20V PNP LOW SATURATION TRANSISTOR AND

Features and Benefits PNP Transistor • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 64mΩ for a low equivalent On-Resistance • hFE characterized up to -6A for high current gain hold up Schottky Diode • BVR > 40

PNP + Schottky

• PNP Transistor • VCEO = -20V • RSAT = 64m? • IC = -3.5A • Schottky Diode • VR = 40V • VF= 500mv (@1A) • IC = 1A • IC = -3.5A Continuous Collector Current • Low Saturation Voltage (-220mV @ -1A) • hFE characterized up to -6A • Low VF, fast switching Schottky • Lead, Halogen, and Antimony Free/RoHS ;

20V PNP LOW SATURATION TRANSISTOR AND

Features and Benefits PNP Transistor • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 64mΩ for a low equivalent On-Resistance • hFE characterized up to -6A for high current gain hold up Schottky Diode • BVR > 40

封装/外壳：8-WDFN 裸露焊盘 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 20V 3.5A DFN3020B-8 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Very fast high-voltage soft-recovery rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATU

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 6A Peak Pulse Current * Excellent HFE Characteristics up to 6Amps * Extremely Low Saturation Voltage E.g. 16mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 96mΩ at 2.5A

丝印代码：718；SILICON POWER (SWITCHING) TRANSISTORS

FEATURES * 625mW POWER DISSIPATION * IC CONT 2.5A * IC Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed) * Extremely Low Saturation Voltage E.g. 10mV Typ. * Exhibits extremely low equivalent on-resistance; RCE(sat)

Silicon epitaxial planar type

Silicon epitaxial planar type For switching For wave detection ■ Features • Three isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a type in the same direction) • Low forward voltage VF , optimum for low vo

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * 6A Peak pulse current * Excellent hFE characteristics up to 6A (pulsed) * low saturation voltage * IC Cont 2.5A APPLICATIONS * Power MOSFET gate driver in conjunction with complementary ZTX618