PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 3A Peak Pulse Current * Excellent HFE Characteristics Up To 3A (pulsed) * Extremely Low Saturation Voltage * Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * Switch functions in LED displays and Satellite receivers * Negativ

Super323
SOT323 PNP SILICON POWER (SWITCHING) TRANSISTOR

Features • BVCEO > -20V • IC = -1A Continuous Collector Current • ICM = -3A Peak Pulse Current • Low Saturation Voltage -250mV Max @ IC = -1A. • RCE(SAT) = 200mΩ @ 1A for a Low Equivalent On-Resistance • 500mW Power Dissipation • Excellent hFE Characteristics up to 3A • Complementary NPN T

Super323
SOT323 PNP SILICON POWER (SWITCHING) TRANSISTOR 3A Peak Pulse Current

Features • BVCEO > -20V • IC = -1A Continuous Collector Current • ICM = -3A Peak Pulse Current • Low Saturation Voltage -250mV Max @ IC = -1A. • RCE(SAT) = 200mΩ @ 1A for a Low Equivalent On-Resistance • 500mW Power Dissipation • Excellent hFE Characteristics up to 3A • Complementary NPN T

PNP, 20V, 1A, SOT323

Super323
SOT323 PNP SILICON POWER (SWITCHING) TRANSISTOR 3A Peak Pulse Current

Features • BVCEO > -20V • IC = -1A Continuous Collector Current • ICM = -3A Peak Pulse Current • Low Saturation Voltage -250mV Max @ IC = -1A. • RCE(SAT) = 200mΩ @ 1A for a Low Equivalent On-Resistance • 500mW Power Dissipation • Excellent hFE Characteristics up to 3A • Complementary NPN T

20V PNP POWER SWITCHING TRANSISTOR IN SOT323

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封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 20V 1A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PNP 20V 1A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Very fast high-voltage soft-recovery rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATU

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 6A Peak Pulse Current * Excellent HFE Characteristics up to 6Amps * Extremely Low Saturation Voltage E.g. 16mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 96mΩ at 2.5A

丝印代码：718；SILICON POWER (SWITCHING) TRANSISTORS

FEATURES * 625mW POWER DISSIPATION * IC CONT 2.5A * IC Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed) * Extremely Low Saturation Voltage E.g. 10mV Typ. * Exhibits extremely low equivalent on-resistance; RCE(sat)

Silicon epitaxial planar type

Silicon epitaxial planar type For switching For wave detection ■ Features • Three isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a type in the same direction) • Low forward voltage VF , optimum for low vo

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * 6A Peak pulse current * Excellent hFE characteristics up to 6A (pulsed) * low saturation voltage * IC Cont 2.5A APPLICATIONS * Power MOSFET gate driver in conjunction with complementary ZTX618