SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES

SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES

NPN power transistors

DESCRIPTION NPN power transistor in a TO-202; SOT128B plastic package. PNP complements: BD826 and BD830. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • General purpose • Driver stages in hi-fi amplifiers and television circuits.

Integrated Circuit Battery Operated Audio Amp

Description: The NTE825 amplifier is an integrated circuit in a 14–Lead DIP type package optimized for 6V, 7.5V, and 9V operation into low impedance loads. The gain is internally set at 20 to keep the external part count low, but the addition of an external resistor and capacitor between Pin2 and

ALTERNISTORS

DESCRIPTION The TPDV 625 ---> 1225 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer ) ■ HIGH COMMUTATION : > 88 A/ms (400H

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.