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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1N5226B-G | AxialLeadedGlassZenerDiode Voltage:2.4to75Volts Power:0.5Watts RoHSDevice Features -PlanarDieConstruction -500mWPowerDissipation -IdeallySuitedforAutomatedAssemblyProcesses | COMCHIPComchip Technology 典琦典琦科技股份有限公司 |  |   |
1N5226B-G | 封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：DIODE ZENER 3.3V 500MW DO35 分立半导体产品 二极管 - 齐纳 - 单 | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | | |
SILICONPLANARZENERDIODES?
| Surge SURGE COMPONENTS |  | | |
ZENERVOLTAGEREGULATORDIODEINHERMETICCERAMICSURFACEMOUNTPACKAGEFORHIGHRELIABILITYAPPLICATIONS FEATURES •MilitaryScreeningOptionsavailable | SEME-LAB Seme LAB |  | | |
SILICONPLANARZENERDIODES
| SEMTECH Semtech Corporation |  | | |
0.5WSILICONPLANARZENERDIODES FEATURES •Standardszenervoltagetoleranceis20.AddsuffixAfor10toleranceandsuffixBfor5toleranceothertolerance,non-standardsandhigherzenervoltageuponrequest. | CHENYIShanghai Lunsure Electronic Tech 商朗电子上海商朗电子科技有限公司 |  | | |
SILICONPLANARZENERDIODES Features SiliconPlanarZenerDiodesStandardZenervoltagetoleranceis±20. AddsuffixAfor10toleranceandsuffixBfor±5tolerance. Othertolerances,nonstandardandhigherZenervoltagesuponrequest. | Good-Ark Good-Ark |  | |
1N5226B-G产品属性
- 类型
描述
- 型号
1N5226B-G
- 功能描述
稳压二极管 VR=3.3V
- RoHS
否
- 制造商
Vishay Semiconductors
- 齐纳电压
12 V
- 电压容差
5 %
- 电压温度系数
0.075 %/K
- 功率耗散
3 W
- 最大反向漏泄电流
3 uA
- 最大齐纳阻抗
7 Ohms
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
DO-214AC
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
FAIRCHILD/仙童 |
20+ |
DO-35 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
MOTOROLA/摩托罗拉 |
2048+ |
DO |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
Diodes Zetex |
23+/22+ |
1980 |
原装进口订货7-10个工作日 |
||||
FAIRCHI |
21+ |
DO-35 |
5000 |
原装现货假一赔十 |
|||
MOT |
N/A |
535 |
|||||
SINBLE |
23+ |
12W3.3V |
880000 |
明嘉莱只做原装正品现货 |
|||
VISHAY |
2023+ |
DO-35 |
50000 |
原装现货 |
|||
Diodes |
07+/08+ |
DO-35 |
7500 |
||||
VISHAY |
21+ |
DO35 |
2000 |
1N5226B-G芯片相关品牌
1N5226B-G规格书下载地址
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DdatasheetPDF页码索引
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