100VoltsForwardCurrent-1.0Ampere FEATURES TheplasticpackagecarriesUnderwritersLaboratoryFlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwar

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰达半导体深圳辰达半导体有限公司

CHENDA

SCHOTTKYBARRIERRECTIFIER

FEATURES PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highcurrentcapability,Lowforwardvoltagedrop Highsurgecapability Foruseinlowvoltage,highfrequencyinverters

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANG

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to200VoltsForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

JINANJINGHENG

SCHOTTKYBARRIERRECTIFIERDIODES

PRV:20-60Volts IO:1.0Ampere FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowforwardvoltagedrop *Lowleakge *Pb/RoHSFree

EIC

EIC

EIC

VOLTAGE20V~60V1.0AMPSchottkyBarrierRectifiers

FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

1.0AMPSCHOTTKYBARRIERRECTIFIERS

FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

UNIOHMUniohm

台湾厚声

UNIOHM

1.0AmpSchottkyBarrierRectifier

Features ·PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ·Lowpowerloss,highefficiency ·Highcurrentcapability,Lowforwardvoltagedrop ·Highsurgecapability ·Metalsiliconjunction,majoritycarrierconduction

CHENYIShanghai Lunsure Electronic Tech

商朗电子上海商朗电子科技有限公司

CHENYI

SCHOTTKYBARRIERRECTIFIER

SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to100VoltsForwardCurrent-1.0Ampere FEATURES TheplasticpackagecarriesUnderwritersLaboratoryFlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highfo

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY

SCHOTTKYBARRIERRECTIFIER

FEATURES ●TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 ●Metalsiliconjunction,majoritycarrierconduction ●Lowpowerloss,highefficiency ●Highforwardsurgecurrentcapability ●Hightemperaturesolderingguaranteed:250oC/10seco

DIOTECH

Diotech Company.

DIOTECH

VOLTAGERANGE20to60VoltsCURRENT1.0Ampere

FEATURES *Lowpowerloss,highefficiency *Lowleakage *Lowforwardvoltage *Highcurrentcapability *Highspeedswitching *Highsurgecapabitity *Highreliability

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

WILLAS

CURRENT1.0AmpereVOLTAGE20to40Volts

Features ·PlasticPackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ·Metalsiliconjunction,majoritycarrierconduction ·Lowpowerloss,highefficiency ·Highcurrentcapability,Lowforwardvoltagedrop ·Highsurgecapability ·Foruseinlowvolt

DAESAN

Daesan Electronics Corp.

DAESAN

1.0AMP.SCHOTTKYBARRIERRECTIFIERS

Features ●Guardringforovervoltageprotection ●Verysmallconductionlosses ●Extremelyfastswitching ●Highforwardsurgecapability ●Highfrequencyoperation ●Solderdip275°Cmax.7s,perJESD22-B106 TypicalApplications Foruseinlowvoltagehighfrequencyinverters,free

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:20---100V CURRENT:1.0A FEATURES ◇Lowswitcingnoise ◇Lowforwardvoltagedrop ◇Highcurrentcapability ◇Highswitchingcapability ◇Highsurgecapability ◇Highreliability

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to100Volts CURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA

1.0AmpSchottkyBarrierRectifier20to100Volts

Features ·PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 ·Lowpowerloss,highefficiency ·Highcurrentcapability,Lowforwardvoltagedrop ·Highsurgecapability ·Metalsiliconjunction,majoritycarrierconduction

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

SCHOTTKYBARRIERRECTIFIER

FEATURES PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highcurrentcapability,Lowforwardvoltagedrop Highsurgecapability Foruseinlowvoltage,highfrequencyinverters

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANG

SCHOTTKYBARRIERRECTIFIERVOLTAGERANGE20to100VoltsCURRENT1.0Ampere

FEATURES *Lowpowerloss,highefficiency *Lowleakage *Lowforwardvoltage *Highcurrentcapability *Highspeedswitching *Highsurgecapabitity *Highreliability

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

RECTRON

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to200VoltsForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

JINGHENG

SchottkyBarrierRectifier

Features ●Guardringforovervoltageprotection ●Verysmallconductionlosses ●Extremelyfastswitching ●Highforwardsurgecapability ●Highfrequencyoperation ●Solderdip275°Cmax.7s,perJESD22-B106 TypicalApplications Foruseinlowvoltagehighfrequencyinverters,free

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to200VoltsForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

JINANJINGHENG

SCHOTTKYBARRIERRECTIFIER

FEATURES PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highcurrentcapability,Lowforwardvoltagedrop Highsurgecapability Foruseinlowvoltage,highfrequencyinverters

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANG

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching Features •Lowcapacitance.(C=3.0pFmax) •Shortreverserecoverytime.(trr=4.0nsmax) •Highreliabilitywithglassseal.

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching Features •Lowcapacitance.(C=3.0pFmax) •Shortreverserecoverytime.(trr=4.0nsmax) •Highreliabilitywithglassseal.

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching Features •Lowcapacitance.(C=3.5pFmax) •Shortreverserecoverytime.(trr=8.0nsmax) •Highreliabilitywithglassseal.

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching Features •Lowcapacitance.(C=3.5pFmax) •Shortreverserecoverytime.(trr=8.0nsmax) •Highreliabilitywithglassseal.

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconEpitaxialPlanarDiodeforVariousDetector,Modulator,Demodulator

Features •Lowcapacitance.(C=3.0pFmax) •Shortreverserecoverytime.(trr=8.0nsmax) •Highreliabilitywithglassseal.

HitachiHitachi, Ltd.

日立公司

Hitachi

Highreliabilitywithglassseal.

Features •Lowcapacitance.(C=3.0pFmax) •Shortreverserecoverytime.(trr=8.0nsmax) •Highreliabilitywithglassseal.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

HIGHSPEEDSWITCHINGDIODE

PRV:70Volts Io:150mA FEATURES: *SiliconEpitaxialPlanarDiode *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Highspeedswitching *Pb/RoHSFree MECHANICALDATA: *Case:DO-35GlassCase *Lead:AxialleadsolderableperMIL

SYNSEMI

SynSemi,Inc.

SYNSEMI

HIGHSPEEDSWITCHINGDIODE

PRV:70Volts Io:150mA FEATURES: *SiliconEpitaxialPlanarDiode *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Highspeedswitching *Pb/RoHSFree

EIC

EIC

EIC

SMALLSIGNALSWITCHINGDIODE

REVERSEVOLTAGE:60V CURRENT:0.15A FEATURES Siliconepitaxialplanardiode Highspeedswitchingdiode 500mWpowerdissipation Weight:0.004ounces,0.13grams MECHANICALDATA Case:DO-35,glasscase Polarity:Colorbanddenotescathode

KISEMICONDUCTORKwang Myoung I.S. CO.,LTD

明阳国际贸易广州市明阳国际贸易有限公司

KISEMICONDUCTOR

SILICONEPTAXIALPLANARTYPE

SiliconEptaxialPlanarTypeDiode GENERALPURPOSEDETECTORANDRECTIFIERAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SILICONPLANARTYPETRIGGERDIODE

SiliconPlanarTypeTriggerDiode THYRISTOR,TRIACTRIGGERAPPLICATIONS.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

VARIABLECAPACITANCEDIODE

SiliconEpitaxialPlanarType VARIABLECAPACITANCEDIODE UHF,VHFAFCAPPLICATIONS.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SILICONEPITAXIALPLANARTYPEDIODE

ULTRAHIGHSPEEDSWITCHINGAPPLICATIONS. COREDRIVEAPPLICATIONS.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

VARACTORDIODE

DESCRIPTIONThe152207(8B)iahyper-abruptunctiontypsvoltage: varisblecapacitancediode. Itisdesignedforlectronictuningcicuitapplicationsin VHEandUHFbandsandfeatureshighO,highcapaci- tanceratioandhighreliability. FEATURES -HighQ. -Highcapacitanceratio. -L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SILICONVARACTORDIODES

DESCRIPTIONThe152208(8)and152200(B)areahyper-abruptjunction typevoltage-variablecapacitancediodes. ‘The152208(8)and15220(8)aredesignedforelectronic tuningcircuitapplicationinUHFandVHF. FEATURES -Lowseriesresistance.0,352TYP. -Highcapacitanceratio, -Lowle

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SILICONEPITAXIALPLANARTYPEVARIABLECAPACITANCEDIODE

AFCAPPLICATIONFORFMRECEIVER. FEATURES: •HighQ:Q=70(Min.)(f=50MHz) •LowReverseCurrent:IR=100nA(Max.)(VR=4V)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

GENERALPURPOSERECTIFIERAPPLICATIONS.

GENERALPURPOSERECTIFIERAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

GENERALPURPOSERECTIFIERAPPLICATIONS.

GENERALPURPOSERECTIFIERAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

GENERALPURPOSERECTIFIERAPPLICATIONS.

GENERALPURPOSERECTIFIERAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

TUNERAFCDIODE

TUNERAFCDIODE

SEMTECH

Semtech Corporation

SEMTECH

TUNERAFCDIODE

TUNERAFCDIODE The1S2638isavariablecapacitordiodeintendedforAFCapplications,VHFTVapplications,FMreceivers.Aircraftcommunicationsgear,andotherreceiversinthe1MHzto500MHz. StandardpackageisDO-35case,DO-34caseisavailableuponrequest.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

VARIABLECAPACITANCEDIODESILICONTYPE

Features •Excellentlinearity •Lowseriesresistance:rs≤0.8Ω •package:SOD-323 Application •FrequencymodulationinFMRadio •FMandAFCincommunicationset

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

SILICONSWITCHINGDIODES

HIGHSPEEDSWITCHING SILICONEPITAXIALDOUBLEDIODES:COMMONANODE MINIMOLD

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SILICONSWITCHINGDIODES

HIGHSPEEDSWITCHING SILICONEPITAXIALDOUBLEDIODES:COMMONCATHODE MINIMOLD

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SILICONSWITCHINGDIODES

HIGHSPEEDSWITCHING SILICONEPITAXIALDOUBLEDIODES:COMMONCATHODE MINIMOLD

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

GlassPassivatedSuperFastRectifiers

Features Lowforwardvoltagedrop Highcurrentcapability Highreliability Highsurgecurrentcapability

Good-Ark

Good-Ark

Good-Ark

SCHOTTKYBARRIERRECTIFIERS

FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotec

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

SILICONEPITAXIALPLANARDIODE

文件:309.16 Kbytes Page:2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

SUNMATE

1S2产品属性

  • 类型

    描述

  • 型号

    1S2

  • 制造商

    MAGNUM/COOPER

  • 制造商

    Magnum/Cooper

更新时间:2024-5-20 18:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
21+
DO-15
9800
只做原装正品假一赔十!正规渠道订货!
RENESAS
1436+
DO-35
30000
绝对原装进口现货可开增值税发票
NEC
24+
SOT23-3
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
NEC
20+
SOT23-3
49000
原装优势主营型号-可开原型号增税票
原厂
2023+
模块
600
专营模块,继电器,公司原装现货
AMD
22+
BGA
12245
现货,原厂原装假一罚十!
NEC
18+
SOT-23
16930
全新原装现货,可出样品,可开增值税发票
NEC
22+
SOT23
600000
航宇科工半导体-央企优秀战略合作伙伴!
NEC
23+
SOT-23
8293
日立
21+
SOD323
50000
原厂订货价格优势,可开13%的增值税票

1S2芯片相关品牌

  • Altera
  • BILIN
  • Cree
  • ETC
  • HY
  • LUMILEDS
  • MOLEX2
  • OHMITE
  • RCD
  • spansion
  • TOKEN
  • VBSEMI

1S2数据表相关新闻