60V, SOT23, PNP medium power transistor

Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • Higher power diss

NPN, 60V, 5A, SOT23

Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

60V, SOT23, NPN medium power transistor

文件：513.65 Kbytes Page：6 Pages

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Features BVCEO > 60V Maximum Continuous Collector Current IC = 5A VCE(SAT)

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

•BVCEO > 60V\n•Maximum Continuous Collector Current IC = 5A\n•VCE(SAT) < 45mV @ 1A\n•RCE(SAT) = 25mΩ\n•High Power Dissipation SOT23 (Type DN) Package\n•High Peak Current\n•Low Saturation Voltage\n•140V Forward Blocking Voltage;

丝印代码：851；60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Features BVCEO > 60V Maximum Continuous Collector Current IC = 5A VCE(SAT)

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 60V 5A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

60V, SOT23, NPN medium power transistor

文件：513.65 Kbytes Page：6 Pages

Correlated Double Sampling IC

■ Overview The AN2018S is used to reduce noise in CCD image sensor output signal. It performs correlated double sampling on image signal sent from a CCD sensor to output clearer image signal. ■ Features • Operating on low voltage (VCC=4.8V), consuming little current (ICC=12.7mA typ.)

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

Integrated Circuit 8-Channel Darlington Array/Driver

Description: Ideally suited for interfacing between low–level digital logic circuitry and high–power peripheral loads, the NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in an 18–Lead DIP type package and feature peak load current ratings to 600mA (NTE2016, NTE2019) or