型号 功能描述 生产厂家&企业 LOGO 操作
1N5524

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD
1N5524

LOWVOLTAGEAVALANCHEZENERDIODESHIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE

LOWVOLTAGEAVALANCHEZENERDIODES HIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE 1.PackageStyleDO-7 2.SuffixdenotesVztolerance:nonsuffix±20,Asuffix±10:Ir@Vr1,Vz,+Vfonly.SuffixB±5:Ir@Vr2,Vz,DVz,Vf,ND. 3.Measuredwith10,60HzACsuperimposedonIzt. 4.Measuredfrom

KNOXKnox Semiconductor, Inc

Knox Semiconductor, Inc

KNOX
1N5524

LOWVOLTAGEAVALANCHEDIODESDO-35

FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5524

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5524

LowVoltageAvalanche500mWZenerDiodesDO-35

FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5524

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N5524

封装/外壳:DO-204AH,DO-35,轴向 包装:散装 描述:VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

Microchip

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES

LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES LOWVOLTAGEAVALANCHEZENERDIODES 400MILLIWATTS 3.3THRU33VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LOWREVERSELEAKAGECHARACTERISTICS

•1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •LOWREVERSELEAKAGECHARACTERISTICS •LOWNOISECHARACTERISTICS •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

CDI-DIODE

LOWREVERSELEAKAGECHARACTERISTICS

•1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •LOWREVERSELEAKAGECHARACTERISTICS •LOWNOISECHARACTERISTICS •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

CDI-DIODE

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LowVoltageSurfaceMount500mWAvalancheDiodes

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LowVoltageSurfaceMount500mWAvalancheDiodes

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LowVoltageSurfaceMount500mWAvalancheDiodes

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LowVoltageSurfaceMount500mWAvalancheDiodes

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

封装/外壳:DO-204AH,DO-35,轴向 包装:卷带(TR) 描述:VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

Microchip

LOWREVERSELEAKAGECHARACTERISTICS

文件:114.68 Kbytes Page:2 Pages

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

ZENERDIODE,500mW

文件:111.15 Kbytes Page:2 Pages

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

1N5524产品属性

  • 类型

    描述

  • 型号

    1N5524

  • 制造商

    JGD

  • 制造商全称

    Jinan Gude Electronic Device

  • 功能描述

    0.4W LOW VOLTAGE AVALANCHE DIODES

更新时间:2024-5-21 15:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
22+
SOP
21000
原厂原包装。假一罚十。可开13%增值税发票。
MICROCHIP
23+
7300
专注配单,只做原装进口现货
Microsemi
0815
3
优势货源原装正品
APD
22+
DO-35
5000
APD
22+
9912
只做原装进口现货
ADP
11+
管子
146
原装库存有订单来谈优势
APD
22+
9912
郑重承诺只做原装进口现货
ADP
NA
12000
原装现货,长期供应,终端账期支持
ADP
2023+
NA
6893
十五年行业诚信经营,专注全新正品
DO
2021+
Microsemi
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详

1N5524芯片相关品牌

  • AAC
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  • OSRAM
  • RECOM
  • SIEMENS
  • WILLOW

1N5524数据表相关新闻