50V NPN LOW SATURATION TRANSISTOR

Features • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage (100mV Max @1A) • RSAT = 68mΩ for a Low Equivalent On-Resistance • hFE Specified up to 6A for High Current Gain Hold Up • Low Profile 0.6mm High Package for Thin Applications • RJA Efficient, 60 Lower th

50V NPN LOW SATURATION TRANSISTOR

Features • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage (100mV Max @1A) • RSAT = 68mΩ for a Low Equivalent On-Resistance • hFE Specified up to 6A for High Current Gain Hold Up • Low Profile 0.6mm High Package for Thin Applications • RJA Efficient, 60 Lower th

50V NPN LOW SATURATION TRANSISTOR

文件：432.55 Kbytes Page：7 Pages

封装/外壳：3-UDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 4A DFN2020B-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

CMOS -5 V/ 5V 4 OHM SINGLE SPDT SWITCHES

GENERAL DESCRIPTION The ADG619/ADG620 are monolithic, CMOS single-pole double-throw (SPDT) switches. Each switch conducts equally well in both directions when the device is on. FEATURES 6.5 Ω (maximum) on resistance 0.8 Ω (maximum) on-resistance flatness 2.7 V to 5.5 V single

CMOS -5 V/ 5V 4 OHM SINGLE SPDT SWITCHES

GENERAL DESCRIPTION The ADG619/ADG620 are monolithic, CMOS single-pole double-throw (SPDT) switches. Each switch conducts equally well in both directions when the device is on. FEATURES 6.5 Ω (maximum) on resistance 0.8 Ω (maximum) on-resistance flatness 2.7 V to 5.5 V single

SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR

文件：1.65281 Mbytes Page：3 Pages

Single & Dual Output, 6W Ultra-Wide Input Range DC/DC Converters

文件：193.6 Kbytes Page：2 Pages

CMOS, 짹5 V/5 V, 4 廓, Single SPDT Switches

文件：365.37 Kbytes Page：16 Pages