NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

FEATURES * 100 Volt VCEO * 800 mA continuous current * Gain of 10K at IC=500mA * Ptot=1 Watt

NPN Darlington Transistor

NPN Darlington Transistor • These device is designed for applications requiring extremely high gain at collector currents to 0.5A and high breakdown voltage. • Sourced from process 06.

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

FEATURES * 100 Volt VCEO * 800 mA continuous current * Gain of 10K at IC=500mA * Ptot=1 Watt

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN DARL 100V 0.8A TO226 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：E-Line-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 100V 0.8A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Darlington Transistor

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NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

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