型号 功能描述 生产厂家 企业 LOGO 操作
ZXT10N20DE6TC

20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res

DIODES

美台半导体

ZXT10N20DE6TC

20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=20V; RSAT = 55m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switchin

Zetex

ZXT10N20DE6TC

封装/外壳:SOT-23-6 包装:卷带(TR) 描述:TRANS NPN 20V 3.5A SOT23-6 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

DIODES

美台半导体

20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res

DIODES

美台半导体

20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=20V; RSAT = 55m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switchin

Zetex

20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=20V; RSAT = 55m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switchin

Zetex

20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res

DIODES

美台半导体

NPN LOW SATURATION SWITCHING TRANSISTOR

文件:365.63 Kbytes Page:7 Pages

DIODES

美台半导体

ZXT10N20DE6TC产品属性

  • 类型

    描述

  • 型号

    ZXT10N20DE6TC

  • 功能描述

    两极晶体管 - BJT 20V NPN SuperSOT4

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-11-19 20:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
20+
SMD
88800
DIODES原装优势主营型号-可开原型号增税票
-
24+
NA/
6530
原装现货,当天可交货,原型号开票
ZETEX
22+
SOT23-6
30000
只做原装正品
DIODES/美台
23+
SOT-26
12700
买原装认准中赛美
DIODES(美台)
24+
SOT26
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
DIODES/美台
24+
SOT-26
25000
原装正品公司现货,假一赔十!
ZETEX
24+
SOT-23-6
5810
只做原装正品
DIODES/美台
22+
SMD
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
DIODES/ZETEX
23+
原厂封装
13528
振宏微原装正品,假一罚百
DIODES
24+
SMD
63200
一级代理/放心采购

ZXT10N20DE6TC数据表相关新闻