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ZXTN19价格
参考价格：￥1.5838
型号：ZXTN19020CFFTA 品牌：Diodes 备注：这里有ZXTN19多少钱，2025年最近7天走势，今日出价，今日竞价，ZXTN19批发/采购报价，ZXTN19行情走势销售排行榜，ZXTN19报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ZXTN19 | 60V NPN low sat medium power transistor Description Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Higher power dissipation SOT223 package • High peak current • Low sat | Zetex |   | |
20V, SOT23F, NPN high gain power transistor Description Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Features | Zetex | | ||
20V, SOT23F, NPN high gain power transistor Description Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Features | DIODES 美台半导体 | | ||
20V, SOT23F, NPN high gain power transistor Description Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Features | Zetex | | ||
20V, SOT23F, NPN high gain power transistor Description Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Features | DIODES 美台半导体 | | ||
20V NPN high gain transistor Description Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Higher power dissipation SOT223 package • High gain • High peak curr | Zetex | | ||
20V, SOT23F, NPN high gain power transistor Description Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Features | Zetex | | ||
20V, SOT23F, NPN high gain power transistor Description Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Features | DIODES 美台半导体 | | ||
20V, SOT23F, NPN high gain power transistor Description Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Features | Zetex | | ||
20V, SOT23F, NPN high gain power transistor Description Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Features | DIODES 美台半导体 | | ||
20V NPN high gain transistor Description Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Higher power dissipation SOT223 package • High gain • High peak curr | Zetex | | ||
20V NPN high gain transistor in SOT223 Features • BVCEX > 70V • BVCEO > 20V • BVECO > 4.5V • IC = 9A High Continuous Current • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
20V NPN high gain transistor in SOT223 Features • BVCEX > 70V • BVCEO > 20V • BVECO > 4.5V • IC = 9A High Continuous Current • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
20V NPN high gain transistor Description Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Higher power dissipation SOT223 package • High gain • High peak curr | Zetex | | ||
20V NPN high gain transistor Description Packaged in the SOT89 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • 7.5A continuous current • Up to 20A peak current • Very low saturation | Zetex | | ||
20V NPN high gain transistor in SOT89 Features • BVCEO > 20V • IC = 7.5A Continuous Current • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
20V NPN HIGH GAIN TRANSISTOR IN SOT89 Features BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC = 7.5A High Continuous Current VCE(SAT) | DIODES 美台半导体 | | ||
20V NPN HIGH GAIN TRANSISTOR IN SOT89 Features BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC = 7.5A High Continuous Current VCE(SAT) | DIODES 美台半导体 | | ||
20V NPN high gain transistor Description Packaged in the SOT89 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • 7.5A continuous current • Up to 20A peak current • Very low saturation | Zetex | | ||
20V NPN high gain transistor in SOT89 Features • BVCEO > 20V • IC = 7.5A Continuous Current • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
55V, NPN medium power transistor Description Packaged in the SOT89 outline this low saturation 55V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Feature • Extremely low equivalent on-resistance of 28mΩ • 6 Amps continuous curre | Zetex | | ||
55V, SOT89, NPN medium power transistor Features • BVCEO > 55V • IC = 6.0A High Continuous Current • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
55V, NPN medium power transistor Description Packaged in the SOT89 outline this low saturation 55V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Feature • Extremely low equivalent on-resistance of 28mΩ • 6 Amps continuous curre | Zetex | | ||
55V, SOT89, NPN medium power transistor Features • BVCEO > 55V • IC = 6.0A High Continuous Current • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
60V, SOT23F, NPN high gain power transistor Description This mid voltage NPN transistor has been designed for applications requiring high gain and low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of | Zetex | | ||
60V NPN HIGH GAIN POWER TRANSISTOR Description Advanced process capability has been used to maximise the performance of this transistor. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance Featu | DIODES 美台半导体 | | ||
60V, SOT23F, NPN high gain power transistor Description This mid voltage NPN transistor has been designed for applications requiring high gain and low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of | Zetex | | ||
60V NPN HIGH GAIN POWER TRANSISTOR Description Advanced process capability has been used to maximise the performance of this transistor. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance Featu | DIODES 美台半导体 | | ||
60V NPN low sat medium power transistor Description Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Higher power dissipation SOT223 package • High peak current • Low sat | Zetex | | ||
60V NPN low sat medium power transistor in SOT223 Features • BVCEO > 60V • IC = 7A Continuous Collector Current • ICM = 12A Peak Pulse Current • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
60V NPN low sat medium power transistor Description Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Higher power dissipation SOT223 package • High peak current • Low sat | Zetex | | ||
60V NPN low sat medium power transistor in SOT223 Features • BVCEO > 60V • IC = 7A Continuous Collector Current • ICM = 12A Peak Pulse Current • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
100V, SOT23F, NPN high gain power transistor Description Advanced process capability has been used to maximise the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance Features | Zetex | | ||
100V, SOT23F, NPN high gain power transistor Description Advanced process capability has been used to maximise the performance of this transistor. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Feat | DIODES 美台半导体 | | ||
100V, SOT23F, NPN high gain power transistor Description Advanced process capability has been used to maximise the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance Features | Zetex | | ||
100V, SOT23F, NPN high gain power transistor Description Advanced process capability has been used to maximise the performance of this transistor. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Feat | DIODES 美台半导体 | | ||
100V NPN low sat medium power transistor in SOT223 Features • BVCEO > 100V • IC = 5.5A Continuous Collector Current • ICM = 10A Peak Pulse Current • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
100V NPN low sat medium power transistor in SOT223 Features • BVCEO > 100V • IC = 5.5A Continuous Collector Current • ICM = 10A Peak Pulse Current • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
100V NPN medium power transistor in SOT89 Features • BVCEO > 100V • IC = 5.25A High Continuous Current • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
100V NPN medium power transistor in SOT89 Features • BVCEO > 100V • IC = 5.25A High Continuous Current • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
20V NPN HIGH GAIN POWER TRANSISTOR 文件：340.03 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
20V NPN HIGH GAIN POWER TRANSISTOR 文件：340.03 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
20V NPN HIGH GAIN POWER TRANSISTOR 文件：340.03 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
20V NPN high gain transistor | DIODES 美台半导体 | | ||
NPN, 20V, 6.5A, SOT23F | DIODES 美台半导体 | | ||
20V NPN HIGH GAIN POWER TRANSISTOR 文件：427.45 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
20V NPN HIGH GAIN POWER TRANSISTOR 文件：427.45 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
20V NPN HIGH GAIN POWER TRANSISTOR 文件：427.45 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
封装/外壳：SOT-23-3 扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 6.5A SOT23F 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | DIODES 美台半导体 | | ||
NPN, 20V, 9A, SOT223 | DIODES 美台半导体 | | ||
20V NPN HIGH GAIN TRANSISTOR IN SOT223 文件：907.03 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 9A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | DIODES 美台半导体 | | ||
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR 文件：487.42 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR 文件：487.42 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR 文件：341.84 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR 文件：341.84 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR 文件：503.98 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR 文件：503.98 Kbytes Page：7 Pages | DIODES 美台半导体 | |
ZXTN19产品属性
- 类型
描述
- 型号
ZXTN19
- 制造商
ZETEX
- 制造商全称
ZETEX
- 功能描述
60V NPN low sat medium power transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
|||
Diodes(美台) |
2021/2022+ |
标准封装 |
12000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
DIODES/美台 |
24+ |
原封装 |
52000 |
只做原装进口现货 |
|||
DIODES(美台) |
24+ |
SOT-23F |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
DIODES/美台 |
24+ |
原封装 |
29823 |
郑重承诺只做原装进口现货 |
|||
DIODES/美台 |
24+ |
NA/ |
36250 |
原装现货,当天可交货,原型号开票 |
|||
DIODES |
2016+ |
SOT23 |
12000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES/美台 |
23+ |
SOT-89 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
DIODES/美台 |
25+ |
SOT223 |
41943 |
DIODES/美台全新特价ZXTN19060CGTA即刻询购立享优惠#长期有货 |
|||
DIODES/美台 |
2450+ |
SOT23F |
9850 |
只做原厂原装正品现货或订货假一赔十! |
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瀚佳科技(深圳)有限公司 专业工厂一站式全套配单服务
2019-1-13
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