SILICON DUAL VARIABLE CAPACITANCE DIODE

SUMMARY VBR=25V; IR=20nA; Cd=47pF(Nom) DESCRIPTION The ZDC834A is a new hyperabrupt SOT23 packaged dual common cathode varactor diode , offering users both compact circuit design and impressive performance comprising tightly controlled CV characteristics, a capacitance of typically 47 pf @ 2V,e

SILICON DUAL VARIABLE CAPACITANCE DIODE

SILICON DUAL VARIABLE CAPACITANCE DIODE

SUMMARY VBR=25V; IR=20nA; Cd=47pF(Nom) DESCRIPTION The ZDC834A is a new hyperabrupt SOT23 packaged dual common cathode varactor diode , offering users both compact circuit design and impressive performance comprising tightly controlled CV characteristics, a capacitance of typically 47 pf @ 2V,e

SILICON 28V HYPERABRUPT VARACTOR DIODES

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature sur

Silicon 25V hyperabrupt varactor diodes

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surfac

SILICON 28V HYPERABRUPT VARACTOR DIODES

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surfac

SILICON 25V HYPERABRUPT VARACTOR DIODES

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature sur

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：DIODE VAR CAP DUAL 47PF SOT23-3 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

DIODE VAR CAP DUAL 47PF SOT23-3

DIODE VAR CAP DUAL 47PF SOT23-3

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：DIODE VAR CAP DUAL 47PF SOT23-3 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

Integrated Circuit Low Power Low Offset Voltage Comparator

Description: The NTE834 and NTE834SM are precision voltage comparators designed to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the low power supply current drain is independent of the magnitude of the power supply vo

Integrated Circuit Low Power Low Offset Voltage Comparator

Description: The NTE834 and NTE834SM are precision voltage comparators designed to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the low power supply current drain is independent of the magnitude of the power supply vo

MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE LOW OR HIGH WITH INTEGRATED TIMER

DESCRIPTION The TS834 is a voltage supervisor providing two different outputs (one active low and one active high) with an integrated timer that can be disabled. It incorporates a high stability bandgap voltage reference and a comparator with open drain output. The threshold voltage is set at 4

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

DESCRIPTION The µPA834TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.4 dB TYP., Q2 : NF = 1.2 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q1 : |S21e|2 = 12.0 dB TYP. Q2 : |S21e

SUPER BRIGHT T-1 3/4 (5 mm) LED LAMP - Water Clear

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