DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=20V; RSAT = 40mΩ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applic

DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=20V; RSAT = 40mΩ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applic

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

200V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

Fast Switching

文件：67.86 Kbytes Page：2 Pages

N-Channel 200 V (D-S) MOSFET

文件：1.00995 Mbytes Page：7 Pages