100V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK

SUMMARY V(BR)DSS=100V : RDS(on)=0.085 ; ID=7.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management app

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET features low on-resistance, fast switching and a high avalanche withstand capability, making it ideal for high efficiency power management applications. • DC-DC Converters • Power management functions • Disconnect switches • Motor control

N-CHANNEL ENHANCEMENT MODE MOSFET

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET features low on-resistance, fast switching and a high avalanche withstand capability, making it ideal for high efficiency power management applications. • DC-DC Converters • Power management functions • Disconnect switches • Motor control

100V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK

SUMMARY V(BR)DSS=100V : RDS(on)=0.085 ; ID=7.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management app

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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N-Channel 100 V (D-S) MOSFET

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2.6 GHz SMALL MICROWAVE RELAYS

FEATURES • Excellent high frequency characteristics (to 2.6GHz) • Surface-mount type also available • Compact and slim size Size: 20.2(L) × 11.2(W) × 8.9(H)* mm .795(L) × .441(W) × .350(H) inch *The height of Surface-mount type is 9.6 mm .378 inch size. TYPICAL APPLICATIONS 1. Broa

2.6 GHz SMALL MICROWAVE RELAYS

FEATURES • Excellent high frequency characteristics (to 2.6GHz) • Surface-mount type also available • Compact and slim size Size: 20.2(L) × 11.2(W) × 8.9(H)* mm .795(L) × .441(W) × .350(H) inch *The height of Surface-mount type is 9.6 mm .378 inch size. TYPICAL APPLICATIONS 1. Broa

Schottky Barrier Diode

FEATURES * Similar to TO-220AB Case * Fully Molded Isolation * Dual Diodes – Cathode Common * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * Tj=150 °C operation

Schottky Barrier Diode

FEATURES * Similar to TO-220AC Case * Fully Molded Isolation * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * Tj=150 °C operation

ULTRA-SMALL PACKAGE FLAT POLARIZED RELAY

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