100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

Features • BVCEO > 100V • IC = 4.5A high Continuous Current • ICM = 10A Peak Pulse Current • RCE(sat) = 31mΩ for a low equivalent On-Resistance • Low saturation voltage VCE(sat)

100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • 4.5 amps continuous current • Up to 10 amps peak current • Very l

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 4.5A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

2011 Series - Fast Acting GDT Surge Arrestor with FLAT® Technology

Features ■ Bourns® FLAT® GDT technology ■ Improved impulse performance ■ Flexible mounting options ■ Stable breakdown throughout life ■ Volume- and space-saving design ■ UL Recognized ■ RoHS compliant* and halogen free** Applications ■ Telecommunications ■ Industrial Communications ■

Snap Bushings

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Crimp Information Sheet

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Crimp Information Sheet

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INTEGRAL ELECTRONICS (IEPE) PIEZOELECTRIC ACCELEROMETER

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