Zener Diodes

Features • Silicon Power Zener Diodes. • For use in stabilizing and clipping circuits with high power rating. • The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances are available upon request.

SILICON POWER ZENER DIODE

Features 2 Watt Power Dissipation Zener Voltages from 11V - 200V Graded per International E24 Standard

Silicon-Power-Z-Diodes (non-planar technology)

Maximum power dissipation 2 W Nominal Z-voltage ñ Nominale Z-Spannung 1 200 V Plastic case DO-41 Weight approx. ñ Gewicht ca. 0.4 g Plastic material has UL classification 94V-0 S

SILICON ZENER DIODES

VZ : 3.6 - 200 Volts PD : 2 Watts FEATURES : * Silicon power zener diode * High reliability * Low leakage current * Pb / RoHS Free

ZENER DIODES

FEATURES ♦ Silicon Power Zener Diodes ♦ For use in stabilizing and clipping circuits with high power rating ♦ The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances are available upon request.

ZENER DIODES

FEATURES ♦ Silicon Power Zener Diodes ♦ For use in stabilizing and clipping circuits with high power rating ♦ The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances are available upon request.

SILICON ZENER DIODES

SILICON ZENER DIODES

SILICON POWER ZENER DIODE

FEATURES • 2 Watt Power Dissipation • Zener Voltages from 11V - 200V • Graded per International E24 Standard

2W 120V TAIWAN SUNMATE SEMICONDUCTOR CO.,LIMITED

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AXIAL LEADED SILICON ZENER DIODES

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2 Watts Axial Leaded Zener Diodes

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Silicon-Power-Zener Diodes (non-planar technology)

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Silicon-Power-Zener Diodes (non-planar technology)

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Silicon-Power-Zener Diodes

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Zener Diodes

Low leakage current

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定压输入隔离非稳压单输出系列

致远电子定压隔离DC-DC电源可为用户系统提供稳定、可靠的驱动电压，并有效解决静电、浪涌所导致的供电不稳问题，是板内数据采集、通讯等子系统供电的理想方案。与传统的设计相比，致远电子定压系列隔离电源模块从拓扑结构、芯片方案到元器件均采用优质方案，具备更高的集成度与可靠性， 能够为用户I/O及通信隔离等应用提供标准、可靠的解决方案。 • 隔离电压：1000VDC、3000VDC、6000VDC\n• 功率范围0.5~3W，近1000个产品型号\n• SIP、DIP等兼容国内、国际产品的封装\n• 纹波噪声低、线性和负载调整率高\n• 体积小、效率高、耐冲击、隔离特性好\n• 符合RoHS的生产工艺\n• 采用阻燃封装材料、外壳、符合UL94 V-0\n• 完善的老化测试、EMC测试;

定压输入隔离非稳压正负双路/单路输出系列

致远电子定压隔离DC-DC电源可为用户系统提供稳定、可靠的驱动电压，并有效解决静电、浪涌所导致的供电不稳问题，是板内数据采集、通讯等子系统供电的理想方案。与传统的设计相比，致远电子定压系列隔离电源模块从拓扑结构、芯片方案到元器件均采用优质方案，具备更高的集成度与可靠性， 能够为用户I/O及通信隔离等应用提供标准、可靠的解决方案。 • 隔离电压：1000VDC、3000VDC、6000VDC\n• SIP、DIP等兼容国内、国际产品的封装\n• 体积小、效率高、耐冲击、隔离特性好\n• 采用阻燃封装材料、外壳、符合UL94 V-0\n• 完善的老化测试、EMC测试;

Silicon Power Z-Diodes (non-planar technology)

Maximum power dissipation 2 W Nominal Z-voltage 10 200 V Plastic case DO-41 Weight approx. 0.4 g Plastic material has UL classification 94V-0 Standard packaging taped in ammo pack

2 W Glass Passivated Zener Diode

[FAGOR] Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C. 3. Max. soldering time, 3.5 sec. 4. Do not bend lead at a point closer than 2 mm. to the body.

Glass Passivated Zener Diode

Glass Passivated Zener Diode 5.8V-188V 2W FEATURES • Glass passivated junction • The plastic material carries U/L recognition 94 V-0 • Terminals: Axial Leads • Polarity: Color band denotes cathode

封装/外壳：36-SMD 模块 包装：管件 描述：DC DC CONVERTER 0.5-5.5V 电源 - 板安装 直流转换器

Silicon Power Z-Diodes (non-planar technology)

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ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD

DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. APPLICATIONS Circuit for Constant Voltage, Constant Current, W

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12