N-channel800V,0.37,12AZener-protectedSuperMESH5PowerMOSFETinD짼PAK,TO-220FPandTO-220packages

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

N-channel800V,0.37Ωtyp.,12AMDmesh™K5PowerMOSFETsinD²PAK,TO-220FP,TO-220andTO-247

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

N-channel800V,0.37,12AZener-protectedSuperMESH5PowerMOSFETinD짼PAK,TO-220FPandTO-220packages

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

N-channel800V,0.37Ωtyp.,12AMDmesh™K5PowerMOSFETsinD²PAK,TO-220FP,TO-220andTO-247

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

N-channel800V,0.37??typ.,12AMDmesh??K5PowerMOSFETinanI짼PAKFPpackage

Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhighefficie