丝印代码：Z330；WE-DD SMT Shielded Coupled Inductor

General Properties: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMAHILITY CLASSIFICATION 94V-0

FEATURES • PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMAHILITY CLASSIFICATION 94V-0 • LOW ZENER IMPEDANCE • EXCELLENT CLAMPINGCAPABILITY

SILICON PLANAR ZENER DIODES

Voltage Range: 100 to 330V Current: 0.5A Standard Zener voltage tolerance is ±10. Add Suffix “B” for ±5 tolerance. Other tolerances are available upon request. Mechanical Data • Case: DO-41 molded plastic • Terminals: Plated axial leads, solderable per MIL-STD202E, method 208C •

1WATT ZENER DIODE

FEATURES PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 LOW ZENER IMPEDANCE EXCELLENT CLAMPING CAPABILITY

ZENER SILICON RETIFIER

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High Surge Axial Cemented Leaded Wirewound Resistors

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Commercial Axial Cemented Leaded Wirewound Resistors

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封装/外壳：轴向 包装：卷带（TR）剪切带（CT） 描述：RES 100 OHM 4W 5% AXIAL 电阻器 通孔式电阻器

Zener Diode

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Dual Schottky Barrier Diodes

Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the following features: • Extremel

SCHOTTKY BARRIER RECTIFIERS

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

Germanium PNP Transistor High Power Switch

Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance in motor drive controls and low loss regulators.

3-Terminal Positive Regulator

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