DUAL 20V NPN LOW SATURATION SWITCHING TRANSISTOR

Features and Benefits • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (150mV @ 1A) • RSAT = 47mΩ for a Low Equivalent On-Resistance • hFE specified up to 6A for high current gain hold up • Dual NPN saving footprint and component count • Low profile 0.8mm high

Dual NPN, 20V, 4.5A, DFN3020-8

DUAL 20V NPN LOW SATURATION SWITCHING TRANSISTOR

Features and Benefits • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (150mV @ 1A) • RSAT = 47mΩ for a Low Equivalent On-Resistance • hFE specified up to 6A for high current gain hold up • Dual NPN saving footprint and component count • Low profile 0.8mm high

DUAL 20V NPN LOW SATURATION SWITCHING TRANSISTOR

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Recording and playing amplifier IC for answering telephones

■ Features • Incorporates recording and playing amplifiers. • Incorporates a loudspeaker amplifier. • Incorporates a VOX circuit. • Incorporates a magnetic-head circuit to provide for one-tape cassette recording. • Incorporates 4 control circuits.

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. FEATURES • Low current (max. 500 mA) • Low voltage (max. 55 V) • High DC current gain. APPLICATIONS • General purpose low frequency • Relay drivers.

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available*

Darlington Transistors

Darlington Transistors NPN Silicon

Varactor Silicon Tuning Diode for AM Radio

Description; The NTE618 is a silicon varactor diode with a good linearity and high capacitance ratio that is capable of beinf operated from a low voltage. This device is intended for use in AM receiver electronic tuning applications. Features: ● High Capacitance Ratio: CR = 15.5 (Min) ● Guaran