N-Channel Enhancement Mode Field Effect Transistor

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封装/外壳：8-PowerVDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：N-CH MOSFET 30V 30A DFN3333-8L 分立半导体产品 晶体管 - FET，MOSFET - 单个

中低压MOSFET(12V-400V)

30V N-Channel Power

Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances

30V N-Channel Power

General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on

N-Channel 30-V (D-S) MOSFET

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30A竊?0V N-CHANNEL MOSFET

文件：235.42 Kbytes Page：5 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.0152 Mbytes Page：8 Pages