丝印代码：N40；SOT23 40 volt NPN silicon planar medium power transistor

Description This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. Features ■ Low saturation voltage for reduced power dissipation ■ 1 to 2 amp high current capability ■ Pb-free ■ SOT23

SOT23 40 volt NPN silicon planar medium power

Description This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. Features ■ Low saturation voltage for reduced power dissipation ■ 1 to 2 amp high current capability ■ Pb-free ■ SOT23

NPN, 40V, 1A, SOT23

This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching.

SOT23 40 volt NPN silicon planar medium power transistor

Description This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. Features ■ Low saturation voltage for reduced power dissipation ■ 1 to 2 amp high current capability ■ Pb-free ■ SOT23

SOT23 40 volt NPN silicon planar medium power

Description This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. Features ■ Low saturation voltage for reduced power dissipation ■ 1 to 2 amp high current capability ■ Pb-free ■ SOT23

SOT23 40 volt NPN silicon planar medium power

Description This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. Features ■ Low saturation voltage for reduced power dissipation ■ 1 to 2 amp high current capability ■ Pb-free ■ SOT23

SOT23 40 volt NPN silicon planar medium power transistor

Description This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. Features ■ Low saturation voltage for reduced power dissipation ■ 1 to 2 amp high current capability ■ Pb-free ■ SOT23

40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 40V 1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

8-bit Futurebus transceiver

DESCRIPTION The FB2040A is an 8-bit bidirectional BTL transceiver and is intended to provide the electrical interface to a high performance wired-OR bus. The FB2040A is an inverting transceiver. FEATURES • 8-bit BTL transceivers • Separate I/O on TTL A-port • Inverting • Drives heavily loade

3.3V BTL8-bit TTL to BTL transceiver

DESCRIPTION The FBL2040 is an 8-bit bidirectional BTL transceiver and is intended to provide the electrical interface to a high performance wired-OR bus. The FBL2040 is an inverting transceiver. FEATURES • 3.3V version of FB2040A with 70 power savings • 8-bit BTL transceivers • Separate I/O o

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR2045CT series is supplied in the SOT78 co

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara